FQD3N60CTF Search Results

FQD3N60CTF Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FQD3N60CTF		Fairchild Semiconductor	600V N-Channel MOSFET	Original	PDF	768.61KB	8

FQD3N60CTF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FQD3N60C / FQU3N60C N-Channel QFET MOSFET 600 V, 2.4 A, 3.4 Ω Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state	Original	FQD3N60C FQU3N60C FQU3N60C	PDF
FQD3N60C Abstract: FQD3N60CTF FQD3N60CTM Contextual Info: TM QFET FQD3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	FQD3N60C FQD3N60C FQD3N60CTF FQD3N60CTM	PDF
RG 2006 10A 600V Abstract: FQU3N60C FQU3N60CTU FQD3N60C FQD3N60CTF FQD3N60CTM Contextual Info: QFET FQD3N60C / FQU3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	FQD3N60C FQU3N60C FQU3N60C RG 2006 10A 600V FQU3N60CTU FQD3N60CTF FQD3N60CTM	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: FQD3N60C / FQU3N60C N-Channel QFET MOSFET 600 V, 2.4 A, 3.4 Ω Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Original

FQD3N60C FQU3N60C FQU3N60C

PDF

FQD3N60C

Abstract: FQD3N60CTF FQD3N60CTM
Contextual Info: TM QFET FQD3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Original

FQD3N60C FQD3N60C FQD3N60CTF FQD3N60CTM

PDF

RG 2006 10A 600V

Abstract: FQU3N60C FQU3N60CTU FQD3N60C FQD3N60CTF FQD3N60CTM
Contextual Info: QFET FQD3N60C / FQU3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Original

FQD3N60C FQU3N60C FQU3N60C RG 2006 10A 600V FQU3N60CTU FQD3N60CTF FQD3N60CTM

PDF