MOSFET 740 Search Results

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

irf 540 mosfet

Abstract: ls 7400 PD908 014 IR MOSFET Transistor IRFM064
Contextual Info: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

irf 540 mosfet

Abstract: IRFM064
Contextual Info: PD - 90875A POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

utc 324

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.

C4125

Abstract: single gate "Shottky" Schottky Diode 40V 6A
Contextual Info: SEMICONDUCTOR KMB6D0NS30QA TECHNICAL DATA N-Ch MOSFET+SBD GENERAL DESCRIPTION This trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. The MOSFET and Schottky diode are isolated inside the

AN569

Abstract: MTW24N40E mosfet transistor 400 volts.100 amperes
Contextual Info: MTW24N40E Preferred Device Power MOSFET 24 Amps, 400 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary URFP064 Power MOSFET 70A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC URFP064 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance and high switching

Contextual Info: FQP9N30 N-Channel QFET MOSFET 300 V, 9.0 A, 450 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce

25N80C

Contextual Info: IXKC 25N80C COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 25 A VDSS = 800 V RDS on max = 150 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features MOSFET Symbol Conditions

Contextual Info: PD - 96343B AUTOMOTIVE MOSFET AUIRF7343Q HEXFET Power MOSFET Features l l l l l l l l Advanced Planar Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified*

IRF P CHANNEL MOSFET

Abstract: MOSFET 150 N IRF IRF7343QPBF B9 mosfet datasheet
Contextual Info: PD - 96110 IRF7343QPBF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free HEXFET Power MOSFET S1 N-CHANNEL MOSFET

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the

4N90

Abstract: mosfet 740 4n90 MOSFEt
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the

mosfet 740

Abstract: 4n90
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N90 Preliminary Power MOSFET 4 Amps, 900 Volts N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the

Contextual Info: MOSFET IC SMD Type N-Channel MOSFET KRLML2502 SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 Features 1 Available in Tape and Reel 0.55 Low Profile <1.1mm +0.2 1.6 -0.1 +0.2 2.8-0.2 N-Channel MOSFET 0.4 3 Ultra Low On-Resistance 2 +0.1 0.95-0.1 +0.2 1.9-0.2

2SK1946-01MR

Contextual Info: 2SK1946-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof TO-220F15 Applications Motor controllers

2SK3530

Abstract: 2SK3530-01MR DSA00259476
Contextual Info: 2SK3530-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

AO4468

Contextual Info: AO4468 30V N-Channel MOSFET General Description Product Summary The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

2SK3771-01MR

Abstract: 2SK3771
Contextual Info: 2SK3771-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200407 TO-220F FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators

2SK3530

Abstract: 2SK3530-01MR power mosfet 600v
Contextual Info: 2SK3530-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

FDMW2512NZ

Contextual Info: FDMW2512NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS ON @ VGS = 2.5v on

CMAC

Contextual Info: PRELIMINARY SPECIFICATION CM2002-800 Product Description High Linearity MOSFET Quad Mixer For GSM800 and Cellular BTS The CM2002-800 is a high linearity, passive MOSFET Quad Mixer Features for GSM800 and Cellular Base Station Receivers, exhibiting high •

AON7404

Contextual Info: AON7404 20V N-Channel MOSFET General Description Product Summary The AON7404 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

AO4402L

Contextual Info: AO4402L 20V N-Channel MOSFET General Description Product Summary The AO4402L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.