MOSFET 600V 3A Search Results

FQP3N60C

Abstract: mosfet 600V 100A
Contextual Info: TM QFET FQP3N60C 600V N-Channel MOSFET Features Description • 3A, 600V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQB3N60C

Abstract: FQB3N60CTM mosfet 600V 3A
Contextual Info: TM QFET FQB3N60C 600V N-Channel MOSFET Features Description • 3A, 600V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

3N60

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60K Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

Contextual Info: TM QFET FQP3N60C 600V N-Channel MOSFET Features Description • 3A, 600V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

3N60

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60A Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high

FQB3N60C

Abstract: FQB3N60CTM 3A, 50V BRIDGE
Contextual Info: QFET TM FQB3N60C 600V N-Channel MOSFET Features Description • 3A, 600V, RDS on = 3.4Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

3N60Z

Abstract: 3N60ZG-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60Z Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 3N60Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60K Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N60K is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

RG 2006 10A 600V

Abstract: FQU3N60C FQU3N60CTU FQD3N60C FQD3N60CTF FQD3N60CTM
Contextual Info: QFET FQD3N60C / FQU3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: STD3NM60 STD3NM60-1 N-CHANNEL 600V - 1.4Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TARGET DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD3NM60 600V < 1.6 Ω 3A TYPICAL RDS(on) = 1.4 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

Contextual Info: STD3NM60 STD3NM60-1 N-CHANNEL 600V - 1.4Ω - 3A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TARGET DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD3NM60 600V < 1.6 Ω 3A TYPICAL RDS(on) = 1.4 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

2S400

Abstract: stp3nc60fp STP3NC60
Contextual Info: STP3NC60 STP3NC60FP N-CHANNEL 600V - 3.3Ω - 3A TO-220/TO-220FP PowerMesh II MOSFET TYPE VDSS RDS on ID STP3NC60 600 V < 3.6 Ω 3A STP3NC60FP 600V < 3.6 Ω 3A TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK

STP3NC60FP

Abstract: STP3NC60 STP3NC60 MOSFET
Contextual Info: STP3NC60 STP3NC60FP N-CHANNEL 600V - 3.3Ω - 3A TO-220/TO-220FP PowerMesh II MOSFET TYPE VDSS RDS on ID STP3NC60 600 V < 3.6 Ω 3A STP3NC60FP 600V < 3.6 Ω 3A • ■ ■ ■ ■ TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60K-MT Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N60K-MT is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPL60R650P6S DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPL60R650P6S 1Description ThinPAK5x6

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPx60R600P6 DataSheet Rev.2.1 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPP60R600P6,IPA60R600P6,IPD60R600P6 1Description

STP3NC60

Abstract: STP3NC60FP
Contextual Info: STP3NC60 STP3NC60FP N-CHANNEL 600V - 3.3Ω - 3A TO-220/TO-220FP PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP3NC60 600 V <3.6 Ω 3A STP3NC60FP 600V <3.6 Ω 2A TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: KSM3N60C 600V N-Channel MOSFET TO-220 Features • 3A, 600V, RDS on = 3.4Ω @VGS = 10 V • Low gate charge ( typical 10.5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect

STD2NC60

Contextual Info: STD2NC60 N-CHANNEL 600V - 3.3Ω - 2A DPAK / IPAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STD2NC60 600V < 3.6Ω 2A TYPICAL RDS(on) = 3.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

STD2NC60

Contextual Info: STD2NC60 N-CHANNEL 600V - 3.3Ω - 2A DPAK / IPAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STD2NC60 600V < 3.6Ω 2A TYPICAL RDS(on) = 3.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

FQD3N60C

Abstract: FQD3N60CTF FQD3N60CTM
Contextual Info: TM QFET FQD3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

zener diode 4.7 v

Contextual Info: STP4NM60 N-CHANNEL 600V - 1.4Ω - 4A TO-220 Zener-Protected MDmesh Power MOSFET TARGET DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STP4NM60 600V < 1.6 Ω 4A TYPICAL RDS(on) = 1.4 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY