XA2 MMIC
Abstract: TOP MARKING C1 ROHM lot No MPO-100136 SIRENZA Sirenza C4 marking
Contextual Info: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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Sirenza amplifier SOT-89 Marking
Abstract: .XA2
Contextual Info: Not Recommended for New Designs Product Description SXH-189 Sirenza Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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sxh-189sxa-289016ref118ref+4041refeds-101247sirenza amplifier sot-89 markingxa2
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1485C
Abstract: SE 194 Sirenza amplifier SOT-89
Contextual Info: Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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Xa2 TRANSISTOR
Abstract: XA2 MMIC SXA-289 Sirenza amplifier SOT-89 marking XA2 EDS-100622 RF transistor marking IN SOT-89 sxa289 TOP MARKING C1 ROHM ROHM SOT89 MARKING
Contextual Info: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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Xa2 TRANSISTOR
Abstract: transistor 289 MMIC "SOT 89" marking SXA-289 rf power amplifier 850 MHZ
Contextual Info: Preliminary Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXT-289
Abstract: transistor 289 marking 25 mmic sot-89 MMIC "SOT 89" marking Xa2 marking Xa2 TRANSISTOR xamp 034 XA2 MMIC
Contextual Info: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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sxt-289pate02016ref118ref+9041refeds-101157transistor 289marking 25 mmic sot-89mmic "sot 89" markingxa2 markingxa2 transistorxamp 034xa2 mmic
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marking 25 mmic sot-89
Abstract: RF transistor marking IN SOT-89 MARKING 30 SOT89 DBM
Contextual Info: Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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Xa3 TRANSISTOR
Abstract: 041R 267M3502104 MCH18 SXA-389 MMIC "SOT 89" marking
Contextual Info: Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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MCH18
Abstract: SXA-389B xa3b EL115
Contextual Info: Preliminary Product Description SXA-389B Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular
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xa3b
Contextual Info: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent
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XA2 MMIC
Abstract: MPO-100136 TOP MARKING C1 ROHM lot No
Contextual Info: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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marking xt2 mmic
Abstract: EDS-101157 MCH18 MCR03 SXT-289 267M3502104 Sirenza amplifier SOT-89
Contextual Info: Product Description SXT-289 Sirenza Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth
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K154M20Z5UHVCWR
Abstract: CW15C153K CW15C102K CY30C105M CN15A150J CW30C184M CN30C472J CZ15C103M CN15C471J CW15A102K
Contextual Info: SERIES K Mono-Kap COG, X7R, Y5V and Z5U, 50VDC, 100VDC, and 200VDC Multilayer Capacitors Ceram ic Capacitors DESCRIPTION: ELECTRICA L PARAM ETERS: CAPACITANCE: Measured @ 1Mhz @ 1.0+0.2 VRMS @ 25°C for COG types with C < 1000pF Measured @ 1Khz @ 1.0±0.2 VRMS @ 25°C for
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267M3502104K
Abstract: 2425-C
Contextual Info: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with
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RF AMP marking c7 sot-89
Abstract: marking 25 mmic sot-89 9C0603 ordering Sirenza amplifier SOT-89 Marking
Contextual Info: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with
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Contextual Info: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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104 z5f capacitor
Abstract: D203Z69Z5ULABED D501K29Z5FNAAEM z5v cap D101M33Z5URAAEM Dd502 dd181 DD6-103 d432m D121K29S3NNAAAL
Contextual Info: SERIES D AND S i — i 50VDC through 6KVDC, EIA Class I, II and III, General Purpose and Temperature Stable, Ceramic Disc Capacitors Ceramic Capacitors DESCRIPTION: Our General Purpose and Temperature Stable capacitors are available with DC Voltage ratings
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