MOSFET VN10 Search Results

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

TP2350B

Abstract: mosfet vn10 TRIPATH TC2001 Tp2350 VN10 VN10 application 13N10 100uF 150v capacitor what is the best speaker wattage and ohms TRIPATH TECHNOLOGY
Contextual Info: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TP2150B DUAL HIGH SIDE AND LOW SIDE MOSFET DRIVER Technical Information Revision 1.7 – June 2004 GENERAL DESCRIPTION The TP2150B is a high speed, dual high side and low side MOSFET driver. The TP2150B level shifts CMOS

DMG1012

Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
Contextual Info: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS

Contextual Info: N-CHANNEL ENHANCEMENT MODE MOSFET VN10KCSM4 • Low RDS on , VGS(th), CISS And Fast Switching Speeds • Hermetic Surface Mount LCC3 package. • Ideally Suited For Power Supply Circuits, Switching And Driver (Relay, Solenoid, Lamp etc.) Applications • Screening Options Available

VN10K mosfet

Abstract: LE17 VN10K
Contextual Info: N-CHANNEL ENHANCEMENT MODE MOSFET VN10K • Low RDS on , VGS(th), CISS And Fast Switching Speeds • Hermetic TO-18 Metal package. • Ideally Suited For Power Supply Circuits, Switching And Driver (Relay, Solenoid, Lamp etc.) Applications • Screening Options Available

"TO-52 package"

Abstract: LE17 VN10KE
Contextual Info: N-CHANNEL ENHANCEMENT MODE MOSFET VN10KE • Low RDS on , VGS(th), CISS And Fast Switching Speeds • Hermetic TO-52 Metal package. • Ideally Suited For Power Supply Circuits, Switching And Driver (Relay, Solenoid, Lamp etc.) Applications • Screening Options Available

mosfet vn10

Abstract: VN10 VN10KM MOSFET Drivers 40V
Contextual Info: VN10 KM n-Channel Enhancement-mode Vertical Power MOSFET OTMWIL FEATURES • Directly drives Inductive loads APPLICATIONS • LED and lamp drivers • High speed, high peak current switching • TTL and CMOS to high current interface • Inherent current sharing capability when paralleled

VN10K-TO18

Contextual Info: VN10K-TO18 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOSFET 5.84 (0.230) 5.31 (0.209) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) D 12.7 (0.500) min. 0.48 (0.019) 0.41 (0.016) dia. G S 2.54 (0.100) Nom. 3 1 2 TO18 PACKAGE

0610L

Abstract: 2222l 10kls VN10KLS
Contextual Info: _ VN0610L, VN10KE/KLS, VN2222L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (Q ) V GS(th) (V ) Id (A) 5 @ V GS = 1 0 V 0.8 to 2.5 0.27 VN 0610L 5 @ V GS = 1 0 V

Contextual Info: un itti llll SEME VN10KCSM4 LAB N-CHANNEL ENHANCEMENT MODE MOSFET MECHANICAL DATA Dimensions in mm inches 1.02±0.20 (0.04 ± 0.006) 2.03 ± 0.20 (0.08 ± 0.008) LCC3 - CERAMIC SURFACE MOUNT PACKAGE PIN 1 - Drain Underside View PIN 2 - N/C PIN 3 - Gate ABSOLUTE MAXIMUM RATINGS

Contextual Info: mi SEME VN10KCSM4 LAB N-CHANNEL ENHANCEMENT MODE MOSFET MECHANICAL DATA Dimensions in mm inches 1.02 ± 0.20 (0.04 ± 0.008) 2.03 ± 0.20 (0.0 8 1 0.008) LCC3 - CERAMIC SURFACE MOUNT PACKAGE Underside View PIN 1 - Drain PIN 2 - N/C PIN 3 - Gate ABSOLUTE MAXIMUM RATINGS

VN10LE

Contextual Info: VN10LE/LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LLS 5 @ VGS = 10 V 0.8 to 2.5

VN10KLS

Abstract: VN0610L VN10KE VN2222L
Contextual Info: _ VN0610L, VN10KE/KLS, VN2222L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (Q ) V GS(th) (V ) I d (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN0610L 5 @ VGs = 10 V 0.8 to 2.5

VN0605T

Abstract: VN0610LL VN10LLS VN2222LL
Contextual Info: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0

VN10KM MOSFET

Abstract: siliconix VN10KM VN10KM VN10KM equivalent MOSFET vn2222l VN10K VN10KE VN0610L VN10KT VN2222L
Contextual Info: VN0610L, VN10KE/M/T, VN2222L N-Channel Enhancement-Mode MOSFET Transistors Zener Gate Protected Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KE 5 @ VGS = 10 V 0.8 to 2.5 0.17 VN10KM

Contextual Info: VN10LP Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)270m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)625m Minimum Operating Temp (øC)

Contextual Info: VN10LF Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)150m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC)

VN10KM MOSFET

Abstract: VN2222L VN10KM equivalent VN10KE VN10K VN10KM MOSFET vn2222l siliconix VN10KM VN0610L VN10KT
Contextual Info: VN0610L, VN10KE/M/T, VN2222L N-Channel Enhancement-Mode MOSFET Transistors Zener Gate Protected Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KE 5 @ VGS = 10 V 0.8 to 2.5 0.17 VN10KM

mosfet vn10

Abstract: vn10 VN2222LM mosfet vn10lm
Contextual Info: VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V

mosfet vn10lm

Abstract: VN10 mosfet vn10 VN10LE VN0605T VN0610LL VN10LM VN2222LL VN2222LM S-52429-Rev
Contextual Info: VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V

zener diode marking CODE VN S2

Abstract: VN10KM MOSFET siliconix VN10KM VN0610L VN10KE VN10KM VN10KT VN2222L YS 150 017
Contextual Info: M IC VN0610L, VNIOKE/M/T, YN2222L Semiconductors N-Channel Enhancement-Mode MOSFET Transistors Zener Gate Protected Product Summary rDS<on Max {Q) V GS<th) V) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KE 5 @ VGS = 10 V 0.8 to 2.5 0.17 P art Number V(BR)DSS Min (V)

MOSFET vn2222l

Abstract: VN10KLS
Contextual Info: VN0610L, VN10KE/KLS, VN2222L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KE 5 @ VGS = 10 V 0.8 to 2.5 0.17 5 @ VGS = 10 V

Contextual Info: VN10KM Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)15 I(D) Max. (A)310m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)

Contextual Info: VN10LM Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)30 I(D) Max. (A)300m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)