MJ13 Search Results

NPN Transistor 10A 400V

Abstract: MJ13091 dc motor specification MJ13090
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJ13090/13091 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min)—MJ13090 = 450V(Min)—MJ13091 ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in

MJ13071

Abstract: MJ1307 MJ13070 mj130
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJ13070/13071 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min)—MJ13070 = 450V(Min)—MJ13071 ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in

Contextual Info: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)

MJ13333

Abstract: MJ13330 1N4934 1N4937 MJ13331 MJE200 MJE210
Contextual Info: MOTOROLA Order this document by MJ13333/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ13333  Data Sheet SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400–500 VOLTS 175 WATTS The MJ13333 transistor is designed for high voltage, high–speed, power switching

Contextual Info: . L/na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN SILICON TRANSISTORS MJ13335 HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

DA 3807 transistor

Abstract: transistor da 3807 J13071 BJW transistor saa 1074 AN-222 MJ13070 MJ13071 S030G 81073
Contextual Info: motorola f sc -c x s t r s / r fj - 6367254 MOTOROLA D[T|t,3b7ES4 0 D fiID? 0 4 Scf XSTRS/R F 9 6 D 8 10 7 0 MOTOROLA MJ13070 MJ13071 SEM ICONDUCTOR TECHNICAL DATA - iQ 9 S f e I ) e s i } i n e r ’ s ' D a t a D T ' ?-/3 S h e e t 5 AM PERE S W I T C H M O D E II S E R I E S

mj1302

Abstract: MJ3281A J1302
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA UDM M J3281A * PNP M J1302A * Designer's Data Sheet Com plem entary NPN-PNP Silicon Power Bipolar Transistor *Motorola P n U n d DesKc* 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power

Contextual Info: MOTOROLA Order this document by MJ13333/D SEMICONDUCTOR TECHNICAL DATA M J13333 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistor 20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS The M J13 33 3 tra n sisto r is d e sig n e d for high volta ge , h ig h -s p e e d , po w e r sw itching

Contextual Info: M O T O RO L A SC XSTRS/R 1SE D I F b3fei7254 O G ö S i a i MOTOROLA SEMICONDUCTOR M | MJ13070 TECHNICAL DATA D e s ig n e r ’s D a ta Sheet 5 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR T h e M J 13070 tra n sisto r is d e sig n e d for high-voltage, hig h-speed ,

J13070

Abstract: J13071
Contextual Info: ñ Ó T Ó R Ó L X “ SC -CXSTRS/R 6367254 FJ- MOTOROLA DE | t , 3 b 7 E S 4 SC < X S T R S / R F> DDÛ3.D7D 4 960’ 81070 MOTOROLA D T '^ '/ 3 MJ13070 MJ13071 SEM ICONDUCTOR TECHNICAL DATA 5 AM PERE S W IT C H M O D E II S E R IE S N P N S IL IC O N P O W E R T R A N S IS T O R S

j1309

Contextual Info: motorola sc -c x s t r s / 6367254 r f > DE | b d b i V b 4 MOTOROLA SC XSTRS/R F 96D 8 1 0 8 2 MOTOROLA □□A ioag . _D Tr T' 3 3 - /3 MJ13090 M1H13090 u MJ13091 MJH13091 SEMICONDUCTOR TECHNICAL DATA 15 A M P E R E N P N SILICO N PO W ER T R A N S IS T O R S

tip122 tip127 audio amp

Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power

Contextual Info: IN 1 I 2 I 3 I 4 I 5 I 6 I I 8 I 2 9 , 8 8 + 0,10 1,02 25,4 M ATERIALS H O U SING:STANDARD PCB LAYOUT AA Vi OR ETHAN ATJ , CONNECTORS ASSEMBLIES PART NO. MJ13A2-KXxx-0808 DWG NO. MJ13A2-KXxx-0808 C O N T A C T :0 .4 5 m m CHECKED BY CY TOLERANCES ARE - <

MJ13080

Abstract: MJ13081 AN-222 DOA107A
Contextual Info: Tb MOTOROLA SC -CXSTRS/R F> f 6 3 8 7 2 5 4 M O J O R O L A SÇ DE |b3t.75SM 000107b 5 96D 8 1 0 7 6 X S T R S / R F D T-33-/3 MOTOROLA MJ13080 MJ13081 SEM ICONDUCTOR TECHNICAL DATA ' " ^ É S D e s i g n e r ’ s 'O ì a t a ^ S h e e t á g f c s s * '-

MJE13005A

Abstract: MJ4361 MJ3237 MJE10001 MJ2901 MJ9000 MJ430 MJE240 MJE4923 MJ2252
Contextual Info: STI Type: MJ13330 Notes: Polarity: NPN Power Dissipation: 175 VCEV: 400 VCEO: 200 ICEV: 400 ICEV A: .25 hFE: 8.0 hFE A: 15 VCE: 1.5 VBE: 1.8 IC: 10 COB: 400 fT: 5.0 Case Style: TO-204AA/TO-3: Industry Type: MJ13330 STI Type: MJ13101 Notes: Polarity: NPN Power Dissipation: 175

MJ3281A

Abstract: MJ1302A Motorola Bipolar Power Transistor Data complementary npn-pnp power transistors transistor pnp 3015 MJ1302 LOW FREQUENCY POWER bipolar npn TRANSISTOR to3 motorola bipolar transistor Motorola Power Transistor
Contextual Info: MOTOROLA Order this document by MJ3281A/D SEMICONDUCTOR TECHNICAL DATA NPN Designer's MJ3281A* PNP MJ1302A*  Data Sheet Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS

Contextual Info: n O T O R O L A SC Í X S T R S / R FJ 6367254 MOTOROLA SC DE'flt,3ti725 4 DGfllGflfl CXSTRS/R F 96D 6 1 0 8 8 T - D 1 1 - f * MOTOROLA SEMICONDUCTOR MJ13101 TECHNICAL DATA î^^88H)esigner’s=:I)ata Sheet 20 AMPERE SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR

MJ13335

Abstract: je210 JE-21 MJ13330
Contextual Info: MOTOROLA SC XSTRS/R F l Z E D | b3b7S54 O O Û S I H S t J MOTOROLA MJ13333 M l13335 S E M IC O N D U C T O R TECHNICAL DATA D e s ig n e r s D a ta . S h e e t 20 A M P E R E SW IT C H M O D E S E R IE S NPN S IL IC O N POWER T R A N S IS T O R S NPN S IL IC O N

Contextual Info: MJ13091 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)450ö V(BR)CBO (V) I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

DDO10

Abstract: MJ-13101 1N4937 AN-222 MJ13101
Contextual Info: M O T O R O L A SC { X S T R S / R FJ 6367254 MOTOROLA SC DE Jt. 3 t.7 E 54 DGfllDflfl X S TR S /R F 96 D 8 1 0 8 8 T - D J 3 - / 5 ' MOTOROLA SEMICONDUCTOR MJ13101 TECHNICAL DATA s ^ ^ 8 g 0 D e s ig n e r’s * D a ta S h e e t -sea^v-Ä'' 20 AM PERE SWITCHMODE II SERIES

Contextual Info: F ile N u m b e r MJ13090, MJ13091 1870 15-A Sw itchM ax II Power Transistors T E R M IN A L D E S IG N A T IO N S H ig h -V o lta g e N -P -N Typ es fo r O ff-L in e Pow er Supplies and O th e r H ig h -V o lta g e S w itchin g A pplications Features: • Fast s w itc h in g spe ed

Contextual Info: Tb MOTOROLA SC -CXSTRS/R F> f 6387254 M O JO RO LA SÇ X S T R S / R DE |b3t.75SM 000107b 5 96D 8 1 0 7 6 F D T-33-/3 MOTOROLA MJ13080 MJ13081 SEMICONDUCTOR TECHNICAL DATA ' " ^ É S D e s ig n e r ’ s 'O ìa t a ^ S h e e t ¿ ¿ g fc s s * '- 8 AMPERE

k 3683 transistor

Abstract: MJ-13080
Contextual Info: MOTOROLA SC 15E D I fc3b75S4 0005127 S | XSTRS/R F MOTOROLA Ml13080 SEMICONDUCTOR TECHNICAL DATA D esig n er’s D ata S h eet 8 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 150 WATTS The MJ13080 tra n sisto r is designed fo r high -vo ltag e , high-speed,

MJ13332

Contextual Info: tSztnL-donauctoi , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ13332 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VcEO(sus) = 350V(Min) • High Switching Speed