SI4874 Search Results
SI4874 Datasheets (10)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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Si4874BDY | Vishay Siliconix | Specification Comparison | Original | 49.18KB | 1 | ||
Si4874BDY | Vishay Telefunken | N-channel 30-v Mosfet | Original | 53.35KB | 5 | ||
SI4874BDY-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A 8-SOIC | Original | 9 | |||
SI4874BDY-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A 8-SOIC | Original | 9 | |||
SI4874DY |
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Single N-Channel, Logic Level, PowerTrench MOSFET | Original | 91.42KB | 5 | ||
SI4874DY | Unknown | N-Channel Reduced Qg , Fast Switching MOSFET | Original | 55.37KB | 4 | ||
SI4874DY | Vishay Intertechnology | N-Channel Reduced Qg, Fast Switching MOSFET | Original | 28.71KB | 3 | ||
Si4874DY | Vishay Telefunken | N-Channel 30-V MOSFET | Original | 53.35KB | 5 | ||
Si4874DY SPICE Device Model |
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N-Channel Reduced Qg, Fast Switching MOSFET | Original | 191.15KB | 3 | ||
SI4874DY-T1 | Vishay Intertechnology | N-Channel Reduced Qg, Fast Switching MOSFET | Original | 28.71KB | 3 |
SI4874 Price and Stock
Vishay Siliconix SI4874BDY-T1-E3MOSFET N-CH 30V 12A 8SO |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4874BDY-T1-E3 | Digi-Reel | 5,736 | 1 |
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Vishay Siliconix SI4874BDY-T1-GE3MOSFET N-CH 30V 12A 8SO |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4874BDY-T1-GE3 | Reel | 2,500 |
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SI4874BDY-T1-GE3 | 2,500 | 1 |
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Vishay Intertechnologies SI4874BDY-T1-E3Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4874BDY-T1-E3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4874BDY-T1-E3 | Reel | 32 Weeks | 2,500 |
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SI4874BDY-T1-E3 | 3,220 |
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SI4874BDY-T1-E3 | 860 | 69 |
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SI4874BDY-T1-E3 | Cut Tape | 2,500 |
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SI4874BDY-T1-E3 | 2,225 |
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SI4874BDY-T1-E3 | 1,678 |
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SI4874BDY-T1-E3 | Reel | 2,500 |
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SI4874BDY-T1-E3 | Cut Tape | 860 | 0 Weeks, 1 Days | 1 |
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SI4874BDY-T1-E3 | 33 Weeks | 2,500 |
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Vishay Intertechnologies SI4874BDY-T1-GE3- Tape and Reel (Alt: SI4874BDY-T1-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4874BDY-T1-GE3 | Reel | 32 Weeks | 2,500 |
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SI4874BDY-T1-GE3 |
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SI4874BDY-T1-GE3 | 2,500 | 3 |
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SI4874BDY-T1-GE3 | 2,000 |
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SI4874BDY-T1-GE3 | Reel | 2,500 |
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SI4874BDY-T1-GE3 | 33 Weeks | 1 |
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Fairchild Semiconductor Corporation SI4874DY |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4874DY | 2,500 | 3 |
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SI4874DY | 2,000 |
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SI4874 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Si4874BDY
Abstract: SI4874BDY-E3
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Si4874BDY Si4874BDY--E3 Si4874BDY-T1--E3 08-Apr-05 SI4874BDY-E3 | |
SI4874BDY
Abstract: Si4874BDY-T1-E3 Si4874DY Si4874DY-T1 V4140
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Si4874BDY Si4874DY Si4874BDY-T1-E3 Si4874DY-T1-E3 Si4874DY-T1 V4140 | |
Contextual Info: Si4874BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.0085 at VGS = 4.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested |
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Si4874BDY Si4874BDY-T1-E3 Si4874BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si4874BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.0085 at VGS = 4.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested |
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Si4874BDY Si4874BDY-T1-E3 Si4874BDY-T1-GE3 11-Mar-11 | |
Si4874DYContextual Info: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4874DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS |
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Si4874DY 18-Jul-08 | |
Si4874DYContextual Info: Si4874DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V "15 0.010 @ VGS = 4.5 V "13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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Si4874DY 18-Jul-08 | |
Si4874BDYContextual Info: Si4874BDY New Product Vishay Siliconix N-Channel 30-V MOSFET PRODUCT SUMMARY VDS V 30 FEATURES rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.0085 @ VGS = 4.5 V 14 D TrenchFETr Power MOSFETS D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View |
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Si4874BDY Si4874BDY--E3 Si4874BDY-T1--E3 S-41508--Rev. 09-Aug-04 | |
Si4874BDY
Abstract: Si4874BDY-T1-E3
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Si4874BDY Si4874BDY-T1-E3 08-Apr-05 | |
Si4874DY
Abstract: s9904
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Si4874DY S99-040--Rev. 04-Oct-99 s9904 | |
Contextual Info: Si4874BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.0085 at VGS = 4.5 V 14 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested |
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Si4874BDY Si4874BDY-T1-E3 Si4874BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si4874DY
Abstract: 71469
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Si4874DY 17-Apr-01 71469 | |
40685
Abstract: A 69234 AN609 Si4874BDY
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Si4874BDY AN609 26-Jul-07 40685 A 69234 | |
Si4874BDY
Abstract: Si4874BDY-T1-E3 Si4874DY Si4874DY-T1
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Si4874BDY Si4874DY Si4874BDY-T1-E3 Si4874DY-T1-E3 Si4874BDY-T1 Si4874DY-T1 | |
Si4874DY
Abstract: SOIC-16
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Si4874DY SOIC-16 | |
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Contextual Info: January 2001 Si4874DY Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize |
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Si4874DY OT-23 | |
Contextual Info: New Product Si4874BDY Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS V rDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.0085 at VGS = 4.5 V 14 • TrenchFET Power MOSFETS • 100 % Rg Tested RoHS COMPLIANT D SO-8 S 1 8 D S 2 7 D S 3 |
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Si4874BDY Si4874BDY-T1-E3 18-Jul-08 | |
Si4874BDYContextual Info: SPICE Device Model Si4874BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si4874BDY S-60245Rev. 20-Feb-06 | |
Contextual Info: Si4874DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V "15 0.010 @ VGS = 4.5 V "13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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Si4874DY S99-040--Rev. 04-Oct-99 | |
SI4874BDYContextual Info: SPICE Device Model Si4874BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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Si4874BDY 18-Jul-08 | |
Si4874BDY
Abstract: Si4874BDY-T1-E3 Si4874BDY-T1-GE3
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Si4874BDY Si4874BDY-T1-E3 Si4874BDY-T1-GE3 18-Jul-08 | |
Contextual Info: Si4874DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V "15 0.010 @ VGS = 4.5 V "13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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Si4874DY S-61803--Rev. 21-Jun-99 | |
Contextual Info: Si4874DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V "15 0.010 @ VGS = 4.5 V "13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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Si4874DY 08-Apr-05 | |
Contextual Info: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC |
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Si7456DP Si7456DP-T1-E3 Si7456DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive |
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Si7846DP Si7846DP-T1-E3 Si7846DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 |