MOSFET 25A 600V Search Results

30nm60

Abstract: 30nm60n
Contextual Info: STB30NM60N-STI30NM60N-STF30NM60N STP30NM60N-STW30NM60N N-channel 600V - 0.1Ω - 25A - TO-220/FP - TO-247 - D2/I2PAK second generation MDmesh Power MOSFET Preliminary Data Features Type VDSS RDS on Max ID PW STB30NM60N 600 V <0.13Ω 25A 190 W STI30NM60N

R6025FNZ1

Contextual Info: R6025FNZ1 Datasheet Nch 600V 25A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.18W ID 25A PD 150W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: R6025FNZ Nch 600V 25A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.18W ID 25A PD 150W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

FCH25N60

Abstract: FCH25N60N mosfet 600V 25A TO247s
Contextual Info: SupreMOS FCH25N60N TM tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS on = 0.108Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

FCH25N60N

Contextual Info: SupreMOS FCH25N60N TM tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS on = 0.108Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

FCP25N60N

Abstract: F102 DIODE 83A mosfet 600V 25A
Contextual Info: SupreMOS FCP25N60N_F102 TM tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

FCI25N60N

Abstract: mosfet 600V 25A
Contextual Info: SupreMOSTM FCI25N60N_F102 tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

Contextual Info: SupreMOS FCH25N60N tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS on = 0.108Ω ( Typ.) at VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

F30NM60ND

Abstract: 30NM60ND F30NM60ND-STW30NM60ND f30nm60 STB30NM60ND-STI30NM60ND STP30NM60ND STW30NM60ND STP30 30NM60N STF30NM60ND
Contextual Info: STP/F30NM60ND-STW30NM60ND STB30NM60ND-STI30NM60ND N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET with fast diode Preliminary Data Features Type VDSS RDS(on) Max ID STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND

Contextual Info: FZ06BIA070FS target datasheet DC Boost Application flowSOL 0 BI 600V/25A General conditions BOOST = = = = VGEon VGEoff Rgon Rgoff Figure 1. MOSFET Figure 2. Typical average static loss as a function of input current IiRMS Ploss=f Iin FRED Typical average static loss as a function of

Contextual Info: SupreMOSTM FCH25N60N tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior

schematic diagram UPS

Abstract: schematic diagram UPS 600 Power free STY25NA60
Contextual Info: STY25NA60 N - CHANNEL 600V - 0.225 Ω - 25A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET TYPE STY25NA60 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 600 V < 0.24 Ω 25 A TYPICAL RDS(on) = 0.225 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP

Contextual Info: R6025ANZ Nch 600V 25A Power MOSFET Datasheet l Outline VDSS 600V RDS on (Max.) 0.15Ω ID ±25A PD 150W TO-3PF l Inner circuit l Features 1) Low on-resistance.

Contextual Info: STY25NA60 N - CHANNEL 600V - 0.225 Q - 25A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET TYPE STY25NA60 Voss RDS on Id 600 V < 0 .2 4 Î2 25 A • TY P IC A L RDS(on) = 0.225 Q m EFFIC IE N T AND R ELIAB LE M O U NTIN G . . . . . . T H R O U G H C LIP ± 30V G ATE TO S O U R C E VO LTAG E RATING

H-Bridge

Abstract: 600V1200V p623f
Contextual Info: Standard H-Bridge Module fastPACK 0 H 2nd gen Features - H-bridge 600V.1200V / 20A.100A Standard- and high speed IGBT´s or MOS-FET Ultra low inductive design Vincotech - Power Flow Through for simple PCB routing Vincotech - Clip In, the reliable interconnection between PCB, module and

mosfet 10a 600v

Abstract: td 1410 IRGP50B60PD 600V 25A Ultrafast Diode irfp250 DRIVER P channel 50A IGBT 30ETH06 IRFP250 50AIF
Contextual Info: PD - 94624B IRGP50B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies

Contextual Info: PD - 94624B IRGP50B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies

035H

Abstract: 30ETH06 IRFP250 IRFPE30 Ice-100
Contextual Info: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

Contextual Info: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

IRGP50B60PDPBF

Abstract: 035H 30ETH06 IRFP250 IRFPE30 210uH
Contextual Info: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

30ETH06

Abstract: IRFP250 IRGP50B60PD
Contextual Info: PD - 94624A IRGP50B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies

IXFH50N60P3

Abstract: IXFQ50N60P3 50N60P3
Contextual Info: IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Polar3TM HiperFETTM Power MOSFET VDSS ID25 = 600V = 50A   160m RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings

ixfh50n60

Abstract: 50n60p IXFT50N60P3 IXFQ50N60P3 ixfh50n60p3 50N60P3 DS100310 N-channel MOSFET to-247 50a 50n60 N-channel MOSFET to-247 50a 600v
Contextual Info: Advance Technical Information IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Polar3TM HiperFETTM Power MOSFET VDSS ID25 = 600V = 50A Ω ≤ 145mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol

APT34M120J

Abstract: MIC4452
Contextual Info: APT34M120J 1200V, 35A, 0.29Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure