MOSFET E72 Search Results
MOSFET E72 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| ICL7667MJA/883B |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
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| AM9513ADIB |
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AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 |
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| CA3130AT/B |
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CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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| CA3130T |
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CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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MOSFET E72 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
25N80CContextual Info: IXKC 25N80C COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features MOSFET Symbol Conditions |
Original |
25n80cisoplus220e72873 | |
"SOT-227 B" dimensions
Abstract: 75N60 sot-227
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Original |
75n60cot-227e72873sot-227 b" dimensions+2 | |
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Contextual Info: Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S |
Original |
40n60cot-227e72873 | |
SOT-227 Package
Abstract: E72873 SOT-227 heatsink
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Original |
45n80cot-227e72873sot-227 package+1 | |
40N60C
Abstract: E72873
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40n60cot-227e72873 | |
IXKN75N60C
Abstract: 75n60 E72873
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75n60cot-227e72873ixkn75n60c+1 | |
SOT-227 heatsink
Abstract: 75n60 SOT-227 Package 335AB E72873 "SOT-227 B" dimensions
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75n60cot-227e72873sot-227 heatsink+4 | |
47N60CContextual Info: IXKH 47N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A RDS on) max = 70 m Low RDSon, high VDSS Superjunction MOSFET D TO-247 G G fl D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C |
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47n60co-247e72873id100+1 | |
85N60C
Abstract: UPS SIEMENS E72873 ID100
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85n60co-264e72873id100+2 | |
85N60C
Abstract: UPS SIEMENS E72873 ID100
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85n60co-264e72873id100+2 | |
47N60C
Abstract: 47n60 power mosfet 350v 30a to 247 UPS SIEMENS E72873 ID100
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47n60co-247e72873id100+4 | |
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Contextual Info: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 85 A RDS on) max = 36 m Low RDSon, high VDSS Superjunction MOSFET D TO-264 G G D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C EAS |
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85n60co-264e72873id100+1 | |
40N60C
Abstract: CoolMOS E72873 Ixkn 40n60 E72873 SOT-227
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40n60cot-227e72873coolmos+3 | |
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Contextual Info: IXKN 40N60C COOLMOS * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ D G S S miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C |
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40n60cot-227e72873 | |
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20n60cContextual Info: IXKC 20N60C CoolMOS Power MOSFET VDSS = 600 V ID25 = 15 A RDS on max = 190 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features |
Original |
20n60cisoplus220tme72873 | |
25N80C
Abstract: 25n80 E72873 mosfet b4
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25n80cisoplus220e7287320080526a+2 | |
20N60CContextual Info: IXKC 20N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 15 A RDS on) max = 190 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 |
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20n60cisoplus220tme7287320080523a | |
25n8Contextual Info: IXKC 25N80C CoolMOS 1 Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on) max = 150 m N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220 G G D fl S S isolated back surface E72873 Features |
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25n80cisoplus220e728730080526a+2 | |
20N60C
Abstract: IXKC 20n60c
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20n60cisoplus220tme72873ixkc 20n60c | |
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Contextual Info: IXKC 40N60C CoolMOS Power MOSFET VDSS = 600 V ID25 = 28 A RDS on max = 95 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features |
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40n60cisoplus220tme72873 | |
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Contextual Info: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features |
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40n60cisoplus220tme7287320080523a | |
40n60c
Abstract: mosfet 4800 E72873
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40n60cisoplus220tme7287320080523a+1 | |
fast diode SOT-227
Abstract: 40N60C E72873 MOSFET 031
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40n60cot-227e72873mounti193+2 | |
20n60c
Abstract: IXKC 20n60c E72873 A8711
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Original |
20n60cisoplus220tme7287320080523a+2 | |