MOSFET 60A Search Results

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT60N03 Power MOSFET 30V, 60A N-CHANNEL LOGIC LEVEL MOSFET 1 „ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the

SPM6M080-010D

Abstract: SPM6M060-025D 010D
Contextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D SPM6M060-025D TECHNICAL DATA Datasheet 4118, Rev. E Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 V/ 80 AMP, 250V/60A THREE PHASE MOSFET BRIDGE Tj=25 C UNLESS OTHERWISE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE

SPM6M080-010D

Contextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D SPM6M060-025D TECHNICAL DATA Datasheet 4118, Rev. F Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 V/ 80 AMP, 250V/60A THREE PHASE MOSFET BRIDGE Tj=25 C UNLESS OTHERWISE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT60N05 Power MOSFET 60A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR „ DESCRIPTION The UTC UTT60N05 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT60N10 Power MOSFET 60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR „ DESCRIPTION The UTC UTT60N10 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT60N10 Power MOSFET 60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR  DESCRIPTION The UTC UTT60N10 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current

60n05

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 60N05 Preliminary Power MOSFET 60A, 50V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 60N05 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate charge.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50P04 Power MOSFET -40V, -60A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT50P04 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 60N15 Preliminary Power MOSFET 60A, 150V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 60N15 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate charge.

BUZ11

Abstract: buz11 application note BUZ1 TB334 TA9771
Contextual Info: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features

Contextual Info: AOT502 Clamped N-Channel MOSFET General Description Product Summary AOT502 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.

AOT502

Abstract: gate-drain zener 50E05 102-AX
Contextual Info: AOT502 Clamped N-Channel MOSFET General Description Product Summary AOT502 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.

Contextual Info: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features

Contextual Info: Preliminary – Subject to change without notice 40V N-channel Trench MOSFET 40V, 60A, 8.5mΩ General Description Features The MDD1751 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.

Mosfet

Abstract: SSFM2506
Contextual Info: SSFM2506 25V N-Channel MOSFET Main Product Characteristics: VDSS 25V RDS on 4.1mohm(typ.) ID 60A Marking and pin Features and Benefits:   Schematic diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and

Contextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. D Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE

SPM6M080-010D

Contextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. C Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE

Contextual Info: SENSITRON SEMICONDUCTOR SHD226701 TECHNICAL DATA DATA SHEET 4188, REV. - LOW RDS on HERMETIC POWER MOSFET - N-CHANNEL FEATURES: • 100 Volt, 0.022 Ohm, 60A MOSFET • Isolated Hermetic Metal Package • Ultra Low RDS (on) • Characterised at VGS of 4.5V

100V 60A Mosfet

Abstract: SHD226701
Contextual Info: SENSITRON SEMICONDUCTOR SHD226701 TECHNICAL DATA DATA SHEET 4188, REV. - LOW RDS on HERMETIC POWER MOSFET - N-CHANNEL FEATURES: • 100 Volt, 0.022 Ohm, 60A MOSFET • Isolated Hermetic Metal Package • Ultra Low RDS (on) • Characterised at VGS of 4.5V

Contextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA DATA SHEET 4118, REV A Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE

Contextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. B Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE

Contextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. B Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE

LIN opto isolator

Abstract: SPM6M080-010D 210C DS34C87 SFH6186-4
Contextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. D.1 Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE