OM65Q1ST Search Results

EG430

Abstract: 11R2S
Contextual Info: OM6501ST OM65Q2ST INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-257AA PACKAGE 500 Volt. 5 A n d 10 A m p . N - C h a n n e l IG B T In A H e r m e t i c Metal P a c k a g e FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage

OM6501ST

Contextual Info: OM6501ST OM65Q2ST INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-257AA PACKAGE 500 Volt, 5 A nd 10 A m p , N -C h a n n el IG B T In A H erm e tic M etal P ackag e FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability

Contextual Info: OM6501ST OM6502ST INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-257AA PACKAGE 500 Volt, 5 And 10 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability