DELTA fan bfb
Abstract: BC237 TRANSISTOR REPLACEMENT FOR 2N3053 BC547 REPLACE t1 bc140 BC108 motorola 2n2222 sot323 MOTOROLA LOT MARKINGS
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Amplifier Transistor MPSH81 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage
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mpsh81226aamsc1621t1msc2404+14msd1819amv1620mv1624mv1636mv1640mv1642delta fan bfbbc237transistor replacement for 2n3053bc547 replacet1 bc140bc108 motorola2n2222 sot323motorola lot markings
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diode l 0607
Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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m1ma141/2kt1inch/3000m1ma141/2kt3inch/10+6m1ma141kt1m1ma142kt170/sotmsc1621t1diode l 0607bc237
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BC237
Abstract: 16 pin dip with heat sink
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diode M1MA141WAT1 M1MA142WAT1 This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which
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m1ma141/2wat1inch/3000m1ma141/2wat3inch/10+7m1ma141wat1m1ma142wat170/sotm1ma142wat218amsc1621t1bc23716 pin dip with heat sink
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BC237
Abstract: MARKING CODE diode sod123 W1 rlra
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diodes M1MA151WAT1 M1MA152WAT1 These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59
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m1ma151/2wat1inch/3000m1ma151/2wat3inch/10+8m1ma151wat1m1ma152wat1m1ma152wat218amsc1621t1msc2404bc237marking code diode sod123 w1rlra
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BC237
Abstract: 6 21 X2 marking code sot 323
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.
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m1ma151/2at1inch/3000m1ma151/2at3inch/10+6m1ma151at1m1ma152at1msc1621t1msc2404bc2376 21 x2 marking code sot 323
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2N5458
Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.
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m1ma151/2kt1inch/3000m1ma151/2kt3inch/10+6m1ma151kt1m1ma152kt1volta218amsc1621t12n5458bc237
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marking SC59 Transistor
Abstract: BC237 self adhesive label 2N5670 equivalent M1MA151 marking jc 216 sc
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diodes M1MA151WKT1 M1MA152WKT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59
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m1ma151/2wkt1inch/3000m1ma151/2wkt3inch/10+11m1ma151wkt1m1ma152wkt1m1218amsc1621t1msc2404marking sc59 transistorbc237self adhesive label2n5670 equivalentm1ma151 markingjc 216 sc
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BC237
Abstract: DUAL GENERAL PURPOSE TRANSISTORS marking code D3 SOT23 component marking code mt
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode M1MA141WKT1 M1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package
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m1ma141/2wkt1inch/3000m1ma141/2wkt3inch/10+8m1ma141wkt1m1ma142wkt170/sotm1218amsc1621t1bc237dual general purpose transistors marking code d3sot23 component marking code mt
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Low Voltage Output Amplifier Surface Mount MSD1328-RT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 25 Vdc Collector–Emitter Voltage
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msd1328-rt1colle218amsc1621t1msc2404+7msd1819amv1620mv1624mv1636mv1640mv1642bc237
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BC237
Abstract: 2N3019 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN General Purpose Amplifier Transistors Surface Mount MSD601-RT1* MSD601-ST1 COLLECTOR 3 2 BASE MAXIMUM RATINGS TA = 25°C 3 1 EMITTER 2 1 Symbol Value Unit Collector–Base Voltage V(BR)CBO 60 Vdc Collector–Emitter Voltage
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msd601-rt1msd601-st1msc1621t1msc2404+8msd1819amv1620mv1624mv1636mv1640mv1642bc2372n3019 motorola
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP General Purpose Amplifier Transistor Surface Mount MSB709-RT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO – 60
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msb709-rt1m218amsc1621t1msc2404+7msd1819amv1620mv1624mv1636mv1640mv1642bc237
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MSC2404
Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage
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msa1022-ct1emitte218amsc1621t1msc2404+15msd1819amv1620mv1624mv1636mv1640mv1642mpf3821bc237mps8093bcy72mmbf4856mad130pmps3866bcy71 alternativebss72
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BF245
Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30
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msc2295-bt1msc2295-ct1msc1621t1msc2404+14msd1819amv1620mv1624mv1636mv1640mv1642bf245bc237mps8093bf244msa1022msc2295mad1107pmps6568
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marking code J111
Abstract: BC237 2N2904 bc547 marking transistor BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN General Purpose Amplifier Transistor Surface Mount MSD602-RT1 Motorola Preferred Device COLLECTOR 3 3 2 2 BASE MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector–Base Voltage V(BR)CBO 60 Vdc Collector–Emitter Voltage
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msd602-rt1ib218amsc1621t1msc2404+11msd1819amv1620mv1624mv1636mv1640mv1642marking code j111bc2372n2904bc547 marking transistorbcy72
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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mmbfj177lt1236abmsc1621t1msc2404+6msd1819amv1620mv1624mv1636mv1640bc237
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transistor 2N5458
Abstract: BC237 BC848 2N930 NPN transistor FREE
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its
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red218amsc1621t1msc2404msd1819a+10mv1620mv1624mv1636mv1640mv1642mv1644transistor 2n5458bc237bc8482n930 npn transistor free
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SOT23 JEDEC standard orientation pad size
Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is
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ot-223pzt2222at1pzt2907at1inch/1000+9pzt2907at3inch/4000uni218amsc1621t1sot23 jedec standard orientation pad sizesot-23 npn marking code vdbc237p2f sot-23transistor 2n5458
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its
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transistor BF245
Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The
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ot-223pzta14t1inch/1000u218a+10msc1621t1msc2404msd1819amv1620transistor bf245bc237transistor motorola 2n3053mmbf5486transistor replacement for 2n3053855 sot363
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BC237
Abstract: BC857A 0482 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP General Purpose Amplifier Transistor Surface Mount MSB710-RT1 COLLECTOR 3 Motorola Preferred Device 3 2 BASE 1 EMITTER 2 1 CASE 318D–04, STYLE 1 SC–59 MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector–Base Voltage
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msb710-rt1msc1621t1msc2404msd1819a+9mv1620mv1624mv1636mv1640mv1642mv1644bc237bc857a0482 transistor
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BC237
Abstract: MSA1022 msc2295 BF391 "direct replacement"
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement Mode Silicon Gate TMOS E–FET SOT–223 for Surface Mount MEDIUM POWER TMOS FET 700 mA 240 VOLTS RDS on = 6.0 OHM This TMOS medium power field effect transistor is designed for
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m218amsc1621t1msc2404msd1819a+10mv1620mv1624mv1636mv1640mv1642mv1644bc237msa1022msc2295bf391 "direct replacement
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motorola p1f
Abstract: hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for
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ot-223pzt2907at1pzt2222at1inch/1000+12pzt2222at3inch/4000unit218amsc1621t1motorola p1fhie for bc547bbc237transistor motorola 2n3053marking p1f619 sc-59p1f markingmarking code zi sot363
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