MOSFET 1000V 10A Search Results

mosfet 10a 800v

Abstract: MOSFET 800V 10A irf 44 n N CHANNEL MOSFET 10A 1000V IRFMG50
Contextual Info: PD-90711C POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 RDS(on) ID 2.0Ω 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD-90711C POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 RDS(on) ID 2.0Ω 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFNG50

Abstract: mosfet 10a 800v high power 91556A
Contextual Info: PD - 91556A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG50 R DS(on) 2.0Ω ID 5.5A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

smd diode 39a

Abstract: mosfet 10a 800v IRFNG40 mosfet 10a 800v high power smd+diode+39a
Contextual Info: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: PD - 90710B POWER MOSFET THRU-HOLE TO-254AA IRFMG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

mosfet 10a 800v

Abstract: IRFMG50 mosfet 10a 800v high power IR rectifier diode 100A 800V
Contextual Info: PD - 90711B POWER MOSFET THRU-HOLE TO-254AA IRFMG50 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG50 R DS(on) 2.0Ω ID 5.6A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

IRFMG40

Contextual Info: PD - 90710B POWER MOSFET THRU-HOLE TO-254AA IRFMG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFMG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

MOSFET 1000v 30a

Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
Contextual Info: OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package

Contextual Info: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package

IRFAG30

Contextual Info: PD -90622 IRFAG30 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG30 BVDSS 1000V RDS(on) 5.6Ω ID 2.3Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 90582 IRFAG50 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG50 BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFAG40

Contextual Info: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD -90622 IRFAG30 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG30 BVDSS 1000V RDS(on) 5.6Ω ID 2.3Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

MOSFET 800V 10A

Abstract: 93973D IRHY7G30CMSE
Contextual Info: PD - 93973D RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY7G30CMSE 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY7G30CMSE 100K Rads (Si) 15Ω ID 1.2A International Rectifier’s RADHardTM HEXFET® MOSFET

APT0502

Abstract: microsemi mosfet 1000V linear mosfet
Contextual Info: APTML100U60R020T1AG Linear MOSFET Power Module VDSS = 1000V RDSon = 600mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance

mosfet 10a 800v

Abstract: MOSFET 800V 10A APT0502
Contextual Info: APTML100U60R020T1AG Linear MOSFET Power Module VDSS = 1000V RDSon = 600mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance

thermistor R55

Abstract: APT0502 mosfet 10a 800v high power sensor ptc
Contextual Info: APTML1002U60R020T3AG VDSS = 1000V RDSon = 600mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance

MOSFET 800V 10A

Abstract: IRHY7G30CMSE
Contextual Info: PD - 93973C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY7G30CMSE 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY7G30CMSE 100K Rads (Si) 15Ω ID 1.2A International Rectifier’s RADHardTM HEXFET® MOSFET

Contextual Info: PD - 93973 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY7G30CMSE 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY7G30CMSE 100K Rads (Si) 15Ω ID 1.2A International Rectifier’s RADHardTM HEXFET® MOSFET

APT0502

Contextual Info: APTML1002U60R020T3AG VDSS = 1000V RDSon = 600mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Linear MOSFET Power Module Application • Electronic load dedicated to power supplies and battery discharge testing Features • • • • • Linear MOSFET Very low stray inductance

Contextual Info: PD - 93973B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY7G30CMSE 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY7G30CMSE 100K Rads (Si) 15Ω ID 1.2A International Rectifier’s RADHardTM HEXFET® MOSFET

10N100P

Abstract: IXFH10N100P IXFV10N100P N CHANNEL MOSFET 10A 1000V PLUS220SMD
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH10N100P IXFV10N100P IXFV10N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 10A Ω 1.4Ω 300ns PLUS220 (IXFV) Symbol Test Conditions