MMBT6427L Search Results
MMBT6427L Datasheets (10)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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MMBT6427L |
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Small Signal Darlington | Original | 113.09KB | 8 | ||
MMBT6427LT1 | Leshan Radio Company | 40 V, darlington transistor | Original | 201.15KB | 5 | ||
MMBT6427LT1 |
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Darlington Transistor | Original | 253.73KB | 8 | ||
MMBT6427LT1 |
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Darlington Transistor NPN Silicon | Original | 69.69KB | 6 | ||
MMBT6427LT1 |
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Darlington Transistor NPN | Original | 113.09KB | 8 | ||
MMBT6427LT1/D |
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Motorola Preferred Device | Original | 253.72KB | 8 | ||
MMBT6427LT1-D |
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Darlington Transistor NPN Silicon | Original | 113.09KB | 8 | ||
MMBT6427LT1G |
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Small Signal Darlington NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 | Original | 157.82KB | 6 | ||
MMBT6427LT1G |
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Small Signal Darlington | Original | 113.09KB | 8 | ||
MMBT6427LT3 |
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Small Signal Darlington | Original | 113.09KB | 8 |
MMBT6427L Price and Stock
onsemi MMBT6427LT1GTRANS NPN DARL 40V 0.5A SOT23-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT6427LT1G | Cut Tape | 27,502 | 1 |
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MMBT6427LT1G | Reel | 390,000 | 14 Weeks | 3,000 |
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MMBT6427LT1G | 188,831 |
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MMBT6427LT1G | 99,000 | 3,000 |
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MMBT6427LT1G | 57,000 | 14 Weeks | 30,000 |
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MMBT6427LT1G | Reel | 390,000 | 3,000 |
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MMBT6427LT1G | Bulk | 200 |
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MMBT6427LT1G | 99,000 |
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MMBT6427LT1G | 10,560 | 59 |
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MMBT6427LT1G | 8,448 |
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MMBT6427LT1G | 1,900 | 1 |
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MMBT6427LT1G | 2 |
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MMBT6427LT1G | 19,617 |
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MMBT6427LT1G | 14 Weeks | 60,000 |
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MMBT6427LT1G | 12,000 | 15 Weeks | 3,000 |
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MMBT6427LT1G | 1,000 |
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MMBT6427LT1G | 16 Weeks | 3,000 |
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MMBT6427LT1G | 99,000 |
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MMBT6427LT1G | 1,362,000 | 1 |
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MMBT6427LT1G | 108,840 |
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onsemi SMMBT6427LT1GTRANS NPN DARL 40V 0.5A SOT23-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SMMBT6427LT1G | Digi-Reel | 23,203 | 1 |
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SMMBT6427LT1G | Reel | 10 Weeks | 30,000 |
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SMMBT6427LT1G | 5,908 |
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SMMBT6427LT1G | Reel | 30,000 |
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SMMBT6427LT1G | 2,200 | 15 |
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SMMBT6427LT1G | 1 |
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SMMBT6427LT1G | 10 Weeks | 30,000 |
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SMMBT6427LT1G | 11 Weeks | 3,000 |
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SMMBT6427LT1G | 12 Weeks | 3,000 |
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SMMBT6427LT1G | 1,775 |
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onsemi MMBT6427LT3TRANS NPN DARL 40V 0.5A SOT23-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT6427LT3 | Reel | 30,000 |
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onsemi MMBT6427LT1TRANS NPN DARL 40V 0.5A SOT23 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT6427LT1 | Cut Tape | 1 |
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MMBT6427LT1 | Reel | 3,000 |
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MMBT6427LT1 | 10,170 |
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MMBT6427LT1 | 4,355 |
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MMBT6427LT1 | 7,000 | 1 |
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MMBT6427LT1 | 6,691 |
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MMBT6427LT1 | 7,230 |
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MMBT6427LT1 | 40 |
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MMBT6427LT1 | 120,000 |
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onsemi MMBT6427LT3GTRANS NPN DARL 40V 0.5A SOT23-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT6427LT3G | Reel | 30,000 |
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Buy Now | ||||||
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MMBT6427LT3G | 1,092 |
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Get Quote |
MMBT6427L Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor MMBT6427LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device EMITTER 2 M AXIMUM RATINGS Rating C o llector-E m itter Voltage Symbol Value Unit Vdc Vdc v CEO 40 C o llecto r-B ase Voltage VC B O 40 |
OCR Scan |
MMBT6427LT1 O-236AB) T6427LT1 | |
Contextual Info: M A X IM U M RATINGS Sym bol Value Unit Collector-Emitter Voltage Rating v CEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage v EBO 12 Vdc *C 500 m Adc Collector Current — Continuous MMBT6427LT1* CASE 318-07, STYLE 6 SOT-23 TO-236AB Collector 3 |
OCR Scan |
MMBT6427LT1* OT-23 O-236AB) | |
SOD123
Abstract: marking pa sot-363
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MMBT6427LT1 236AB) SOD123 marking pa sot-363 | |
NPN 300 VOLTS vce POWER TRANSISTOR
Abstract: SMMBT6427LT1G
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MMBT6427LT1G, SMMBT6427LT1G AEC-Q101 MMBT6427LT1/D NPN 300 VOLTS vce POWER TRANSISTOR | |
Contextual Info: Darlington Transistors NPN Silicon MMBT6427LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 40 Vdc Emitter–Base Voltage V 12 Vdc 500 mAdc Collector Current — Continuous |
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MMBT6427LT1 236AB) | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistor MMBT6427LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device EMITTER 2 MAXIMUM RATINGS Sym b ol Value Unit C ollector-E m itter Voltage v CE O 40 Vdc C o llector-B ase Voltage VC BO 40 Vdc E m itter-B ase Voltage |
OCR Scan |
MMBT6427LT1 -236A b3b7255 | |
MMBT6427LT1
Abstract: 50K MARKING SOT23
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MMBT6427LT1 r14525 MMBT6427LT1/D MMBT6427LT1 50K MARKING SOT23 | |
Contextual Info: Darlington Transistors NPN Silicon MMBT6427LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 40 Vdc Emitter–Base Voltage V 12 Vdc 500 mAdc Collector Current — Continuous |
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MMBT6427LT1 236AB) | |
Contextual Info: MMBT6427LT1 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.10k |
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MMBT6427LT1 Freq130M | |
Contextual Info: MMBT6427LT1G, MMBT6427LT1G Darlington Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS |
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MMBT6427LT1G, SMMBT6427LT1G MMBT6427LT1/D | |
MMBT6427LT1GContextual Info: MMBT6427LT1G Darlington Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage |
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MMBT6427LT1G MMBT6427LT1/D MMBT6427LT1G | |
MMBT6427LT1
Abstract: MMBT6427LT1G
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MMBT6427LT1 MMBT6427LT1/D MMBT6427LT1 MMBT6427LT1G | |
Contextual Info: ON Semiconductort Darlington Transistor MMBT6427LT1 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 40 Vdc Emitter −Base Voltage VEBO 12 Vdc IC |
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MMBT6427LT1 | |
MMBT6427LT1
Abstract: MMBT6427LT1G
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MMBT6427LT1 MMBT6427LT1 MMBT6427LT1G | |
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MMBT6427LT1
Abstract: motorola darlington power transistor
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MMBT6427LT1/D MMBT6427LT1 MMBT6427LT1/D* MMBT6427LT1 motorola darlington power transistor | |
MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
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SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N | |
MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
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OCR Scan |
06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211 | |
BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
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BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 | |
Contextual Info: MOTOROLA SC XSTRS/R F laE D M A X I M U M R A T IN G S Sym bol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage Ve b o 12 Vdc 'c 500 mAdc Sym bol M ax Unit PD 225 mW 1.8 mW/°C Ro ja 556 °c/w Pd 300 |
OCR Scan |
MMBT6427L OT-23 O-236AB) | |
transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
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OCR Scan |
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS | |
CS5170
Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
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SGD501/D Janua667 CS5170 mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control | |
FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
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GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 | |
Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
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CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l |