MOSFET 40A 12V Search Results

sil 5102

Abstract: IRFP150 TB334
Contextual Info: IRFP150 Data Sheet May 2000 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator ()

irfp150

Contextual Info: IGNS DES W E N CT FOR PRODU D E D E MEN ITUT COM SUBST 0N E R NOT SSIBLE IRFP15 Data Sheet PO 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm,

irf150

Abstract: MOSFET IRF150 TA17421 TB334 circuits of IRF150 40A100V IRF-150
Contextual Info: IRF150 Data Sheet March 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET • 40A, 100V Formerly Developmental Type TA17421. Ordering Information PACKAGE 1824.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

sil 5102

Abstract: 150N IRFP150 TB334 PO40A
Contextual Info: [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator () /DOCI S N ESIG W D CT E N FOR ODU TM DED UTE PR N E STIT OMM REC LE SUB 150N

Contextual Info: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot

74HC125

Abstract: 2N3904 C28 BAT54A FDS6670A FDS7760A LTC1929 LTC1929-PG MBRS320T3 T510X477M006AS 16SP27OM
Contextual Info: = !"#$%&' =PolyPhase !J ! 234 Wei Chen !" ! !"# J ! !"#$%&'( *'+,-./01!"#$%&'()*+),-. /012 !"#$%&'()*+!"#$,-./0 = MOSFET !"#$%&'()&*+,!"#$%&'()*+,-./ 0123 !"#$%&'()*+,-./01234 ! LTC1929-PG !"#$ ( power good ) !"#$%&$'()*+,-.+/01$ ! ( ASIC ) !( 40A ) ! ( ≤6V )

2E12

Abstract: FRK9160D FRK9160H FRK9160R Rad Hard in Fairchild for MOSFET
Contextual Info: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

frk150

Abstract: 2E12 FRK150D FRK150H FRK150R Rad Hard in Fairchild for MOSFET
Contextual Info: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

2E12

Abstract: FRK9160D FRK9160H FRK9160R
Contextual Info: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 40A, 100V, RDS on = 0.055Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: FRK150D FRK150H FRK150R
Contextual Info: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: Enpirion Power Datasheet ET4040QI 40A Power Stage High Speed MOSFET with Integrated Current and Temperature Sense Description Features The ET4040QI is a 40A, high speed, high density, monolithic power stage IC with integrated sensing features in a 5.5mm x 7.5mm x 0.95mm, 46 pin QFN

mosfet SMD 6 PIN IC FOR PWM

Abstract: 210nH IR3553MTRPBF ir3550 IR3553
Contextual Info: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to 3.3V

Contextual Info: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to 3.3V

IRFPS37N50A

Abstract: IRFPS40N60K IR 224A
Contextual Info: PD - 94384A SMPS MOSFET IRFPS40N60K Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V

irfps40n60k

Abstract: IRFPS
Contextual Info: PD - 94384 SMPS MOSFET Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive IRFPS40N60K HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V

Contextual Info: IR3553 40A Integrated PowIRstage FEATURES DESCRIPTION • Peak efficiency up to 93.2% at 1.2V  Integrated driver, control MOSFET, synchronous MOSFET and Schottky diode  Input voltage VIN operating range up to 15V  Output voltage range from 0.25V up to (VCC - 2.5V)

IRFPS37N50A

Abstract: IRFPS40N60K
Contextual Info: PD - 94384A SMPS MOSFET IRFPS40N60K Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V

Contextual Info: PD - 94384A SMPS MOSFET IRFPS40N60K Applications l Hard Switching Primary or PFC Switch l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.110 Ω 40A 600V

4311 mosfet transistor

Abstract: tl 4311 transistor tl 4311 IRFP150 TB334 T2T-2
Contextual Info: IRFP150 Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

IRFP150

Abstract: 150N TB334
Contextual Info: S N ESIG W D CT E N FOR ODU DED UTE PR N E STIT OMM REC LE SUB 150N T O N FP SIB Data IR Sheet POS 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

Contextual Info: Preliminary Technical Information Linear L2TM Power MOSFET with extended FBSOA VDSS ID25 IXTH40N50L2 IXTQ40N50L2 IXTT40N50L2 = 500V = 40A ≤ 170mΩ Ω RDS on N-Channel Enhancement Mode Avalanche rated TO-247 Symbol Test Conditions VDSS TJ = 25°C to 150°C