MOSFET PARAMETERS Search Results

Contextual Info: LM2724A LM2724A High Speed 3A Synchronous MOSFET Driver Literature Number: SNVS242A LM2724A High Speed 3A Synchronous MOSFET Driver chronization operation of the bottom MOSFET can be disabled by pulling the SYNC pin to ground. General Description The LM2724A is a dual N-channel MOSFET driver which can

Contextual Info: UNISONIC TECHNOLOGIES CO., UF830 MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching

2P50EG

Abstract: 2P50 2p50e AN569 MTP2P50E MTP2P50EG mosfet transistor 400 volts.100 amperes
Contextual Info: MTP2P50E Power MOSFET 2 Amps, 500 Volts P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed

97001A

Abstract: AN1001 AN-994
Contextual Info: PD - 97001A PROVISIONAL IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF SMPS MOSFET Applications l High frequency DC-DC converters l Plasma Display Panel l Lead-Free HEXFET Power MOSFET Key Parameters VDS VDS Avalanche min. RDS(ON) max @ 10V TJ max Benefits

MCH3312

Abstract: CPH5854 SB1003M3 A05166 marking YG
Contextual Info: CPH5854 Ordering number : ENA0516 SANYO Semiconductors DATA SHEET CPH5854 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),

48V SMPS

Abstract: smps 48v 12v ISL6144 ISL6144IV ISL6144IVZA MO-220 0805 resistor package
Contextual Info: ISL6144 Data Sheet February 15, 2007 FN9131.3 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode

Contextual Info: Ordering num ber: EN 4893 _FX853 No.4893 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications F eatu res • Composite type composed of a low ON-resistance N-channel MOSFET for ultrahigh-speed switching

AN569

Abstract: MTP1N50E mtp1n
Contextual Info: MTP1N50E Preferred Device Power MOSFET 1 Amp, 500 Volts N–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, the MOSFET is designed to

Contextual Info: Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171

12N60l

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

high-speed power mosfet 2Mhz

Abstract: LM27212 5Vto28V
Contextual Info: LM27222 LM27222 High-Speed 4.5A Synchronous MOSFET Driver Literature Number: SNVS306A LM27222 High-Speed 4.5A Synchronous MOSFET Driver General Description Features The LM27222 is a dual N-channel MOSFET driver designed to drive MOSFETs in push-pull configurations as typically

ISD18A

Abstract: MOSFET 500V 18A 18n50
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET 500V, 18A N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode Power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT9971P Preliminary Power MOSFET 5.0A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT9971P is an N-Channel enhancement mode power MOSFET providing customers with high switching speed, cost-effectiveness and minimum on-state resistance.

MTP2P50E

Abstract: AN569 mosfet transistor 400 volts.100 amperes
Contextual Info: MTP2P50E Preferred Device Power MOSFET 2 Amps, 500 Volts P–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this Power MOSFET is designed

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UFR9120 Preliminary Power MOSFET P CHANNEL POWER MOSFET „ DESCRIPTION The UTC UFR9120 is a P-channel power MOSFET using UTC’s advanced processing technology to provide customers a minimum on-state resistance and high switching speed

MTP1N60E

Abstract: AN569 MTP1N60
Contextual Info: MTP1N60E Preferred Device Power MOSFET 1 Amp, 600 Volts N–Channel TO–220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, the MOSFET is designed to

LIN opto isolator

Abstract: SPM6M080-010D 210C DS34C87 SFH6186-4
Contextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. D.1 Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE

AN569

Abstract: MTW24N40E mosfet transistor 400 volts.100 amperes
Contextual Info: MTW24N40E Preferred Device Power MOSFET 24 Amps, 400 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

MTW14N50

Abstract: MTW14N50E AN569 MT*14N50E MTW14N50E-D
Contextual Info: MTW14N50E Preferred Device Power MOSFET 14 Amps, 500 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

19n10l

Abstract: Mosfet N-Channel 19N10, TO-251 19n10 mosfet 19N10G-TQ2-T 19N10G-TN3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 100V N-Channel MOSFET „ DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors MOSFET are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the

UTC12N70

Abstract: 12N70 220f1 12N70L-TF3-T 12n70l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12 Amps, 700 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

UF840

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching

AUIRF7341Q

Abstract: AUIRF7341
Contextual Info: PD - 96362 AUTOMOTIVE MOSFET AUIRF7341Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Ultra Low On-Resistance Dual N Channel MOSFET Surface Mount Available in Tape & Reel 175°C Operating Temperature Automotive [Q101] Qualified

200 Amp bridge mosfet

Abstract: a4940 A4940KLPTR-T series connection of mosfet brush DC Motor control fast high side mosfet driver IPC7351 JESD51-5
Contextual Info: A4940 Automotive Full Bridge MOSFET Driver Features and Benefits Description ▪ High current gate drive for N-channel MOSFET full bridge ▪ Independent control of each MOSFET ▪ Charge pump for low supply voltage operation ▪ Cross-conduction protection with adjustable dead time