MMBTA13L Search Results

SMMBTA13LT1G

Abstract: SMMBTA14LT1G
Contextual Info: MMBTA13LT1G, MMBTA13LT1G, MMBTA14LT1G, SMMBTA14LT1G Darlington Amplifier Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 TO−236 CASE 318

Contextual Info: Darlington Amplifier Transistors NPN Silicon MMBTA13LT1 MMBTA14LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CES 30 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 10 Vdc

MMBTA13

Abstract: MMBTA13LT1 MMBTA14 MMBTA14LT1
Contextual Info: ON Semiconductort MMBTA13LT1 MMBTA14LT1 Darlington Amplifier Transistors MMBTA14LT1 is a Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage

MMBTA13

Abstract: MMBTA13LT1 MMBTA13LT1G MMBTA14 MMBTA14LT1 MMBTA14LT1G
Contextual Info: MMBTA13LT1G, MMBTA14LT1G Darlington Amplifier Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant BASE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage

transistor D 2395

Abstract: Motorola 2396
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 MMBTA14LT1* Darlington Amplifier Transistors NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 1 3 1 EMITTER 2 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit

MMBTA13

Abstract: MMBTA13LT1 MMBTA14 MMBTA14LT1
Contextual Info: MOTOROLA Order this document by MMBTA13LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 MMBTA14LT1* Darlington Amplifier Transistors NPN Silicon COLLECTOR 3 *Motorola Preferred Device BASE 1 3 EMITTER 2 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage

MMBTA13LT1G

Contextual Info: MMBTA13LT1G, MMBTA13LT1G, MMBTA14LT1G, SMMBTA14LT1G Darlington Amplifier Transistors http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique SOT−23 TO−236 CASE 318

marking pk sot23

Abstract: 50K MARKING SOT23
Contextual Info: ON Semiconductort MMBTA13LT1 MMBTA14LT1 Darlington Amplifier Transistors MMBTA14LT1 is a Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage

transistor D 2395

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 M M BTA14LT1* Darlington A m plifier Transistors NPN Silicon 'Motorola Preferred Device COLLECTOR 3 EMITTER 2 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol

Contextual Info: Darlington Amplifier Transistors NPN Silicon MMBTA13LT1 MMBTA14LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CES 30 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 10 Vdc

MMBTA13LT1

Contextual Info: MMBTA13LT1 NPN Silicon Epitaxial Planar Transistor Darlington Transistor for applications requiring extremely high current gain at collector currents to 1.0 A. SOT-23 Plastic Package Absolute Maximum Ratings* Ta = 25 oC Symbol Value Unit Collector Emitter Voltage

MMBTA13LT1

Abstract: transistor x1
Contextual Info: MMBTA13LT1 NPN Silicon Epitaxial Planar Transistor Darlington Transistor for applications requiring extremely high current gain at collector currents to 1.0 A. SOT-23 Plastic Package Absolute Maximum Ratings* Ta = 25 oC Symbol Value Unit Collector Emitter Voltage

Contextual Info: ON Semiconductort MMBTA13LT1 MMBTA14LT1 Darlington Amplifier Transistors MMBTA14LT1 is a Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage

MMBTA13

Abstract: MMBTA13LT1 MMBTA14 MMBTA14LT1
Contextual Info: ON Semiconductort MMBTA13LT1 MMBTA14LT1* Darlington Amplifier Transistors *ON Semiconductor Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage

Transistor A14

Abstract: a14 Transistor MMBTA13LT1 MMBTA14LT1 a13 marking transistor
Contextual Info: MMBTA13LT1/14LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * High Current Gains * Monolithic Construction * Available in Both Through-Hole and Surface Mount Packages ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Emitter Voltage

MMBTA13

Abstract: MMBTA13LT1 MMBTA13LT1G MMBTA14 MMBTA14LT1 MMBTA14LT1G
Contextual Info: MMBTA13LT1, MMBTA14LT1 MMBTA14LT1 is a Preferred Device Darlington Amplifier Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 BASE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES

MMBTA13

Abstract: MMBTA13LT1 MMBTA14 MMBTA14LT1 5m265 50K10K
Contextual Info: LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors NPN Silicon MMBTA13LT1 MMBTA14LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CES 30 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage

Contextual Info: RECTRON SEMICONDUCTOR MMBTA13LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM 0.3 A * Collector-base voltage V(BR)CBO: 30 V * Operating and storage junction temperature range

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and