MMIC POWER AMPLIFIER S-BAND 2W Search Results

WPS-445333H-02

Contextual Info: WPS-445333H-02 4.4 – 5.3 GHz 2W High Efficiency Linear Power Amplifier June 2011 Features: • • • • • • • • 30 dB Gain 33 dBm P-1dB OIP3 45 dBm 26.0 dBm Linear Pout @ 2.5% EVM 802.11 64QAM Fully Matched Input and Output for Easy Cascade

S2083

Abstract: MAAP-000064-SMB004 MAAP-000064-PKG003 MAAPGM0064
Contextual Info: RoHS Compliant MAAP-000064-PKG003 Amplifier, Power, 2W 6.5-9.5 GHz Rev Advance Information Features ♦ 2 Watt Saturated Output Power Level ♦ Variable Drain Voltage 6-10V Operation ♦ MSAG Process Description YYWW AP064G XXX MACOM The MAAP-000064-PKG003 is a 2-stage 2.0 W power amplifier

mobile phone basic block diagram

Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

Contextual Info: MAAP-000064-PKG003 Part Status: Advance Rev: A Amplifier, Power, 2W 6.5—9.5 GHz M/A-COM Products RoHS Compliant Features ♦ 2 Watt Saturated Output Power Level ♦ Variable Drain Voltage 6-10V Operation ♦ MSAG Process YYWW AP064G XXX MACOM Description

BB 509 varicap diode

Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Contextual Info: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

Traveling Wave Amplifier

Abstract: 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing
Contextual Info: DC to 85GHz TWA and Ka-band 4.9W Power Amplifier Using an Optical Lithography Based Low Cost PHEMT Process Kohei Fujii, John Stanback, and Henrik Morkner White Paper Abstract Overview of The Mmic Process An optical photo lithography based 0.15 m GaAs PHEMT

GaN amplifier

Abstract: GaN Bias 25 watt Gan on silicon transistor rf microwave amplifier with S Parameters rf power amplifier transistor with s-parameters rf power amplifier with s parameters S-10 S-14 high power fet amplifier schematic power amplifier mmic design high efficiency
Contextual Info: 11/02/01 LB Generic 2.5-W 60% Bandwidth C-Band MMIC Amplifier Inder J. Bahl Abstract This paper reports the design and test data of a generic 2.5-W two-stage C-band MMIC power amplifier developed using the MSAG MESFET process. We measured typically a minimum PAE of 45% and 2.5W CW output power over

Contextual Info: June 2012 OFF-THE-SHELF Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation Hittite Exhibiting at MTT-S 2012! View our product demos in Montreal, June 19 to 21, 2012. Booth #1701 ADC HMC9000 Multi-GHz Quantizer 25 New Featured Products!

BGU7073

Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

circuit diagram of GSM based home automation system

Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Contextual Info: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

MGA-242740-02

Abstract: 6 ghz amplifier 10w 3360D
Contextual Info: MGA-242740-02 2.4 – 2.7 GHz 10W High Efficiency Linear Power Amplifier Preliminary Data Sheet December 2008 Features: • • • • • • • • 15 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power

Contextual Info: MGA-242740-02 2.4 – 2.7 GHz 10W High Efficiency Linear Power Amplifier New Product Data Sheet December 2008 Features: • • • • • • • • 15 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power

MPF102 spice model

Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Contextual Info: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for

2SK43 transistor

Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Contextual Info: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written

5.8 ghz amplifier 10w

Contextual Info: MGA-495940-02 4.9 – 5.9 GHz 10W High Efficiency Linear Power Amplifier Preliminary Data Sheet November 2008 Features: •        12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power

Contextual Info: MGA-495940-02 4.9 – 5.9 GHz 10W High Efficiency Linear Power Amplifier Preliminary Data Sheet November 2008 Features: •        12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power

very simple walkie talkie circuit diagram

Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
Contextual Info: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.

RAYTHEON

Abstract: GRM39COG100J050AD RMBA19500 RMBA19500-58
Contextual Info: RMBA19500-58 PCS 2 Watt Linear GaAs MMIC Power Amplifier Description Features The RMBA19500 is a high power, highly linear Power Amplifier. The circuit uses Raytheon’s pHEMT process. It has been designed for use as a driver stage for PCS base stations, or as the output stage for Micro- and Pico-Cell base

TG2H214220-FL

Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
Contextual Info: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4

Motorola transistor smd marking codes

Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
Contextual Info: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,

12 volts 50 watt amplifier schematic diagram

Abstract: schematic diagram power amplifier free schematic diagram power amplifier free a C3216X5R1A475KT 2 Watt rf Amplifier gsm signal amplifier circuit diagram RAYTHEON RMBA09500-58 G655966 2200J
Contextual Info: Raytheon Raytheon Commercial Electronics RMBA09500-58 Cellular/GSM 2 Watt Linear GaAs MMIC Power Amplifier The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses RaytheonÕs pHEMT process. It is designed for use as a driver

HMC939

Abstract: hmc597 TRANSIMPEDANCE mmic laser HMCAD1101 HMC676LP3E
Contextual Info: OFF-THE-SHELF Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation New 10 MHz to 20 GHz Signal Generator! See Page 3 49 New Featured Products! 2W & 4W Power Amplifiers January 2011 Hittite Acquires Arctic Silicon Devices! New High Speed ADC Product Line

RAYTHEON

Abstract: GRM39COG100J050AD RMBA19500 RMBA19500-58 03-o Raytheon Application Note DCS-1800
Contextual Info: Raytheon Raytheon Commercial Electronics RMBA19500-58 PCS/DCS1800 2 Watt Linear GaAs MMIC Power Amplifier The RMBA19500 is a high power, highly linear Power Amplifier. The circuit uses RaytheonÕs pHEMT process. It has been designed for use as a driver stage for PCS/DCS1800 base stations, or as the output stage for