IXTA76N075T Search Results

IXTA76N075T Datasheets (1)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTA76N075T		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 76A TO-263	Original	PDF		5

IXTA76N075T Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXTP76N075T Abstract: 76n075 76N075T ixtp76n075 IXTA76N075T 305v 76N07 Contextual Info: Preliminary Technical Information IXTA76N075T IXTP76N075T TrenchMVTM Power MOSFET = = VDSS ID25 75 V 76 A Ω 12 mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	ixta76n075t ixtp76n075t o-263 o-220 +576n075t 76n075 ixtp76n075 305v 76n07	PDF
IXTP76N075 Abstract: 76n075 Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA76N075T IXTP76N075T VDSS ID25 = = 75 V 76 A Ω 12 mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	ixta76n075t ixtp76n075t o-263 76n075t +2ixtp76n075 76n075	PDF
1262-33 Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T Contextual Info: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.	Original	5v-100v o-247 plus220 isoplus220tm +14plus220smd o-252 o-220 o-263 1262-33 ixtp44n10t ixth200n10t ixtp76n075 ixta60n10t ixtq130n10t ixtp98n075t ixtp130n10t ixtp240n055t ixtp64n055t	PDF

Catalog Datasheet

Type

Document Tags

PDF

IXTP76N075T

Abstract: 76n075 76N075T ixtp76n075 IXTA76N075T 305v 76N07
Contextual Info: Preliminary Technical Information IXTA76N075T IXTP76N075T TrenchMVTM Power MOSFET = = VDSS ID25 75 V 76 A Ω 12 mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Original

ixta76n075t ixtp76n075t o-263 o-220 +5

PDF

IXTP76N075

Abstract: 76n075
Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTA76N075T IXTP76N075T VDSS ID25 = = 75 V 76 A Ω 12 mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Original

ixta76n075t ixtp76n075t o-263 76n075t +2

PDF

1262-33

Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
Contextual Info: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.

Original

5v-100v o-247 plus220 isoplus220tm +14

PDF