MITSUBISHI RF POWER Search Results

RA60H1317M1

Abstract: FET 4900 mitsubishi rf "RF Power Modules" 175mhz 12.5v 40w RA30H1317M RA13H1317M RA03M8087M RA30H4452M RA35H1516M
Contextual Info: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-026-E Date : 18th April 2003 Rev. date : 15th March ‘05 Prepared : K. Kajiwara Confirmed : T. Okawa SUBJECT: ELECTRO STATIC SENSITIVITY FOR MITSUBISHI RF POWER MODULE RA* series

shinetsu G746 rohs

Abstract: shinetsu G746 G746 sirf iii chip MITSUBISHI APPLICATION NOTE RF POWER
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-006-D th Date : 30 May 2001 Rev. date : 26th Dec. 2006 Prepared : K. Kajiwara T.Okawa Confirmed : T. Okawa SUBJECT: PRECAUTIONS AND RECOMMENDATIONS FOR MITSUBISHI RF POWER DEVICES GENERAL:

mitsubishi rf power selection

Contextual Info: MITSUBISHI RF POWER DEVICE PRECAUTIONS AND RECOMMENDATIONS GENERAL Mitsubishi RF Power Devices designed for mobile and radio, 9.6V, 7.2V for portable radio. For base bias lead or lead portable radio applications have high reliability and good which performance, as they are designed and manufactured under

Contextual Info: MITSUBISHI DISCRETE SC blE ]> 1,24^05^ GG1SE71 T40 H n iT 5 MITSUBISHI RF POWER TRANSISTOR 2SC2797 NPN EPITAXIAL P LA N A R T Y P E DESCRIPTION OUTLINE DRAWING 2SC2797 is a silicon NPN epitaxial planar type transistor designed for RF broad-band power amplifiers in U H F band.

2SC2312

Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb
Contextual Info: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating

rd02mus1

Abstract: AN-UHF-017 146MHz 488-MHz RD02MUS1 equivalent ANUHF017 MITSUBISHI APPLICATION NOTE RF POWER
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-017 Date : 23th Dec. 2002 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD02MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and

RD01MUS1

Abstract: micro strip line MITSUBISHI APPLICATION NOTE RF POWER
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-019 Date : 9th Jan. 2003 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD01MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data with

RD12MVP1

Abstract: RD12MVS1
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034 Date: 10th Feb. 2006 Prepared: E.Akiyama S.Kametani Confirmed: SUBJECT: T.Ohkawa RD12MVP1 135-175MHz RF characteristics data SUMMARY: This application note shows the RF characteristics Frequency Characteristics, Pin vs. Pout

RD07MVS1

Abstract: micro strip line
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-018-B Date : 12th jun. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD07MVS1 RF characteristics data SUBJECT: SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and

RD09MUP2

Abstract: 555 application note
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-UHF-072 Date: 6th Feb. 2006 Prepared: M.Miyashita S.Kametani Confirmed: SUBJECT: T.Ohkawa “RD09MUP2” 400-520MHz RF characteristics data SUMMARY: This application note shows the RF characteristics Frequency Characteristics, Pin vs. Pout

M68732SHA

Contextual Info: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MODULE M68732SHA Silicon MOS FET Power Amplifier, 470-520MHz 6.7W FM PORTABLE PIN: l.Pin :RF INPUT :GATE BIAS SUPPLY 3 .V D D :DRAIN BIAS SUPPLY 4 .P0 :RF OUTPUT

AN-UHF-027-B

Abstract: RD07MVS1 adj 2576 6926 b 946 MITSUBISHI APPLICATION NOTE RF POWER mitsubishi 5247
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-027-B Date : 16th Oct. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD07MVS1 RF characteristics data SUBJECT: SUMMARY: This application note show the RF Wide band DUT characteristics data Po vs. Frequency

Contextual Info: MITSUBISHI RF POWER MODULE M57739C 824~849MHz, 12.5V, 6W, FM MOBILE RADIO PIN : P in ©VCCI VCC2 ®Po ®GND : : : : : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 25T unless otherwise noted) Symbol Vcci Vcc2 Icc

Contextual Info: MITSUBISHI RF POWER MODULE M57788L 400-430MHZ, 12.5V, 40W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dim ensions in mm <5> «Hh PIN : Pin DVCC1 (DVCC2 VCC3 ©Po ®GND : : : : : : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY 3rd. DC SUPPLY RF OUTPUT FIN

transistor t06

Abstract: 828 TRANSISTOR equivalent
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINEDRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.

RD07MVS1

Abstract: RD01MUS1 17mml MITSUBISHI APPLICATION NOTE RF POWER gp 735
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-006 Date : 21th Aug. 2003 Prepared : M.Wada Confirmed : T.Ohkawa RD07MVS1 & RD01MUS1 RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data Po vs. Frequency

transistor tc 144 m57726

Abstract: m57726
Contextual Info: MITSUBISHI RF POWER MODULE M57726 144-148MHz, 12.5V, 43W, FM MOBILE RADIO BLOCK DIAGRAM <f> PIN : CDPin : RF INPUT ®VCC1 : 1st. DC SUPPLY @VCC2 : 2nd. DC SUPPLY @Po : RF OUTPUT ®GND : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25 “C unless otherwise noted

Contextual Info: MITSUBISHI RF POWER MODULE M57704SH 490-512MHz, 12.5V, 13W, FM MOBILE RADIO Rn ©VCCI VCC 2 ®VCC3 ©Po ©GND : : : : : : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY 3rd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 2 5 ‘C unless otherwise noted

Contextual Info: . MITSUBISHI RF POWER MODULE bSMiaSÌ 0Q17475 232 • - M67798LA 144-148MHz, 9.6V, 8W FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM PIN : Pin @VGG VDD ®P0 ®GND : RF INPUT : GATE BIAS SUPPLY : DRAIN BIAS SUPPLY : RF OUTPUT : FIN H46

Contextual Info: MITSUBISHI RF POWER MODULE M57714UH 470-490MHz, 12.5V, 7W, FM MOBILE RADIO PIN : t Rn VCCI ®VCC2 &VCC3 ®PO ® GND : RF INPUT : 1st. DC SUPPLY : 2nd. DC SUPPLY : 3rd. DC SUPPLY ; RF OUTPUT : FIN ABSOLUTE MAXIMUM RATINGS (Tc = 25T: unless otherwise noted)

Contextual Info: MITSUBISHI RF POWER MODULE M67741H 150-175MHz, 12.5V, 30W, FM MOBILE RADIO BLOCK DIAGRAM PIN : Pin : RF INPUT ©VCCI : 1st. DC SUPPLY <S VCC2 : 2nd. DC SUPPLY @P0 : RF OUTPUT GND : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25 X i unless otherwise noted) Symbol

diode gp 429

Abstract: RD01MUS1 RD07MVS1B RD07M RD07MVS AN-900-028
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-028 Date : 6th July. 2007 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: : T.Ohkawa RD01MUS1 & RD07MVS1B 2-Stage amplifier RF performance f= 740-870MHz. SUMMARY: This application note shows the RF Wide band characteristics data

Contextual Info: MITSUBISHI RF POWER MODULE M57704EL 335-360MHZ, 12.5V, 13W, FM MOBILE RADIO P in VCC! ®VCC2 ®VCC3 ®PO ®GND : : : : : : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY 3rd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted

RD07MVS1

Abstract: RD01MUS1
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-008 Date : 7th Oct. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 2Stage amplifier RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data