MJ 4025 Search Results

Contextual Info: SENSITRON SEMICONDUCTOR SD200SC200A/B/C Technical Data Data Sheet 4025, Rev.- SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:

BUX 127

Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Contextual Info: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B

MJ 4025

Contextual Info: SENSITRON SEMICONDUCTOR SD200SC200A/B/C Technical Data Data Sheet 4025, Rev.- SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

d0147

Contextual Info: IDT79R3051 , 79R3051E IDT79R3052™, 79R3052E IDT79 R3051 /79R3052 INTEGRATED RlSControllers™ Integrated Device Technology, Inc. — On-chip DMA arbiter — Bus Interface minimizes design complexity Single clock input with 40%-60% duty cycle 35 MIPS, over 64,000 Dhrystones at 40MHz

MIPS R3051

Contextual Info: IDT79R3051/79R3052 RISControllers" IDT79R3051 , 79R3051E IDT79R3052™, 79R3052E Integ ra te d D evice Technology, Inc. FEATURES: • Instruction set com patible with IDT79R3000A and IDT79R3001 MIPS RISC CPUs • High level of integration minimizes system cost, power

sirit

Contextual Info: IDT79R3051 , 79R3051E IDT79R3052™, 79R3052E IDT79 R3051 /79R3052 INTEGRATED RlSControllers1'1 Integrated Device Technology, Inc. — On-chip DMA arbiter — Bus Interface minimizes design complexity Single clock input with 40% -60% duty cycle 35 MIPS, over 64,000 Dhrystones at 40MHz

eerl

Abstract: ym oca QQ11
Contextual Info: INTEGRATE» DEVICE SflE D • 4025771 R3081 BLOCK DIAGRAM BrCond 3:2,0 C lock G enerator Unit/ C lock Doubler M aster Pipeline Control System Control C oprocessor Integer CPU Core Floating Point C oprocessor (CP1) (CP0) Exception/Control Registers G eneral Registers

arbiter decoder -1996

Contextual Info: IDT79R3051/79R3052 RlSControllers IDT79R3051™, 79R3051E IDT79R3052”, 79R3052E Integrated Device Technology, Inc. FEATURES: — On-chip DMA arbiter — Bus Interface minimizes design com plexity Single clock input with 40%-60% duty cycle 35 MIPS, over 64,000 Dhrystones at 40MHz

Contextual Info: A dvanced po w er Tec h n o lo g y APT4020BNR 400V 26.0A 0.200 APT4025BNR 400V 23.0A 0.250 Q D S POWER MOS IV« AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS V DSS Parameter APT4020BNR Drain-Source Voltage /\ APT4025BNR

Contextual Info: O D O S A dvanced P ow er Te c h n o lo g y 0 APT4020BNR APT4025BNR i d f 'w t R m o s r ü 400V 26.0A 0.20i> 400V 23.0A 0.25Œ AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS >D All Ratings: Tc = 25°C unless otherwise specified.

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

Contextual Info: •R A dvanced W .\A P o w e r Te c h n o l o g y * APT4020BNR APT4025BNR 400V 26.0A 0.20U 400V 23.0A 0.25Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified.

APT4020BNR

Abstract: APT4025BNR
Contextual Info: A d van ced P o w er Te c h n o lo g y Q D O APT4020BNR APT4025BNR S POWER MOS IV® 400V 400V 26.0A 0.20Í1 23.0A 0.25Q AVALANCHE RATED N -C H AN N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATING S Symbol V DSS 'd Al, Ratinnc. T _ _ OKor. ,

E3P102

Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.

Contextual Info: SIEMENS BUZ 11 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds b ^DS on Package Ordering Code BUZ 11 A 50 V 26 A 0.055 a TO-220 AB G67078-S1301 -A3 Maximum Ratings Parameter Symbol Continuous drain current

HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product

MTP75N03HDL

Abstract: MTP75N03HDL/D
Contextual Info: MOTOROLA Order this document by MTP75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTP75N03HDL HDTMOS E-FET  High Density Power FET Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET LOGIC LEVEL 75 AMPERES

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

MTP75N03HDL

Abstract: MTP75N03HDL/D AN569
Contextual Info: MTP75N03HDL Preferred Device Power MOSFET 75 Amps, 25 Volts, Logic Level N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for

MTP75N03HDL

Contextual Info: MTP75N03HDL Preferred Device Power MOSFET 75 Amps, 25 Volts, Logic Level N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

AD143

Abstract: ad148 ASZ1015 Germanium Power Devices
Contextual Info: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at Type Number ^ 1*0 V ^ CEO y Y ebo y max 32 32 32 - 64 64 64 80 80 50 50 50 32 40 40 40 55 22 22 22 55 80 40 32 32 50 50 50 35 26 26 30 30 32 32 100 100 100 A D Y 10 ADY11 A D Y 12 AD Y13 A D Y 20

Contextual Info: IDT79R3071 IDT79R3071E IDT79R3071 RISController" Integrated Device Technology, Inc. FEATURES Large on-chip caches with user configurability — 16kB Instruction Cache, 4kB Data Cache — Dynamically configurable to 8kB Instruction Cache, 8kB Data Cache

AD149

Abstract: ASZ18 ASZ15 ASZ1015 ASZ16 ADY26 AD148 ASZ1018 AD133 ASZ17
Contextual Info: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at R. j-case °C !W max Outlines 0.35 0.35 0.35 0.35 0.35 0.35 1.5 1.5 1.5 1.5 1.5 1.5 127 127 127 127 127 127 A D 130— 111 — IV —V A D 131— III — IV — V 1 1 5 5 5 0.35 0.35 0.3 0.3