MJ 411 TRANSISTOR Search Results

Contextual Info: OM6501ST OM6502ST INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-257AA PACKAGE 500 Volt, 5 And 10 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability

2SK3128

Abstract: SC-65 mj 411 transistor
Contextual Info: TO SH IBA 2SK3128 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI 2 S K 3 1 28 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm Low Drain-Source ON Resistance : RßS (ON) = 9.5 mH (Typ.)

Contextual Info: OM6512SC OM6513SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 1000 Volt. 8 Am p. N-C hannel IGBT In A H e r m e tic Metal Package FEATURES • Isolated Hermetic Metal Package • High Input Impedance • Low On-Voltage • High Current Capability

GP11N

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N 6 0 E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

Contextual Info: OM6514SS OM6515SS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt. 8 Am p , N- Channel IGBT In A H erm e tic Metal Package FEATURES • • • • • • • • Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance

Contextual Info: T O S H IB A 2SK3128 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSYI 2 S K 3 1 28 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS U nit in mm APPLICATIONS 15.9 MAX.

OM6514SS

Abstract: OM6515SS
Contextual Info: OM6514SS OM6515SS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 8 Am p, N-Channel IG BT In A Herm etic Metal Package FEATURES • Two Isolated IGBTs In A Hermetic SIP Package • High Input Impedance • Low On-Voltage

2SK3128

Contextual Info: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 9.5 mΩ (typ.) l High forward transfer admittance : |Yfs| = 40 S (typ.)

K3128

Abstract: 2SK3128
Contextual Info: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain-source ON resistance : RDS (ON) = 9.5 mΩ (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.)

Contextual Info: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 9.5 mΩ (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.)

CEP04N6

Abstract: 600V,4A DIODE
Contextual Info: CEP04N6/CEB04N6 Feb. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 4A , RDS ON =2.5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.

Contextual Info: OM6508SA OM65Q9SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 500 Volt, 5 And 10 Amp, N-Channel IGBT With a Soft Recovery Diode In A Hermetic Metal Package FEATURES • • • • • • • • • Isolated Hermetic Metal Package

IGBT in resonant converters

Abstract: ceis
Contextual Info: QM6507SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 1000 Volt. 8 A m p. N -C hannel IGBT In A H e rm e tic Metal Package FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off

K3128

Abstract: 2SK3128
Contextual Info: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 9.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 40 S (typ.)

12N60FI

Abstract: 12N60F sth12n60fi 12N60 transistor 12n60 st 12N60 12N-60F STH12N60 12n60 dc GS 069 7.2 24 v
Contextual Info: SGS-THOMSON ELiOT iD SS STH12N60 STH12N60FI N^ CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STH12N60 STH12N60FI d ss 600 V 600 V R D S (o n Id 0.6 n 0.6 £2 12 A 7 A ; ; . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

gc212

Abstract: STH8N80 STH8N80FI STW8N80 C18070
Contextual Info: 7 T 2 t1 2 3 7 OOMSTOO *=554 • S G T H _ SGS-THOMSON LK3TOKS ¿ 5 7 STH8N80/FI STW8N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V STH8N80 STH8N 80FI STW 8N80 ■ . ■ . . . ■ dss 800 V 800 V 800 V RDS on Id

Contextual Info: OM65Û5SA OM65Q6SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 500 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability

53N05

Abstract: STP53N05
Contextual Info: • £Z7 7^2^237 GDMbSll T T3 M S f i T H _ S G S -T H O M S O N [ œ ô jO T ô * S STP 53 N 05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP53N05 . . ■ . . . . . V R D S (o n Id < 0.025 Í2 53 A dss 50 V TYPIC A L RDS(on) = 0.022 Q

Contextual Info: OM6505SA OM65Q6SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 500 Volt. 15 A n d 20 A m p , N - C h a n n e l IGBT In A H e r m e t i c Metal P a c k a g e FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage

9816A

Abstract: IRFV360 K11S
Contextual Info: Data Sheet No. PD-9.816A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFV36Q :n N-CHANNEL 400 Volt, 0.20 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Part Number BV q s s RDS on

buz 71

Contextual Info: SIEMENS BUZ 71 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 71 Vbs 50 V b 14 A flbs<on 0.1 a Package Ordering Code TO-220 AB C67078-S1316-A2 Maximum Ratings Parameter Symbol Continuous drain current

K3128

Abstract: 2SK3128 k312
Contextual Info: 2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3128 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 9.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 40 S (typ.)

Contextual Info: OM651OSC OM6511SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 500 Volt. 20 A n d 30 A m p , N - C h a n n e l IG B T W ith a Soft R ec o v ery Diode In A H e r m e t i c Metal P a c k a g e FEATURES • • • • • • • •

Contextual Info: DC DC Filter & Surge Protection DSF226 Series xppower.com • Up to 200 W Output Power • Active Surge Protection • MIL STD 461 & DEF STAN 59 411 • MIL STD 1275A D • DEF STAN 61 5 Part 6 Issue 6 • MIL STD 810 • 3 Year Warranty Specification Input