MOSFET N-CHANNEL 12 AMPERES Search Results

369A-13

Abstract: AN569 NTD3055 NTD3055-094 NTD3055-094-1 NTD3055-094T4 55094
Contextual Info: NTD3055−094 Power MOSFET 12 Amps, 60 Volts N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features • • • • • 12 AMPERES 60 VOLTS

me12n06el

Abstract: Nihon Inter Electronics me12n06
Contextual Info: CATALOG No NIEC-009 SINCE 1957 N IE C Industry Leader Power Semiconductor ME12N06EL ME12N06EL-F Power MOSFET Logic Level N-Channel Logic Level 12 Amperes 60 Volts RDS on = 0.18 Ohms FEATURES: • Fast Sw itching • Low D rive R equirem ents to Interface

n50a

Abstract: 12N50A 12n50 IXYS CORPORATION TO-204AA ups 017 IXTH max 3540 D-68623 IXTM12N50A
Contextual Info: Standard Power MOSFET IXTH 12 N50A IXTM 12 N50A VDSS ID25 RDS on 500 V 500 V 12 A 12 A 0.4 Ω 0.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V V GS Continuous

Power MOSFET TT 2146

Abstract: mosfet TT 2146 n50A os TT 2222
Contextual Info: XYS Standard Power MOSFET IXTH 12 N50A IXTM 12 N50A ^DSS ! ^D25 500 V 12 A 500 V I 12 A P DS on 0.4 i l 0.4 i l N-Channel Enhancement Mode Symbol Test Conditions VDSS T j = 25°C to 150°C 500 Tj = 25°C to 150°C; Res = 1 Mi2 500 V Maximum Ratings V Vgs

Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 600 V ID25 = 12 A Ω RDS on ≤ 360 mΩ ≤ 200 ns trr IXFC 22N60P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings

IXTH130N15T

Abstract: IXTQ130N15T
Contextual Info: Preliminary Technical Information TrenchHVTM Power MOSFET IXTH130N15T IXTQ130N15T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 150 V = 130 A Ω ≤ 12 mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C

22N60P

Abstract: 22n60 nt314 C4522 IXFC22N60P
Contextual Info: PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 600 V ID25 = 12 A Ω RDS on ≤ 360 mΩ ≤ 200 ns trr IXFC 22N60P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings

Contextual Info: -*r -jr r'“'* Y S X w X v Standard Power MOSFET IXTH 12 N50A IXTM 12 N50A * DSS ^D25 500 V 500 V 12 A 12 A p DS on a 0.4 Q 0.4 N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj V DGR Maximum Ratings = 25°C to 150°C 500 V T j = 25°C to 150°C; RgS = 1 M il

Contextual Info: UNITRODE CORP 9347963 =12 »71^347^1=3 U N I T R O D E CORP 92D 10Q45 □010&45 D POWER MOSFET TRANSISTORS 200 Volt, 0.8 Ohm N-Channel FEATURES • Fast Switching • Low drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability

12n50

Contextual Info: IXFA 12N50P IXFP 12N50P Advance Technical Information PolarHVTM Power MOSFET IXFA 12N50P IXFP 12N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Maximum Ratings = 500 = 12 ≤ 0.5 ≤ 200 Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C

IXTP76N075T

Abstract: 76n075 76N075T ixtp76n075 IXTA76N075T 305v 76N07
Contextual Info: Preliminary Technical Information IXTA76N075T IXTP76N075T TrenchMVTM Power MOSFET = = VDSS ID25 75 V 76 A Ω 12 mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 = 500 = 12 ≤ 0.5 RDS on V A Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V

IXTP76N075

Abstract: 76n075
Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA76N075T IXTP76N075T VDSS ID25 = = 75 V 76 A Ω 12 mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 = 500 = 12 ≤ 0.5 RDS on V A Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25

12N50P

Contextual Info: PolarHVTM Power MOSFET IXTA 12N50P IXTI 12N50P IXTP 12N50P = 500 = 12 ≤ 0.5 VDSS ID25 RDS on V A Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500

IXFQ12N80P

Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS = 800 V = 12 A ≤ 0.85 Ω ≤ 250 ns VDSS ID25 RDS on trr N-Channel Enhancement Mode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

12n80

Abstract: 12N80P
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFA 12N80P IXFH 12N80P IXFP 12N80P = = ≤ ≤ VDSS ID25 RDS on trr 800 V 12 A 1.1 Ω 250 ns N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

STM4884A

Abstract: WT4884AM
Contextual Info: WT4884AM Surface Mount N-Channel Enhancement Mode MOSFET 8 7 12 AMPERES D S 2 6 D 3 S 5 D 4 G Features: DRAIN CURRENT D S 1 P b Lead Pb -Free DRAIN SOURCE VOLTAGE 30 VOLTAGE *Super high dense cell design for low RDS(ON) R DS(ON) <6 mΩ@VGS=10V R DS(ON) <8.5 mΩ@VGS=4.5V

Contextual Info: VKM 60-01P1 HiPerFETTM Power MOSFET ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ H-Bridge Topology in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 A1 K 12 E10 P 18 R 18 NTC Preliminary data sheet L9 K 13 F10 X 15

Contextual Info: VKM 60-01P1 HiPerFETTM Power MOSFET H-Bridge Topology in ECO-PAC 2 ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 K 12 A1 L9 E10 P 18 R 18 NTC K 13 F10 X 15 K10 T 18 V 18 X 18

60-01P1

Abstract: eco-pac
Contextual Info: VKM 60-01P1 HiPerFETTM Power MOSFET H-Bridge Topology in ECO-PAC 2 ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 A1 K 12 L9 E10 P 18 R 18 NTC K 13 F10 X 15 K10 T 18 V 18 X 18

Contextual Info: FM200TU-3A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 100 Amperes/150 Volts A D F G G H K Q L P AB E AE J 7 B N P X (11 PLACES) Z AB AC R AD N L M 1 13 14 T W B A S AF U TC MEASURED

Contextual Info: FM600TU-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 300 Amperes/100 Volts A D F G G H K Q L P AB E AE J 7 B N P X (11 PLACES) Z AB AC R AD N L M 1 13 14 T W B A S AF U TC MEASURED

Contextual Info: FM600TU-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 300 Amperes/100 Volts A D F G G Q H K N X (11 PLACES) L L M P AB Z AB AC N P R AD 7 B E AE J 1 13 14 W T S B A AF U TC MEASURED