MOSFET 620 Search Results

Contextual Info: FQP9P25 P-Channel QFET MOSFET -250 V, -9.4 A, 620 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: N-Channel SuperFET II FRFET® MOSFET 600 V, 7.3 A, 620 m Features Description ® ® SuperFET II FRFET MOSFET is Fairchild’s brand-new high voltage super-junction MOSFET, utilizes advanced charge-balance technology for outstandingly low on-state resistance and

fqa9p25

Contextual Info: FQA9P25 P-Channel QFET MOSFET - 250 V, -10.5 A, 620 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: FCD620N60ZF N-Channel SuperFET II FRFET® MOSFET 600 V, 7.3 A, 620 mΩ Features Description o SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

Contextual Info: FQPF9P25 P-Channel QFET MOSFET -250 V, -6 A, 620 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

mosfet 1200V

Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V

irf 540 mosfet

Abstract: ls 7400 PD908 014 IR MOSFET Transistor IRFM064
Contextual Info: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

irf 540 mosfet

Abstract: IRFM064
Contextual Info: PD - 90875A POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.017 Ω IRFM064 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

CMF20120D

Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
Contextual Info: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode

lm2725

Abstract: LM2725MX LM2725M LM2726 LM2726M LM2726MX
Contextual Info: LM2725/LM2726 High Speed Synchronous MOSFET Drivers General Description The LM2725/LM2726 is a family of dual MOSFET drivers that can drive both the top MOSFET and bottom MOSFET in a push-pull structure simultaneously. It takes a logic level PWM input and splits it into two complimentary signals with

TA-3101

Contextual Info: CPH5803 Ordering number : ENN6935A CPH5803 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-Channel Sillicon MOSFET MCH3405 and a Schottky Barrier Diode (SBS004M)

mch3412

Abstract: ta3173 DIODE MARKING 3173 TA-317
Contextual Info: Ordering number : ENN6981 CPH5805 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5805 DC / DC Converter Applications Features Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm MCH3412 and a Schottky Barrier Diode (SBS006)

SCH2819

Abstract: SCH1419
Contextual Info: SCH2819 Ordering number : ENN8291 SCH2819 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET SCH1419 and a Schottky Barrier Diode (SS0503)

SCH1412

Abstract: SCH2808
Contextual Info: SCH2808 Ordering number : ENN8360 SCH2808 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel sillicon MOSFET SCH1412 and a schottky barrier diode (SS0503)

MTY25N60E

Abstract: AN569 TL 188 TRANSISTOR PIN DIAGRAM
Contextual Info: MTY25N60E Preferred Device Power MOSFET 25 Amps, 600 Volts N−Channel TO−264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

Contextual Info: Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions Composite type with a P-Channel Sillicon MOSFET unit : mm MCH3312 and a Schottky Barrier Diode (SBS006M) 2171

high-speed power mosfet 2Mhz

Abstract: LM27212 5Vto28V
Contextual Info: LM27222 LM27222 High-Speed 4.5A Synchronous MOSFET Driver Literature Number: SNVS306A LM27222 High-Speed 4.5A Synchronous MOSFET Driver General Description Features The LM27222 is a dual N-channel MOSFET driver designed to drive MOSFETs in push-pull configurations as typically

MTY25N60E

Abstract: AN569
Contextual Info: MTY25N60E Preferred Device Power MOSFET 25 Amps, 600 Volts N–Channel TO–264 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is

CPH5803

Abstract: MCH3405 SBS004M EN693
Contextual Info: CPH5803 Ordering number : EN6935B SANYO Semiconductors DATA SHEET CPH5803 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-Channel Sillicon MOSFET MCH3405 and a Schottky Barrier Diode (SBS004M)

40N60C

Abstract: ISOPLUS247
Contextual Info: Advanced Technical Information CoolMOS Power MOSFET in ISOPLUS247TM Package IXKR 40N60C VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247TM E153432 MOSFET Symbol

LTC1422

Abstract: 18v to 3.3v converter 2a 2410* mosfet
Contextual Info: = !"#$% &' ! 272 Vladimir Ostrerov !"#$%&'"(# *+,-./01 !"#$%&'()*+,-./0123 !"#$%&'()$*+,-./01 !"#$ %&'()*+,-#('. !"#$%&'()*+,-./0123 !"#$%&'()*+,-./01= 5 !"#$ =1 !"#$%&'()*+,-./"0 !"#$%&'(N MOSFET !" !"#$%&M O S F E T !"#$% !"#$%&'()*+,- .(/01 MOSFET !"#$%&'()*+,!"#$=2=

FN6494

Abstract: cgs resistor ISL6620 ISL6620A ISL6620CBZ MO-220 TB363 TB417 VR11 620Z
Contextual Info: ISL6620, ISL6620A Data Sheet April 25, 2008 VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers FN6494.0 Features • Dual MOSFET Drives for Synchronous Rectified Bridge The ISL6620, ISL6620A is a high frequency MOSFET driver designed to drive upper and lower power N-Channel

Contextual Info: ISL6620, ISL6620A Data Sheet April 25, 2008 VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers FN6494.0 Features • Dual MOSFET Drives for Synchronous Rectified Bridge The ISL6620, ISL6620A is a high frequency MOSFET driver designed to drive upper and lower power N-Channel