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Cyg Wayon Circuit Protection Co Ltd WMO12N80M3 Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	WMO12N80M3		1,046		1	1 $2.03 10 $1.62 100 $1.22 1000 $0.97 10000 $0.87	Buy Now
Cyg Wayon Circuit Protection Co Ltd WML12N80M3 Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 31W; TO220FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	WML12N80M3		401		1	1 $1.56 10 $1.42 100 $1.14 1000 $1.06 10000 $1.06	Buy Now
IXYS Corporation IXFH12N80P Transistor: N-MOSFET; Polar™; unipolar; 800V; 12A; 360W; TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFH12N80P				1	1 $5.56 10 $4.42 100 $4.12 1000 $4.12 10000 $4.12	Get Quote
Mouser Electronics	IXFH12N80P					1 - 10 - 100 - 1000 $4.86 10000 $4.86	Get Quote
Bristol Electronics	IXFH12N80P		29		1	1 $7.98 10 $5.19 100 $3.99 1000 $3.99 10000 $3.99	Buy Now
Cyg Wayon Circuit Protection Co Ltd WMM12N80M3 Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	WMM12N80M3				1	1 $1.07 10 $0.96 100 $0.77 1000 $0.71 10000 $0.71	Get Quote
Cyg Wayon Circuit Protection Co Ltd WMN12N80M3 Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO262
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	WMN12N80M3				1	1 $1.07 10 $0.96 100 $0.77 1000 $0.71 10000 $0.71	Get Quote

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12N80 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is	Original	12n80 o-220 o-220f1 o-220f2 +1qw-r502-594	PDF
12n80 Abstract: 12N80P Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFA 12N80P IXFH 12N80P IXFP 12N80P = = ≤ ≤ VDSS ID25 RDS on trr 800 V 12 A 1.1 Ω 250 ns N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	12n80p o-263 o-247 o-220 +2405b2 12n80	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is	Original	12n80 qw-r502-594	PDF
"12n80" Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is	Original	12n80 qw-r502-594	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary 12A, 800V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in	Original	12n80 o-220 o-220f1 qw-r502-594	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is	Original	12n80 qw-r502-594	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is	Original	12n80 12n80l-t47-t qw-r502-594	PDF
Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 12N80P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 800 V = 7 A Ω ≤ 0.93 mΩ ≤ 250 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol	Original	isoplus220tm 12n80p e153432 -55ved	PDF
12n80 Abstract: "12n80" Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary 12A, 800V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in	Original	12n80 o-220 o-220f1 qw-r502-594	PDF
12n80 Abstract: 12n80p Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 12N80P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 800 V = 7 A ≤ 0.93 mΩ Ω ≤ 250 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol	Original	isoplus220tm 12n80p e153432 12n80	PDF
12n80 Abstract: "12n80" PSPICE thyristor triac pspice AN3003 Contextual Info: 12N80 12N80 Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool	Original	fkpf12n80 o-220f o-220f-3 an-3003 +6moc3011 fkpf12n80ydtu 12n80 pspice thyristor triac pspice an3003	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF