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    FCP25N60N Search Results

    FCP25N60N Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FCP25N60N
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V TO-220-3 Original PDF 8
    FCP25N60N_F102
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 25A TO220-3 Original PDF 8
    FCP25N60N-F102
    		ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 25A TO220-3 Original PDF 813.84KB
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    FCP25N60N Price and Stock

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    onsemi FCP25N60N

    MOSFET N-CH 600V 25A TO220-3
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    DigiKey FCP25N60N Tube 50
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    Verical FCP25N60N 1,209 83
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    Rochester Electronics LLC FCP25N60N

    MOSFET N-CH 600V TO-220-3
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    DigiKey FCP25N60N Bulk 66
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    FLIP ELECTRONICS FCP25N60N-F102

    N-CHANNEL 600 V 25A (TC) 216W (T
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    DigiKey FCP25N60N-F102 Tube 300
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    onsemi FCP25N60N-F102

    MOSFET N-CH 600V 25A TO220-3
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    Verical FCP25N60N-F102 591 129
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    Flip Electronics FCP25N60N-F102 2,400
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    Rochester Electronics LLC FCP25N60N-F102

    MOSFET N-CH 600V 25A TO220-3
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    DigiKey FCP25N60N-F102 Bulk 98
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    FCP25N60N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FCP25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from


    Original     		FCP25N60N PDF

    FCP25N60N

    Abstract: F102 DIODE 83A mosfet 600V 25A
    Contextual Info: SupreMOS FCP25N60N_F102 TM tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


    Original     		FCP25N60N F102 DIODE 83A mosfet 600V 25A PDF

    fcp25n60

    Abstract: FCP25N60N
    Contextual Info: FCP25N60N_F102 N-Channel SupreMOS MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS on = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology


    Original     		FCP25N60N fcp25n60 PDF