MOBIL IC CODE Search Results

TDA1305 equivalent

Abstract: Dream SAM97XX IC 4804 reverb Processor IC SAM9755 TDA1311 MIDI Dream MOBIL 33 dream sam
Contextual Info: SAM9755 Mobil Phone Synthesizer OVERVIEW The SAM9755 integrates into a single chip a SAM97xx core 64 slots DSP + 16bit processor , a 32k x 16 RAM and glue logic. With addition of an external ROM or FLASH and a stereo DAC, a complete MIDI sound unit can be built, including reverb

C4814

Contextual Info: C4814 Low EM I Clock Generator with f C for M obil Pentium System Boards A p p ro ve d P roduct PRODUCT FEA TURES FREQU ENCYSELECTUON TABLE CPU • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Supports Synchronous PCI Bus Clocking. 3 CPU clocks 1 AGP clock

Contextual Info: ËÊÊË •ir « ^ C4814 mm « Low EMI Clock Generator with f C for Mobil Pentium System Boards Approved Product PRODUCT FEA TURES ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Supports Synchronous PCI Bus Clocking. 3 CPU clocks 1 AGP clock Up to 8 SDRAM clocks for 4 mobile SO DIMMs.

Contextual Info: SG572 I2C Frequency Clock Generator w/ EMI Reduction SST for Mobil Applications. Preliminary PRODUCT FEATURES S S S S S S S S S S S S S FREQUENCY TABLE Supports Pentium & Pentium® II CPUs. 2 CPU and 2 AGP clocks. 6 SDRAM clocks for 3 Mobil SO DIMMs. Power Management hardware support.

opb 3902

Abstract: esis power ups RCA Solid State amplifier TETRA TETRA radio HT-200R RCA SOLID STATE sds ts2 TETRA monitoring audi mmi
Contextual Info: 3900 Series Digital Radio Test Set TETRA Option Manual 1002-4401-3P0 Issue-8 EXPORT CONTROL WARNING: This document contains controlled technology or technical data under the jurisdiction of the Export Administration Regulations EAR , 15 CFR 730-774. It cannot be transferred to any foreign

RFID Entry Door Lock Access Control System

Abstract: TRELLEBORG TIRIS glass Transponder how to make ic copier Automatic Railway Gate Control system, ULTRASONIC parking system Car security system seminar RFID Proximity Entry Door Lock Access Control System Automated Guided Vehicles NISSAN
Contextual Info: INTERNATIONAL NEWSLETTER OF THE TI RFID GROUP ISSUE NO. 20, 2000 Baggage Direct –Uses Tag-it The World’s First RFID-based Baggage Delivery System aggage Direct took off at Heathrow Airport on July 27th. Developed by systems integrator KTP Ltd using Texas

Contextual Info: BFR193L3 NPN Silicon RF Transistor Preliminary data
For low noise, high-gain amplifiers up to 2 GHz 3
For linear broadband amplifiers
fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

ua 722 fc

Abstract: BCR847BF MARKING rks BFR94
Contextual Info: BFR949F NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA
fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

BFR340T

Contextual Info: BFR340T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
Transition frequency of 14 GHz
High insertion gain 2
Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR183F NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 2 3 collector currents from 2 mA to 30 mA 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

E 94733

Abstract: marking p1S E 94733 3
Contextual Info: BFR92W NPN Silicon RF Transistor* • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents 3 2 1 from 0.5 mA to 20 mA • Complementary type: BFT92W PNP * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution!

infineon marking code L2

Contextual Info: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BFP420F

Abstract: BFP520F
Contextual Info: BFP520F NPN Silicon RF Transistor* • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 1 Outstanding Gms = 23 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability

BFP183W

Abstract: BGA420 marking rhs
Contextual Info: BFP183W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 2 mA to 30 mA 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

marking FA

Contextual Info: BFR340L3 NPN Silicon RF Transistor Preliminary data
Low voltage/ Low current operation 3
Transition frequency of 14 GHz
High insertion gain 1
Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Infineon Technologies transistor 4 ghz

Abstract: BFR193L3 infineon marking code L2 1B marking transistor INFINEON transistor marking C5 MARKING TRANSISTOR
Contextual Info: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 • fT = 8 GHz, F = 1 dB at 900 MHz 1 2 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

transistor marking RHs

Abstract: transitor RF 98 BFR183F
Contextual Info: BFR183F NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 2 3 collector currents from 2 mA to 30 mA 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BCR108T

Abstract: BFR183T SC75
Contextual Info: BFR183T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BCR108T

Abstract: BFR182T SC75
Contextual Info: BFR182T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BCR108W

Abstract: BFR182W
Contextual Info: BFR182W NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 3 2 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BFP181R

Abstract: marking code RFs
Contextual Info: BFP181R NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 2 4 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BFP193W

Abstract: BGA420
Contextual Info: BFP193W NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz 3 • For linear broadband amplifiers 2 4 • fT = 8 GHz, F = 1 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

BFP196

Abstract: BFP181 transistor bfp196
Contextual Info: BFP196 NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz

828 npn

Abstract: BCR108W BFR193W
Contextual Info: BFR193W NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 2 • fT = 8 GHz, F = 1 dB at 900 MHz 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description