TSM2N60 Search Results

TSM2N60 Datasheets (9)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TSM2N60		Taiwan Semiconductor	N-Channel Power Enhancement Mode MOSFET	Original	PDF	157.68KB	4
TSM2N60		Taiwan Semiconductor	600V N-Channel Power MOSFET	Original	PDF	462.82KB	8
TSM2N60		Taiwan Semiconductor	600V N-Channel Power MOSFET	Original	PDF	462.82KB	8
TSM2N60		Unknown	N CHANNEL POWER ENHANCEMENT MODE MOSFET	Scan	PDF	216.8KB	3
TSM2N60CH		Taiwan Semiconductor	N CHANNEL POWER ENHANCEMENT MODE MOSFET	Scan	PDF	216.8KB	3
TSM2N60CP		Taiwan Semiconductor	N CHANNEL POWER ENHANCEMENT MODE MOSFET	Scan	PDF	216.8KB	3
TSM2N60ECH C5G		Taiwan Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 600V 2A TO251	Original	PDF	1.04MB
TSM2N60ECP ROG		Taiwan Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 600V 2A TO252	Original	PDF	1.04MB
TSM2N60SCW RPG		Taiwan Semiconductor	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 600MA SOT223	Original	PDF	405.89KB

TSM2N60 Price and Stock

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Taiwan Semiconductor


Taiwan Semiconductor TSM2N60ECP ROG Transistor Power MOSFET N-CH 600V 2A 3-Pin TO-252 T/R - Tape and Reel (Alt: TSM2N60ECP ROG)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TSM2N60ECP ROG	Tape & Reel			5,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Taiwan Semiconductor TSM2N60ECH C5G Transistor MOSFET N-CH 600V 2A 3-Pin TO-251 Tube - Rail/Tube (Alt: TSM2N60ECH C5G)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TSM2N60ECH C5G	Tube			15,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Taiwan Semiconductor TSM2N60SCW RPG Transistor MOSFET N-CH 600V 0.6A 3-Pin SOT-223 Plastic T/R - Tape and Reel (Alt: TSM2N60SCW RPG)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TSM2N60SCW RPG	Tape & Reel			5,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

TSM2N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without	Original	tsm2n60 o-220 o-251 o-252	PDF
TSM2N60CP Abstract: MOSFET 600V 1A 2a 400v mosfet to-251 TSM2N60 TSM2N60CH Contextual Info: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without	Original	tsm2n60 o-220 o-251 o-252 +4tsm2n60cp mosfet 600v 1a 2a 400v mosfet to-251 tsm2n60ch	PDF
25V 1A power MOSFET TO-220 Abstract: mosfet 600V 2A TO-252 N-channel MOSFET MOSFET TO-220 Contextual Info: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without	Original	tsm2n60 o-220 o-251 o-252 +425v 1a power mosfet to-220 mosfet 600v 2a to-252 n-channel mosfet mosfet to-220	PDF
18BSC Abstract: TSM2N60 TSM2N60CH TSM2N60CP Contextual Info: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without	Original	tsm2n60 o-220 o-251 o-252 +318bsc tsm2n60ch tsm2n60cp	PDF
Power MOSFET SOT-223 Abstract: mosfet 600V 6A N-CHANNEL TSM2N60SCW 600V 2A MOSFET N-channel pin diagram of MOSFET Diode bridge 600V 0.8A "Power MOSFET" a09 marking MOSFET 450 mosfet j 114 Contextual Info: TSM2N60S 600V N-Channel Power MOSFET SOT-223 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 0.6 General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without	Original	tsm2n60s ot-223 power mosfet sot-223 mosfet 600v 6a n-channel +8tsm2n60scw 600v 2a mosfet n-channel pin diagram of mosfet diode bridge 600v 0.8a power mosfet a09 marking mosfet 450 mosfet j 114	PDF
SOT-252 20v Abstract: N-Channel mosfet 600v 1a U26S 25CC TSM2N60 TSM2N60CH TSM2N60CP marking code 749 diode BBC u035 Contextual Info: $ TAIW AN TSM2N60 SEMICONDUCTOR 600V N-Channei Power MOSFET pb RoHS C O M P L IA N C E TO-251 TO-252 (DPAK) (IPAK) Jü F à P in D e f in it io n : 1. G ate 2. Drain 3. Source PRODUCT SUM M ARY V DS (V) R D S (o n )(Û ) I d (A) 6Û0 5 @ Vcs=10V 1 T 7V T	OCR Scan	tsm2n60 o-220 o-251 o-252 +9sot-252 20v n-channel mosfet 600v 1a u26s 25cc tsm2n60ch tsm2n60cp marking code 749 diode bbc u035	PDF
Contextual Info: TSM2N60S 600V N-Channel Power MOSFET SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)() ID (A) 600 5 @ VGS =10V 0.6 General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without	Original	tsm2n60s ot-223	PDF
TSM2N60CP Abstract: TSM2N60 TSM2N60CH 2a 400v mosfet to-251 Contextual Info: TSC TSIVI2N60 N-Channel Power Enhancement Mode MOSFET TO-251 TO-252 VDS= 600V lD = 2A Pin assignment: 1. Gate 2. Source 1 r d s fo n i’ 3. Drain 3 Vgs @ 10V, Ids @ 1.0A =4.4Q General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without	OCR Scan	tsm2n60 o-251 o-252 tsm2n60cp +2tsm2n60ch 2a 400v mosfet to-251	PDF
2a 400v mosfet to-251 Abstract: N-Channel mosfet 600v 1a BRIDGE 2A 600V MOSFET TO-220 MOSFET "CURRENT source" impedance mosfet 600V 2A TO-252 N-channel MOSFET Contextual Info: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without	Original	tsm2n60 o-220 o-251 o-252 +72a 400v mosfet to-251 n-channel mosfet 600v 1a bridge 2a 600v mosfet to-220 mosfet "current source" impedance mosfet 600v 2a to-252 n-channel mosfet	PDF
2a 400v mosfet to-251 Abstract: 600V 2A MOSFET N-channel MOSFET 400V TO-220 2a 400v mosfet marking code C5 N-Channel mosfet 600v 1a SOT c5 87 p channel mosfet 100v pin diagram of MOSFET 435 M dpak Contextual Info: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without	Original	tsm2n60 o-220 o-251 o-252 +102a 400v mosfet to-251 600v 2a mosfet n-channel mosfet 400v to-220 2a 400v mosfet marking code c5 n-channel mosfet 600v 1a sot c5 87 p channel mosfet 100v pin diagram of mosfet 435 m dpak	PDF
diode BY 252 Abstract: TSM2N60 TSM2N60CH TSM2N60CP Contextual Info: TSM2N60 N-Channel Power Enhancement Mode MOSFET VDS = 600V ID = 2A RDS on , Vgs @ 10V, Ids @ 1.0A =4.4Ω Pin assignment: 1. Gate 2. Drain 3. Source General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without	Original	tsm2n60 o-252 diode by 252 tsm2n60ch +1tsm2n60cp	PDF
TS13002 Abstract: TS2576 TS317 TS39204 dvd smps TS2596 TS34063 TSM2301 TS9007 TS431 Contextual Info: TAIWAN SEMICONDUCTOR APPLICATION NOTE LCD TV / Monitor TV Charger Connector UPS SMPS Audio Scanner DSC Blue Tooth Printer TS1117 TS431 TS34063 TS78xx TS34063 TS494 TS78xx TS78xx TS9000 TS9006 TS34063 TS108x TS317 TS13002 TS431 TSM2N60 TS431 TS358 TS79xx TS9001	Original	ts1117 ts431 ts34063 ts78xx +11ts494 ts9000 ts9006 ts13002 ts2576 ts317 ts39204 dvd smps ts2596 tsm2301 ts9007	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 f155-6a f155-10a f165-15a +11f175-25a irfb4115 bty79 equivalent diode skn 21-04 marking code w04 sot-23 bbc 598 479 diode mw 137 600g tfk 401 s 673 vishay telefunken tfk transistor infineon transistor marking w31 jys marking transistor	PDF