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3N60A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
3N60-A-TA3-T		Unisonic Technologies	3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF	162.32KB	8

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Vishay Siliconix SIHG73N60AE-GE3 MOSFET N-CH 600V 60A TO247AC
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DigiKey	SIHG73N60AE-GE3	Tube	358		1	1 $6.33 10 $6.33 100 $6.16 1000 $5.74 10000 $5.74	Buy Now
onsemi HGTP3N60A4 IGBT 600V 17A TO-220-3
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Rochester Electronics LLC HGTP3N60A4 IGBT 600V 17A TO-220-3
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DigiKey	HGTP3N60A4	Tube			228	1 - 10 - 100 - 1000 $1.32 10000 $1.32	Buy Now
Rochester Electronics LLC HGTD3N60A4S IGBT 600V 17A TO-252
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Rochester Electronics LLC HGTP3N60A4D IGBT 600V 17A TO-220-3
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DigiKey	HGTP3N60A4D	Tube			185	1 - 10 - 100 - 1000 $1.62 10000 $1.62	Buy Now

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3N60A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
3N60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60A Power MOSFET 3A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high	Original	3N60A 3N60A QW-R502-610 3N60	PDF
3n60 MOSFEt Abstract: 3N60 TO-22F 3N60L 3N60B f3n60 3N60A PART NO Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	QW-R502-110 3n60 MOSFEt 3N60 TO-22F 3N60L 3N60B f3n60 3N60A PART NO	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	3N60L QW-R502-110	PDF
3N60A4D Abstract: 3n60a4 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D N-Channel mosfet 400v 25A Contextual Info: 3N60A4DS, 3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 3N60A4DS and the 3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices	Original	HGT1S3N60A4DS, HGTP3N60A4D HGT1S3N60A4DS HGTP3N60A4D 150oC. TA49327. TA49369. 3N60A4D 3n60a4 HGT1S3N60A4DS9A N-Channel mosfet 400v 25A	PDF
3n60a4 Abstract: BH Ra transistor equivalent 3N60A4 3N60A4 equivalent HGTD3N60A4S A9688 ice 265 vqe 24 e HGT1S3N60A4S HGT1S3N60A4S9A Contextual Info: 3N60A4S, 3N60A4S, 3N60A4 in te r r ii J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT 4825 Features The 3N60A4S, 3N60A4S and the 3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and	OCR Scan	HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 HGT1S3N60A4S HGTP3N60A4 TA49327. O-263AB O-263AB 330mm 3n60a4 BH Ra transistor equivalent 3N60A4 3N60A4 equivalent HGTD3N60A4S A9688 ice 265 vqe 24 e HGT1S3N60A4S9A	PDF
3n60a4 Abstract: 3N60 HGTD3N60A4S HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4 HGTP3N60A4D TB334 Contextual Info: 3N60A4S, 3N60A4S, 3N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The 3N60A4S, 3N60A4S and the 3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input	Original	HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 HGT1S3N60A4S HGTP3N60A4 150oC. 100kHz 3n60a4 3N60 HGTD3N60A4S HGT1S3N60A4S9A HGTP3N60A4D TB334	PDF
3n60 MOSFEt Abstract: 3N60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	O-220 O-220F O-252 QW-R502-110 3n60 MOSFEt 3N60	PDF
3n60a4d Abstract: HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 3n60 Contextual Info: 3N60A4DS, 3N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 3N60A4DS and the 3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices	Original	HGT1S3N60A4DS, HGTP3N60A4D HGT1S3N60A4DS HGTP3N60A4D 150oC. TA49327. TA49369. 3n60a4d HGT1S3N60A4DS9A 3n60	PDF
3N60 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	O-220 3N60L QW-R502-110 3N60	PDF
8N65 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 產品變更通知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices	Original	IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	3N60L QW-R502-110	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF
mm036 Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100 Contextual Info: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA	OCR Scan	DSAI35-12A 5-16A 5-18A 5-12A 2-06A 12-1OA 2-12A 2x30-Q4C mm036 ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100	PDF
3N60A4D Abstract: TA49369 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 5LEC A9688 Contextual Info: 3N60A4DS, 3N60A4D in t e r r i i J a n u a ry . D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 3N60A4DS and the 3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices	OCR Scan	HGT1S3N60A4DS HGTP3N60A4D TA49327. TA49369. 3N60A4D TA49369 HGT1S3N60A4DS9A 5LEC A9688	PDF

3N60A4 Abstract: HGTD3N60A4S HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4 TB334 Contextual Info: 3N60A4S, 3N60A4S, 3N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The 3N60A4S, 3N60A4S and the 3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input	Original	HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 HGT1S3N60A4S HGTP3N60A4 150oC. 100kHz 3N60A4 HGTD3N60A4S HGT1S3N60A4S9A TB334	PDF
3n60a4d Abstract: HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 3N60A4 Contextual Info: 3N60A4DS, 3N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 3N60A4DS and the 3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices	Original	HGT1S3N60A4DS, HGTP3N60A4D HGT1S3N60A4DS HGTP3N60A4D 150oC. TA49327. TA49369. 3n60a4d HGT1S3N60A4DS9A 3N60A4	PDF
3N60A4 Contextual Info: 3N60A4DS, 3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 3N60A4DS and the 3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices	Original	HGT1S3N60A4DS, HGTP3N60A4D HGT1S3N60A4DS HGTP3N60A4D 150oC. TA49327. TA49369. 3N60A4	PDF
3N60A4 Abstract: HGTP3N60A4 HGTD3N60A4S HGTP3N60A4D LD26 TB334 45A-150 Contextual Info: 3N60A4S, 3N60A4 Data Sheet August 2003 600V, SMPS Series N-Channel IGBT Features The 3N60A4S and the 3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	HGTD3N60A4S, HGTP3N60A4 HGTD3N60A4S HGTP3N60A4 150oC. 100kHz 200kHz 3N60A4 HGTP3N60A4D LD26 TB334 45A-150	PDF