MMBTA06 Search Results

MMBTA06

Contextual Info: MMBTA06 0.5A , 80V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    SOT-23 High Voltage Application Telephone Application Complementary to MMBTA56 A

1GM sot-23 transistor

Abstract: vishay TRANSISTOR Sot-23 MARKING CODE 20FEB02
Contextual Info: MMBTA06 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors NPN TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 .016 (0.4) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95)

MPS A06 transistor

Abstract: MPS A06 MPSA06 "cross reference" mps 0724 marking A06 amplifier FAIRCHILD SOT-223 MARK Marking code mps
Contextual Info: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

1gm transistor

Abstract: 1GM sot-23 transistor marking code 1GM 1GM j MMBTA06 MMBTA56 MPSA06
Contextual Info: MMBTA06 Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. SOT-23 3.Collector • As complementary type, the PNP tranistor MMBTA56 is

Contextual Info: MCC TM Micro Commercial Components Features • • • • • MMBTA05 THRU MMBTA06
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Halogen free available upon request by adding suffix "-HF"

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBTA06LT1 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 0.5

Contextual Info: MMBTA06W, MMBTA06W, Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model − 4 kV ESD Rating: Machine Model − 400 V http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and

Contextual Info: MMBTA05 MMBTA06 Driver NPN 3 * “G” Lead Pb -Free 1 2 SOT-23 VCEO MMBTA05 60 60 4.0 MMBTA06 80 80 4.0 MMBTA05=1H, MMBTA06=1GM (3) MMBTA05 MMBTA06 60 80 MMBTA05 MMBTA06 60 80 4.0 I B =0) 6 8 S MMBTA05 MMBTA06 3.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2.0%

Contextual Info: SEMICONDUCTOR TECHNICAL DATA MMBTA06 EPITAXIAL PLANAR NPN TRANSISTOR DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. FEATURES • Complementary to MMBTA56. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT Collector-Base Voltage VC B O 80

smd transistor 1g

Abstract: SMD transistor code 24 smd transistor 24 sot23 transistor SMD 24 TRANSISTOR SMD MARKING CODE transistor marking SA sot-23 smd transistor marking 1h smd transistor .1G TRANSISTOR SMD MARKING CODE 2V smd transistor SA
Contextual Info: SMD General Purpose Transistor NPN MMBTA05/MMBTA06 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA06 NPN SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES  3 * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW 2 1 SOT-23 JEDEC TO-236  ORDERING INFORMATION Ordering Number Note:  MMBTA06G-AE3-R

Contextual Info: MCC TM Micro Commercial Components Features MMBTA05 THRU MMBTA06
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# NPN Small Signal General Purpose Amplifier Transistors Epitaxial Planar Die Construction

MMBTA06g

Abstract: SWITCHING TRANSISTOR 60V MMBTA06L MMBTA06 MMBTA06-AE3-R MMBTA06L-AE3-R marking 041 on
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA06 NPN SILICON TRANSISTOR AMPLIFIER TRANSISTOR „ FEATURES 3 * Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW 2 1 SOT-23 Lead-free: MMBTA06L Halogen-free:MMBTA06G „ ORDERING INFORMATION Normal MMBTA06-AE3-R

K1G NPN

Abstract: TRANSISTOR k1g k1g transistor
Contextual Info: MMBTA05 / MMBTA06 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA55 / MMBTA56 Ideal for Medium Power Amplification and Switching SOT-23 A B Mechanical Data · · · ·

UA 3843 A

Abstract: MPSA06 fairchild transistor BF121 MMBTA06 MPSA06 PZTA06 ic 3843 ua 3843 ic 3843 datasheet
Contextual Info: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

BTA05

Contextual Info: M A X IM U M RATINGS Rating Symbol 1 MMBTA05 Unit MMBTA06 C o lle c to r -E m itte r V o lta g e v CEO 60 80 V dc C o lle c to r-B a s e V o lta g e V CBO 60 80 V dc E m itte r-B a s e V o lta g e v EBO 4.0 lC 500 C o lle c to r C u rre n t — C o n tin u o u s

MMBTA05LT1G

Abstract: 1GM sot-23 MMBTA05 MMBTA05LT1 MMBTA05LT3 MMBTA05LT3G MMBTA06 MMBTA06LT1 MMBTA06LT1G MMBTA06LT3
Contextual Info: MMBTA05LT1, MMBTA06LT1 MMBTA06LT1 is a Preferred Device Driver Transistors NPN Silicon Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBTA05LT1 MMBTA06LT1 VCEO Collector −Base Voltage

Marking Code 2F

Abstract: 250-600
Contextual Info: ilAIEC Dffi SURFACE MOUNT TRANSISTORS NPN TRANSISTORS - TO-236 PACKAGE Type Number MMBT2222A IMBT3904 MMBT4401 MMBTA05 MMBTA06 MMBT5551 MMBTA42 CEO Marking Code 1P 1N 2X 1H 1G 3S 1D 40 40 40 60 80 160 300 1 ' c b o VCB h FE ® 100-300 100-300 100-300

1GM sot-23 transistor

Abstract: 1GM sot-23 MMBTA05LT1 MMBTA06 MMBTA06LT1 MMBTA05
Contextual Info: MMBTA05LT1 MMBTA06LT1* Driver Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MMBTA05 MMBTA06 Unit Collector–Emitter Voltage VCEO 60 80 Vdc Collector–Base Voltage VCBO 60 80 Vdc Emitter–Base Voltage VEBO 4.0 Vdc

k1g transistor

Contextual Info: SPICE MODEL: MMBTA05 MMBTA06 MMBTA05 / MMBTA06 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · Epitaxial Planar Die Construction · · Ideal for Medium Power Amplification and Switching Complementary PNP Types Available MMBTA55 / MMBTA56 SOT-23

k1g transistor

Contextual Info: MMBTA05 / MMBTA06 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBTA55 / MMBTA56 Ideal for Low Power Amplification and Switching

ic 3843 datasheet

Abstract: 3843 MMBTA06 MPSA06 PZTA06
Contextual Info: MPSA06 MMBTA06 PZTA06 C C E E C BE TO-92 SOT-23 C B B SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol

Contextual Info: MMBTA05-AU,MMBTA06-AU,MMBTA55-AU,MMBTA56-AU NPN AND PNP HIGH VOLTAGE TRANSISTOR VOLTAGE 60~80 Volts POWER SOT-23 225 mWatts Unit：inch mm FEATURES • NPN and PNP silicon, planar design 0.120(3.04) 0.110(2.80) • Collector current I C = 500mA • Acqire quality system certificate : TS16949

1GM sot-23

Abstract: MMBTA05 MMBTA05LT1 MMBTA06 MMBTA06LT1
Contextual Info: MOTOROLA Order this document by MMBTA05LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTA05LT1 MMBTA06LT1* Driver Transistors NPN Silicon COLLECTOR 3 *Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol MMBTA05 MMBTA06 Unit Collector – Emitter Voltage