MOSFET MARKING CODE B3 Search Results

Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

DIODE D12

Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

mosfet Marking Code b3

Abstract: diode c12 marking c12
Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

mosfet "marking code 44"

Abstract: TSM2NB60CP
Contextual Info: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

Contextual Info: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

Contextual Info: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 DPAK TO-251 (IPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

TSM6N50

Contextual Info: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-252 DPAK TO-251 (IPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.4 @ VGS =10V 2.8 General Description The TSM6N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

Contextual Info: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without

TSM2NB60

Abstract: mosfet 600V 2A
Contextual Info: Preliminary TSM2NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced

TSM4NB60CP

Abstract: 600v 4A mosfet
Contextual Info: Preliminary TSM4NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced

marking diode f11

Contextual Info: TSM5ND50 500V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS

marking E11 DIODE

Abstract: E11 diode
Contextual Info: TSM5ND50 500V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS

RESISTOR NETWORK SMD 8 PIN array isolated 2512

Abstract: 88em8011 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606
Contextual Info: Cover 88EM8011 Power Factor Correction Controller Datasheet Patents, Patents Pending Including US Pat. Nos. 7,266,001 and 7,292,013 Doc. No. MV-S104861-00, Rev. November 28, 2007 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8011

Contextual Info: FDZ7064N 30V N-Channel Logic Level PowerTrench BGA MOSFET General Description Features Combining Fairchild’s 30V PowerTrench process with state of the art BGA packaging, the FDZ7064N minimizes both PCB space and RDS ON . This BGA MOSFET embodies a breakthrough in packaging

Contextual Info: LF PA K 56 PSMN020-100YS N-channel 100V 20.5mΩ standard level MOSFET in LFPAK 26 March 2014 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

Contextual Info: FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space and RDS ON . This BGA MOSFET embodies a

1C225L

Abstract: PSMN1R2-25YLC 771-PSMN1R225YLC115 1C225
Contextual Info: LF PA K PSMN1R2-25YLC N-channel 25 V 1.3 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 1 — 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is

4C530

Abstract: 003A MARKING PSMN4R5-30YLC PSMN4R5 4C530L
Contextual Info: PSMN4R5-30YLC N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK Rev. 02 — 30 November 2010 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic

PSMN2R0-30YLE

Contextual Info: PSMN2R0-30YLE N-channel 30 V 2 mΩ logic level MOSFET in LFPAK 12 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and

si87xx

Contextual Info: Si87xx 5 K V LED E MULATOR I N PU T , O PEN C OLLECTOR O UTPUT I SOLA TORS Features  Pin-compatible, drop-in upgrades for  popular high-speed digital  optocouplers   Performance and reliability  advantages vs. optocouplers Resistant to temperature, age and 

BL8534CC3TR33

Abstract: marking LF sot-23-5 BL8534 MARKING 50 5PIN REGULATOR sot-23-5 marking code sot 23-5 marking code marking code lx sot circuit diagram of wireless system 1N4148 date code capacitor
Contextual Info: BL8534 High Efficiency Low Noise PFM Step-up DC/DC Converter DESCRIPTION FEATURES BL8534 series are CMOS-based PFM stepup DC-DC Converter. The converter can start up by supply voltage as low as 0.8V, and capable of delivering maximum 200mA output current at 3.3V output with 1.8V input Voltage.

Contextual Info: LF PA K 56 PSMN3R0-30YLD N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers

Contextual Info: LF PA K 56 PSMN1R4-40YLD N-channel 40 V 1.4 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 technology 11 July 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been