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    FQB3N60CTM Search Results

    FQB3N60CTM Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQB3N60CTM
    		Fairchild Semiconductor 600V N-Channel MOSFET Original PDF 767.21KB 8
    FQB3N60CTM
    		Fairchild Semiconductor 600V N-Channel MOSFET Original PDF 842.21KB 8
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    FQB3N60CTM Price and Stock

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    Rochester Electronics LLC FQB3N60CTM

    MOSFET N-CH 600V 3A D2PAK
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    DigiKey FQB3N60CTM Bulk 308
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    onsemi FQB3N60CTM

    Trans MOSFET N-CH 600V 3A 3-Pin(2+Tab) D2PAK T/R
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    Verical FQB3N60CTM 506 385
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    Fairchild Semiconductor Corporation FQB3N60CTM

    Power Field-Effect Transistor, 3A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    Rochester Electronics FQB3N60CTM 1,376 1
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    FQB3N60CTM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FQB3N60C

    Abstract: FQB3N60CTM 3A, 50V BRIDGE
    Contextual Info: QFET TM FQB3N60C 600V N-Channel MOSFET Features Description • 3A, 600V, RDS on = 3.4Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB3N60C FQB3N60C FQB3N60CTM 3A, 50V BRIDGE PDF

    FQB3N60C

    Abstract: FQB3N60CTM mosfet 600V 3A
    Contextual Info: TM QFET FQB3N60C 600V N-Channel MOSFET Features Description • 3A, 600V, RDS on = 3.4Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB3N60C FQB3N60C FQB3N60CTM mosfet 600V 3A PDF