MPO1 Search Results

MPO135-1R0

Contextual Info: SMT Power Inductor MOLDING TYPE MPO135 Type Features Low profile(5.0mm max. hegiht), high current(lsat up to 54A) SMD type. Magnetically shielded, suitable for hight density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing.

MPO135-1R0

Abstract: inductor 2r2 125OC
Contextual Info: SMT Power Inductor MOLDING TYPE MPO13X Type Applications Features RoHS compliant. Low profile, high current SMD type. Frequency range up to 1MHz. Lowest DCR/ H, in this package size. Low buzz noise due to its gap-less structure. Notebook/Desktop/Server/Video Card applications.

Contextual Info: SMT Power Inductor MOLDING TYPE MPO135 Type Features RoHS compliant. Low profile(5.0mm max. hegiht), high current(lsat up to 54A) SMD type. Magnetically shielded, suitable for hight density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing.

MPO104-1R0

Abstract: MPO104-1R5 MPO10X MPO104-R56 MPO105-R36
Contextual Info: SMT Power Inductor MOLDING TYPE MPO10X Type Features Low profile, high current(lsat up to 54A) SMD type. Magnetically shielded, suitable for hight density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter,

MPO104-1R5

Abstract: MPO104-R56 MPO104-R39 MPO104-1R0
Contextual Info: SMT Power Inductor MOLDING TYPE MPO10X Type Applications Features RoHS compliant. Low profile, high current SMD type. Frequency range up to 1MHz. Lowest DCR/ H, in this package size. Low buzz noise due to its gap-less structure. Notebook/Desktop/Server/Video Card applications.

MPO104-1R0IR

Abstract: IR3841 EEV-FK1E331P GRM1885C1H222JA01D MMBT3904-TP
Contextual Info: IRDC3841 SupIRBuck TM USER GUIDE FOR IR3841 EVALUATION BOARD DESCRIPTION The IR3841 is a synchronous buck converter, providing a compact, high performance and flexible solution in a small 5mmx6mm Power QFN package. An output over-current protection function is

circuit diagram for automatic voltage regulator

Abstract: EL series small size SMD transistor AN-1043 ECJ2FB0J226M IR3822MPBF IR3822MTRPBF JESD22-A114
Contextual Info: PD-60333 IR3822MPBF SupIRBuck TM HIGHLY INTEGRATED 4A WIDE-INPUT VOLTAGE, SYNCHRONOUS BUCK REGULATOR Features • • • • • • • • • • • • • • Wide Input Voltage Range 2.5V to 21V Wide Output Voltage Range 0.6V to 12V Continuous 4A Load Capability

XA2 MMIC

Abstract: TOP MARKING C1 ROHM lot No MPO-100136 SIRENZA Sirenza C4 marking
Contextual Info: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

Contextual Info: Preliminary Product Description SDM-08120 The SDM-08120 120W power module is an impedance matched, single stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. It is a drop in, no tune, solution for high power applications requiring high efficiency, excellent linearity, and unit to

1485C

Abstract: SE 194 Sirenza amplifier SOT-89
Contextual Info: Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable

Contextual Info: Product Description SPA-1118 Sirenza Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

gsm signal repeater

Contextual Info: Preliminary Product Description SDM-09060-B1F The SDM-09060-B1F 60W power module is an impedance matched, single stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. It is a drop in, no tune, solution for high

Contextual Info: Product Description SPA-1318 Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial

SMDI

Abstract: SC70-6 100141
Contextual Info: C autlom The Land P a t t e r n s and S o ld e r Mask shown a r e g e n e ric f o r t h i s p acka g e. Re fe n to p n o d u c t d a t a sh ee t for any 2 .0 0 1 ,2 0 0 re q u ire d .0 7 9 - .014 R e f v a ria tio n s s p e c ific to an a p p lic a tio n .

FMCW

Contextual Info: m o c . o c l e v i n . w w 2012/2 w PRODUCT CATALOGUE PRODUCT CATALOGUE 2012/2 SUBSIDIARY AND DISTRIBUTION NETWORK To find a local NIVELCO representation, please check distribution page on NIVELCO website! CONTACT NIVELCO To contact NIVELCO, please use contact page on NIVELCO website!

SXA3318BZ

Abstract: TAJB104KLRH MCH18 SXA-3318B TAJB106K020R AM03M
Contextual Info: SXA-3318B SXA-3318BZ Product Description RoHS Compliant & Green Package Pb 400-2500 MHz Balanced ½ W Medium Power GaAs HBT Amplifier with Active Bias Sirenza Microdevices’ SXA-3318B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost

MAX8774

Abstract: 88E1116 fic motherboard 42HG NF-430-N-A3 Maxim MAX8774 transistor c117 XTB70 NF-SPP-100-N-A2 ss14 dc
Contextual Info: 5 4 3 2 1 First International Computer,Inc D D Portable Computer Group HW Department Board name : MotherBoard Schematic C Project : AMD S1 + Nvidia C51D + MCP51 Version : 0.3 C Initial Date : 05/13/2006 Confidential B B Manager Sign by : Avery Lee Drawing by

samsung 822

Abstract: 37 TV samsung lcd Schematic circuit diagram samsung lcd tv power supply schematic schematic diagram crt tv samsung BD40 SAMSUNG TV 40 LCD SAMSUNG ELECTRONICS BA44 schematic atx 2.03 P4 37 TV samsung lcd Schematic g1003 lyon samsung
Contextual Info: -이 기술 자산으로 승인자만이 사용할사용할 수 있습니다 이 문서는 문서는삼성전자의 삼성전자의 기술 자산으로 승인자만이 수 있습니다 - This can notnot be be used without Samsung's authorization ThisDocument

ptt50

Abstract: HT-191NB5 MCP67MD MCP67 MCP67D orion tv lcd Schematic Power Supply MCP67MV top mark smd A12 5PIN G784 FIC PTT50
Contextual Info: 5 4 3 2 1 First International Computer,Inc D D Portable Computer Group HW Department Board name : MotherBoard Schematic C Project : AMD S1 + MCP67MD + NB8M-SE Version : 0.1 C Initial Date : 10/25/2006 Confidential B B Manager Sign by : Avery Lee Drawing by

NF-SPP-100-N-A2

Abstract: 88E1116 NF-430-N-A3 88E1116 RGMII config SC413TSTRT Maxim MAX8774 APM2307AC-TRL MCP51 HY5PS561621AFP-25 M38827
Contextual Info: 5 4 3 2 1 First International Computer,Inc D D Portable Computer Group HW Department Board name : MotherBoard Schematic C Project : AMD S1 + Nvidia C51D + MCP51 Version : 0.5 C Initial Date : 05/13/2006 Confidential B B Manager Sign by : Avery Lee Drawing by

ene kb3926qf c0

Abstract: ene kb3926qf kb3926 ene kb3926qf d2 kb3926qf d2 kb3926qf c0 IDT92HD RT8206B AT5231 OZ8119
Contextual Info: 1 2 3 4 5 7 8 Jones/Cujo BLOCK DIAGRAM PCB STACK UP 8L Dis. LAYER 2 : SGND 14.318MHz PAGE 4 A 478P uPGA /35W PAGE 3,4 LAYER 3 : IN2 01 CPU THERMAL SENSOR CPU Penryn LAYER 1 : TOP A 6 CLK_CPU_BCLK,CLK_CPU_BCLK# CLOCK GEN CLK_MCH_BCLK,CLK_MCH_BCLK# LAYER 4 : SGND1

ECE1077

Abstract: EMC4001 BCM5755 max8786 ECE5028 BCM5752 MAX8778e MEC5028 MAX8731AETI T LM358ADR2
Contextual Info: 1 2 3 4 5 6 DM6-INTEGRATED A AC/BATT CONNECTOR PG 46 SYSTEM RESET CIRCUIT PG 38 BATT SELECTOR PG 39 BATT CHARGER PG 40 POWER Merom 478 Micro-FCPGA +1.5V_RUN/+1.05V_VCCP PG 3,4 PG 45 +3.3V_ALW/+5V_ALW/+15V_ALW USB2.0 (P0,P1) USB2.0 (P2,P3) USB2.0 (P8) DMI interface

samsung r580

Abstract: BA41-01174A marvell 88E8059 88E8059 SMSC mec1308 TPS51125 mec1308 tps51125 SCHEMATIC smd diode code MK a8 c917
Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL

ASM1442

Abstract: bd82hm55 SMSC mec1308 mec1308 Intel hm55 JLCD500 HM55 CRB smsc mec1308-nu LTST-C193TBKT-AC N11X-GE1
Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL