MOTOROLA TRANSISTOR NUMBER 18 Search Results

bf433

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
Contextual Info: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.

transistor 81 110 w 63

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •

MC33094DW

Contextual Info: Freescale Semiconductor Advance Information Document Number: MC33094 Rev. 1.0, 10/2006 Ignition Control 33094 Designed for automotive ignition applications in 12 V systems, the 33094 provides outstanding control of the ignition coil when used with an appropriate Motorola Power Darlington Transistor. Engine control

ignition coil driver cross reference

Abstract: motorola automotive transistor coil ignition ignition coil npn power darlington Triggered spark gap hall effect sensor ignition COIL IGNITION motorola transistor ignition MC33094DWR2 automotive ignition coil MC33094DW
Contextual Info: Freescale Semiconductor Advance Information Document Number: MC33094 Rev. 1.0, 10/2006 Ignition Control 33094 Designed for automotive ignition applications in 12 V systems, the 33094 provides outstanding control of the ignition coil when used with an appropriate Motorola Power Darlington Transistor. Engine control

44n25

Abstract: 4N28 opto 4N25 6 pin dip optoisolator tl7500 730A-04
Contextual Info: MOTOROLA Jameco Part Number 144240 SEMICONDUCTOR TECHNICAL DATA Order this document by 4N25/D 4N25 * 4N25A* 4N26 * 4N27 4N28 GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [CTR = 20% Min] The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide

automotive transistor coil ignition

Abstract: SPARK GAP 350v CR 109 IGNITION MODULE zener diode A 36 motorola automotive transistor coil ignition ignition coil driver cross reference MCZ33094EG
Contextual Info: Freescale Semiconductor Advance Information Document Number: MC33094 Rev. 1.0, 10/2006 Ignition Control 33094 Designed for automotive ignition applications in 12 V systems, the 33094 provides outstanding control of the ignition coil when used with an appropriate Motorola Power Darlington Transistor. Engine control

H11AA1

Abstract: 730A-04 h11aa2
Contextual Info: Jameco Part Number 320434 MOTOROLA Order this document by H11AA1/D SEMICONDUCTOR TECHNICAL DATA H11AA1* H11AA2 H11AA3 H11AA4* GlobalOptoisolator 6-Pin DIP Optoisolators AC Input/Transistor Output [CTR = 20% Min] [CTR = 10% Min] The H11AA1, H11AA2, H11AA3, H11AA4 devices consist of two gallium–

MTP8N45

Contextual Info: MOTOROLA SC XSTRS/R D I• b3b?as4 aoâibîB a ime F I T-ÌÌ-I3 MOTOROLA ■ I SEM ICO NDUCTO R TECHNICAL DATA IRF340 Part Number N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTOR IRF340 V d SS 400 V rDS on >D 0.55 n 10 A This TM O S Power FET is designed for high voltage, high speed

irf 1962

Abstract: irf all transistor 840 Transistor 0235 IRF transistor irf 840 IRF 840 MOSFET IRF 840 transistor irf 647 MTP8N45 IRF843
Contextual Info: MOTOROLA IRF840 IRF841 IRF842 IRF843 SEMICONDUCTOR TECHNICAL DATA Part Number N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR T h e se T M O S Po w er F E T s are designed for high voltage, high speed pow er sw itch in g applications su ch as sw itch in g regulators,

MRF9331

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor ‘ European Part Number . d e sign e d prim arily for u se in low p ow er am plifiers to 1 GHz. Ideal for p a ge rs and other battery operated sy ste m s w here low pow er c o n su m p tio n is critical.

Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF340 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number V DSS rDS on» <d IRF340 400 V 0.55 n 10 A This TM O S Pow er FET is d esigned fo r h ig h volta g e , high speed p o w e r sw itch in g a p p lica tio n s such as sw itch in g re g u lators, co n ­

10205 transistor

Abstract: JF18004
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 18004* M JF 18004* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Prttanrtd D«vlc* POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS

Contextual Info: MOTOROLA O rder this docum ent by MJE18009/D SEMICONDUCTOR TECHNICAL DATA M JE 18009 M JF18009 Designer’s Data Sheet SW ITCHMODE ™NPN Silicon Planar Pow er Transistor POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific state-of-the-art die designed for

F18002

Abstract: 3704 transistor WE VQE 11 E Motorola Bipolar Power Transistor Data FR 3708 e180 MJF18002 221A-06 221D MJE18002
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SW ITCHMODE™ M JE 18002* M JF18002* NPN Bipolar Power Transistor For Switching Power Supply Applications 'M otorola Preferred Dsvlce POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS

flyback transformer construction

Abstract: THOMSON B2 ferrite material MOSFET IRF 540 AS A SWITCH AN4001 orega transformer SMT4 E-4215A Thomson capacitors lcc 28V to 110V transformer c4460 MC44603
Contextual Info: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document as AN4001/D A N 4 0 0 1 /D MC44603 in a 110W output SMPS application 80-140Vrms and 180-280Vrms mains voltages by Joel Turchi Power Management Products Operation Application Laboratory, Motorola, Toulouse, France

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE 18206 M JF18206 D esigner’s Data Sheet SWITCHMODE™ NPN Bipolar Power TVansistor for Electronic Light B allast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS

Contextual Info: MOTOROLA Order this document by MJE18002/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 18002* M JF 18002* SWITCH MODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘ Motorola Preferred Device POWER TRANSISTOR

Contextual Info: MOTOROLA O rder this docum ent by MJE18206/D SEMICONDUCTOR TECHNICAL DATA M JE 18206 M JF18206 D esigner’s Data Sheet SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light B allast and Sw itching Power Supply Applications POWER TRANSISTORS

orega transformer SMT4

Abstract: MC44603P THOMSON B2 ferrite material orega flyback transformers orega flyback transformer MC44603 E-4215A orega transformer OREGA smt4 SMT4 former
Contextual Info: MOTOROLA Order this document by AN1669/D SEMICONDUCTOR APPLICATION NOTE AN1669 MC44603 in a 110 W Output SMPS Application 80-140 Vrms and 180-280 Vrms Mains Voltages by Joël Turchi Power Management Products Operation Application Laboratory, Motorola, Toulouse, France

Contextual Info: MOTOROLA O rder this docum ent by MJE18204/D SEMICONDUCTOR TECHNICAL DATA M JE 18204 M JF18204 D esigner’s Data Sheet SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light B allast and Sw itching Power Supply Applications POWER TRANSISTORS

Contextual Info: MOTOROLA O rder this docum ent by MJE18009/D SEMICONDUCTOR TECHNICAL DATA M JE 18009 M JF18009 D esigner’s Data Sheet SWITCHMODE™ NPN Silicon Planar Pow er Transistor POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific s ta te -o f-th e -a rt die designed for

JE182

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE 18204 M JF18204 Designer’s Data Sheet SWITCHMODE™ NPN Bipolar Power TVansistor for Electronic Light B allast and Switching Power Supply Applications POW ER TRANSISTORS 5 A M PERES 1200 VOLTS 35 and 75 WATTS

Contextual Info: Orc er ' Y s c’a 'a s'ioe* MOTOROLA i bocíí.': SEMICONDUCTOR TECHNICAL DATA MJ E 18002 M JF18002 Designer’s Data Sheet SWITCHMODE™ M otorola Preferred D e v ice s NPN B ipolar Pow er Transistor For S w itching Pow er Supply A pplications The MJE/MJF18002 have an applications specific state-of-the-art die designed for use

motorola 9100-11

Abstract: Battery Managements MC33120 MC33120P mjd41 rs 3060 cj 1N4002 MC33120FN ST12 ST21
Contextual Info: 02/18/:0 06:24 To Keith Ellis From Motorola Mfax Ph: 602-244-6591 Fax: 602-244-6693 03/33 Order this data shoot by MC33120/D l o i f - i°fO MOTOROLA MC33120 SEMICONDUCTOR TECHNICAL DATA Subscriber Loop Interface Circuit SUBSCRIBER LOOP INTERFACE CIRCUIT SLIC