010D Search Results
010D Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 20021221-00010D1LF |
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Minitek127®, Wire to Board connector, Shrouded vertical header, Surface Mount, Double Row, 10 Positions, 1.27mm (0.500in) Pitch. | |||
| 20021122-00010D8LF |
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Minitek127® 1.27mm, Board To Board, Unshrouded header, Surface Mount, 10 contacts. | |||
| 20021621-00010D8LF |
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1.27mm (0.05in.) pitch, Header with eject latch, 10 contacts | |||
| 20021321-00010D8LF |
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Minitek127®, Board to Board connectors, PCB mounted Receptacle, Vertical, Surface Mount, Double Row, 10 Positions, 1.27mm (0.05inch) pitch | |||
| 467-5010-D63 |
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VHDM-HSD™, Backplane connectors, Vertical Orientation, Press Fit Termination, 5 Row HSD, 10 positions, right, D-Key, 4.25mm (0.167in), Header. |
010D Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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AD-CJ13-320001010D05
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JCET Group | SMD3225 32MHz quartz crystal resonator with 10pF load capacitance, ±10ppm frequency tolerance, ±100ppm temperature stability, fundamental mode, AEC-Q200 qualified, operating temperature -40 to +125°C. | Original | ||||
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G1010DS
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AK Semiconductor | Surface mount silicon rectifier in TO-252 package with reverse voltage ratings from 100 to 1000 V, 10 A forward current, low forward voltage drop, glass passivated junction, and operating temperature up to 150 °C. | Original | ||||
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MSK4010D
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Shikues Semiconductor | Schottky Barrier Diodes, AEC-Q101 Qualified, RoHS compliant, SOD-882 package. | Original | ||||
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JMTQ3010D
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 22A dual N-channel enhancement mode power MOSFET in PDFN3x3-8L-D package with RDS(ON) less than 13.5mΩ at VGS=10V and low gate charge, suitable for load switching, PWM, and power management applications. | Original | ||||
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GPI65010DF56
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GaNPower | N-channel 650V 10A GaN Power HEMT in 5x6 DFN package with 120 mΩ RDS(on), 2.6 nC gate charge, and zero reverse recovery charge, designed for high-frequency switching applications requiring high power density and efficiency. | Original | ||||
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US1010DS
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AK Semiconductor | Surface mount ultrafast recovery rectifier in TO-252 package with reverse voltage ratings from 100V to 1000V, 10A forward current, low forward voltage drop, and 50 to 75ns reverse recovery time.Surface Mount Ultrafast Recovery Rectifier in TO-252(D-PAK), 10A forward current, 100 to 1000V reverse voltage, 50-75ns reverse recovery time, low forward voltage drop, high surge capability, lead-free.Surface Mount Ultrafast Recovery Rectifier in TO-252(D-PAK), 100 to 1000V reverse voltage, 10A forward current, 50-75ns reverse recovery time, 0.95-1.65V forward voltage at 10A, -55 to +150°C operating temperature. | Original | ||||
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JMTP3010D
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Jiangsu JieJie Microelectronics Co Ltd | Dual N-channel enhancement mode power MOSFET in SOP-8 package, 30V, 12A, with RDS(ON) less than 11.6mΩ at VGS=10V and low gate charge, suitable for load switch, PWM, and power management applications. | Original |
010D Price and Stock
Texas Instruments TPA2010D1YZFRIC AMP CLASS D MONO 2.5W 9DSBGA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TPA2010D1YZFR | Cut Tape | 4,490 | 1 |
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Buy Now | |||||
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TPA2010D1YZFR | 243,328 |
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Get Quote | |||||||
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TPA2010D1YZFR | 6,000 |
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Get Quote | |||||||
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TPA2010D1YZFR | 27,800 |
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onsemi NV25010DTHFT3GIC EEPROM 1KBIT SPI 10MHZ 8TSSOP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NV25010DTHFT3G | Tape & Reel | 3,000 | 3,000 |
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Buy Now | |||||
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NV25010DTHFT3G | 2,995 | 1 |
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Buy Now | ||||||
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NV25010DTHFT3G | 3,000 |
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Get Quote | |||||||
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NV25010DTHFT3G | 303,000 |
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Get Quote | |||||||
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NV25010DTHFT3G |
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Buy Now | ||||||||
Texas Instruments BQ24010DRCRIC BATT CHG LI-ION 1CELL 10VSON |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BQ24010DRCR | Digi-Reel | 2,913 | 1 |
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BQ24010DRCR | 4 | 2 |
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BQ24010DRCR | 2,943 | 1 |
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Buy Now | ||||||
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BQ24010DRCR | 2,905 |
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Get Quote | |||||||
Amphenol Communications Solutions 20021323-00010D1LFCONN RCPT 10POS 0.05 GOLD SMD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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20021323-00010D1LF | Tube | 2,097 | 1 |
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20021323-00010D1LF | 6,803 |
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Get Quote | |||||||
ROHM Semiconductor SML-010DTT86LED ORANGE CLEAR 3020 SMD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SML-010DTT86 | Cut Tape | 1,727 | 1 |
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Buy Now | |||||
010D Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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4096 IC 14 pinsContextual Info: SPM6M060-010D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4096, Rev A Three-Phase MOSFET Bridge, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 60 AMP, THREE PHASE MOSFET BRIDGE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED |
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SPM6M060-010D /-20V 125oC 4096 IC 14 pins | |
4096 IC 14 pins
Abstract: IC 4096
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SPM6M060-010D /-20V 125oC 4096 IC 14 pins IC 4096 | |
SPM6M080-010DContextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. C Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE |
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SPM6M080-010D /-20V SPM6M080-010D | |
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Contextual Info: Accessories FTDR 010D020 Photoelectric reflectors dimension drawing general data excess gain diagram width / diameter active range 10 mm retro-reflective sensor no retro-reflective laser sensor yes line sensor no structure glass bowls cut goods no mechanical data |
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010D020 | |
mosfet amp ic
Abstract: SPM6M060-010D
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SPM6M060-010D /-20V mosfet amp ic SPM6M060-010D | |
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Contextual Info: Accessories FTDR 010D020 Photoelectric reflectors dimension drawing general data excess gain diagram width / diameter active range 10 mm retro-reflective sensor no retro-reflective laser sensor yes line sensor no structure glass bowls cut goods no mechanical data |
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010D020 | |
SML-010DT
Abstract: SML-010LT SML-010MT SML-010PT SML-010VT SML-010YT SML-010
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SML-010 555nm 570nm 585nm 610nm 650nm 660nm SML-010PT SML-010MT SML-010YT SML-010DT SML-010LT SML-010MT SML-010PT SML-010VT SML-010YT | |
r125 410
Abstract: 011D 01-1D
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Contextual Info: SMD LED Product Data Sheet LTW-010DCG-S1 Spec No.: DS22-2011-0343 Effective Date: 09/18/2013 Revision: A LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C. Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660 |
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LTW-010DCG-S1 DS22-2011-0343 BNS-OD-FC001/A4 EIA-471 BNS-OD-C131/A4 | |
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Contextual Info: SMD Lamp LTW-010DCG5 1. Description The LTW LiteOn White LED is a revolutionary, energy efficient and ultra compact new light source, combining the lifetime and reliability advantages of Light Emitting Diodes with the brightness of conventional lighting. It gives you total design freedom and |
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LTW-010DCG5 EIA-471 BNS-OD-FC002/A4 | |
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Contextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. B Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE |
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SPM6M080-010D /-20V 125oC | |
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Contextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. B Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE |
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SPM6M080-010D /-20V 125oC | |
LIN opto isolator
Abstract: SPM6M080-010D 210C DS34C87 SFH6186-4
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SPM6M080-010D LIN opto isolator SPM6M080-010D 210C DS34C87 SFH6186-4 | |
SML-010Contextual Info: SURFACE MOUNT LED LAMPS Standard Type Chip LEDs with reflector SML-010 Series Green Pure Green Package Size （mm） Yellow Orange Red GaAsP on GaP GaP GaAlAs on GaAs 555nm 570nm 585nm 610nm 650nm 660nm SML-010PT SML-010MT SML-010YT SML-010DT SML-010VT SML-010LT |
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SML010 555nm 570nm 585nm 610nm 650nm 660nm SML-010PT SML-010MT SML-010YT SML-010 | |
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SPM6M050-010DContextual Info: SPM6M050-010D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1161, REV. PRELIMINARY A Three-Phase MOSFET BRIDGE, 100 VOLT, 50 AMP ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED MOSFET Characteristics CHARACTERISTIC SYMBOL |
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SPM6M050-010D SPM6M050-010D | |
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Contextual Info: Accessories FTDR 010D020 Photoelectric reflectors dimension drawing general data excess gain diagram width / diameter active range 10 mm retro-reflective sensor no retro-reflective laser sensor yes line sensor no structure glass bowls cut goods no mechanical data |
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010D020 | |
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Contextual Info: Accessories FTDR 010D020 Photoelectric reflectors dimension drawing general data excess gain diagram width / diameter active range 10 mm retro-reflective sensor no retro-reflective laser sensor yes line sensor no structure glass bowls cut goods no mechanical data |
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010D020 | |
SPM6M080-010D-B
Abstract: 210C DS34C87 SFH6186-4 SPM6M080-010D IN 4118 low side pwm drive optocoupler high side MOSFET G 15 Amp 100 volt mosfet BTEMP
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SPM6M080-010D SPM6M080-010D-B 210C DS34C87 SFH6186-4 SPM6M080-010D IN 4118 low side pwm drive optocoupler high side MOSFET G 15 Amp 100 volt mosfet BTEMP | |
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Contextual Info: SMD LED Product Data Sheet LTW-010DCG Spec No.: DS22-2010-0013 Effective Date: 09/18/2013 Revision: C LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C. Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660 |
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LTW-010DCG DS22-2010-0013 BNS-OD-FC001/A4 EIA-471 BNS-OD-C131/A4 | |
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Contextual Info: SMD LED Product Data Sheet LTW-010DCG-HPL Spec No.: DS22-2013-0210 Effective Date: 09/13/2013 Revision: - LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C. Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660 |
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LTW-010DCG-HPL DS22-2013-0210 BNS-OD-FC001/A4 EIA-471 BNS-OD-C131/A4 | |
U 806 DIContextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA DATA SHEET 4118, REV. - Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE |
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SPM6M080-010D U 806 DI | |
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Contextual Info: tSENSITRON SPM6M050-010D SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1161, REV. PRELIMINARY Three-Phase MOSFET BRIDGE, 100 VOLT, 50 AMP ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE Tj=250C UNLESS OTHERWISE SPECIFIED MOSFET Characteristics CHARACTERISTIC SYMBOL |
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SPM6M050-010D | |
SPM6M080-010D
Abstract: SPM6M060-025D 010D
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SPM6M080-010D SPM6M060-025D 50V/60A SPM6M080-010D SPM6M060-025D 010D | |
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Contextual Info: Application Note RINGLICHT-CLS49 Application Note Ausgabe Januar 2002 PHYTEC Technologie Holding AG 2002 Europe: Support Hotline: +49 6131 9221-31 http://www.phytec.de North America: Support Hotline: + 1-800-278-9913 http://www.phytec.com LAN-010d_1 |
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RINGLICHT-CLS49 LAN-010d D-55135 | |