SXA289 Search Results
SXA289 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SXA-289 | Sirenza Microdevices | 5-2000 MHz Medium Power GaAs HBTAmplifier | Original | 410.44KB | 7 | ||
| SXA-289 | Stanford Microdevices | 5-2000 MHz medium power GaAs HBT amplifier | Original | 238.54KB | 6 |
SXA289 Price and Stock
Sirenza Microdevices SXA-289RF Amp Single Power Amp 2GHz 6V 4-Pin(3+Tab) SOT-89 T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SXA-289 | 135 |
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Sirenza Microdevices SXA-289-BLK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SXA-289-BLK | 135 |
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Get Quote | |||||||
SXA289 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
XA2 MMIC
Abstract: TOP MARKING C1 ROHM lot No MPO-100136 SIRENZA Sirenza C4 marking
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Original |
sxa-289mpo-100136016ref118ref+7 | |
Sirenza amplifier SOT-89 Marking
Abstract: .XA2
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Original |
sxh-189sxa-289016ref118ref+4 | |
XA2 MMIC
Abstract: Xa2 TRANSISTOR
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Original |
sxa-289eds-100622xa2 mmicxa2 transistor | |
Xa2 TRANSISTOR
Abstract: XA2 MMIC SXA-289 Sirenza amplifier SOT-89 marking XA2 EDS-100622 RF transistor marking IN SOT-89 sxa289 TOP MARKING C1 ROHM ROHM SOT89 MARKING
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Original |
sxa-289016ref118ref041ref+9 | |
Xa2 TRANSISTOR
Abstract: transistor 289 MMIC "SOT 89" marking SXA-289 rf power amplifier 850 MHZ
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Original |
sxa-289016ref118ref041ref+5 | |
ze 003 driver
Abstract: SXA-289-TR1 ze 003 SXA-289
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Original |
sxa-289eds-100622ze 003 driversxa-289-tr1+1 | |
SXA-289Contextual Info: Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces |
Original |
sxa-289eds-100622 | |
SXA 900 MHz
Abstract: SXA-289 SXL-189-EB SXL-189-TR1 SXL-189-TR2
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Original |
sxl-189110ma1000pf100pf+5 | |
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Contextual Info: Preliminary Product Description SXL-189 Stanford Microdevices’ SXL-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces |
Original |
sxl-1891000pf100pf110ma+1 | |
XA2 MMIC
Abstract: MPO-100136 TOP MARKING C1 ROHM lot No
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Original |
sxa-289mpo-100136016ref118ref+5 | |
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Contextual Info: Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces |
Original |
sxa-289 | |
XA2 MMICContextual Info: Preliminary Preliminary Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular |
Original |
sxa-289100maeds-100622xa2 mmic | |
SXA-289Contextual Info: Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces |
Original |
sxa-289 | |
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Contextual Info: Product Description SXA-289 Stanford M icrodevices’ SXA-289 am plifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT am plifier housed in low-cost surface-m ountable plastic package. These HBT am plifiers are fabricated using m olecular beam epitaxial growth technology which produces |
OCR Scan |
sxa-289 |