MISMATCH LOAD Search Results

AN1232

Abstract: RF Transistor Selection RF POWER TRANSISTOR NPN USE OF TRANSISTOR SD2921
Contextual Info: AN1232 Application note Ruggedness improvement of RF DMOS devices Introduction RF amplifiers often experience impedance mismatch between output and load. Such an impedance mismatch generates a reflected wave towards the RF power transistor, making a much more stringent working environment for the transistor. Working conditions grow critical

AN1232

Abstract: transistor working SD2921 rf power transistor
Contextual Info: AN1232 APPLICATION NOTE RUGGEDNESS IMPROVEMENT OF RF DMOS DEVICES A. Grimaldi - A. Schillaci - A. Vitanza - E. Romano 1. ABSTRACT RF amplifiers often experience impedance mismatch between output and load. Such an impedance mismatch generates a reflected wave towards the RF power transistor, making a much more stringent

EL7155C

Abstract: EL7155CN EL7155CS
Contextual Info: High-Performance Pin Driver Features General Description • Clocking speeds up to 40 MHz • 15ns tr/tf at 2000 pF CLOAD • 0.5ns Rise and Fall Times Mismatch • 0.5ns TON-TOFF Prop Delay Mismatch • 3.5pF Typical Input Capacitance • 3.5A Peak drive

AN1008

Contextual Info: AN1008 APPLICATION NOTE Address Pin Labeling Mismatch The purpose of this application note is to discuss differences between SRAM vendors’ package pinouts. This paper will focus specifically on Address pins and will investigate whether the labeling mismatch between vendors will make one vendor's part

EL7155C

Abstract: EL7156C EL7156CN EL7156CS EL7156
Contextual Info: High Performance Pin Driver Features General Description • Clocking speeds up to 40 MHz • 15ns tr/tf at 2000 pF CLOAD • 0.5ns Rise and Fall Times Mismatch • 0.5ns TON-TOFF Prop Delay Mismatch • 3.5pF Typical Input Capacitance • 3.5A Peak drive

EL7155C

Abstract: EL7156C EL7156CN EL7156CS EL7156CS-T13 EL7156CS-T7 JESD51-3 EL7156
Contextual Info: EL7156C EL7156C High Performance Pin Driver Features General Description • Clocking Speeds up to 40MHz • 15ns tr/tf at 2000pF CLOAD • 0.5ns Rise and Fall Times Mismatch • 0.5ns TON-TOFF Prop Delay Mismatch • 3.5pF Typical Input Capacitance • 3.5A Peak Drive

EL7155C

Abstract: EL7155CN EL7155CS EL7155CS-T13 EL7155CS-T7 JESD51-3
Contextual Info: EL7155C EL7155C High-Performance Pin Driver Features General Description • Clocking Speeds up to 40MHz • 15ns tr/tf at 2000pF CLOAD • 0.5ns Rise and Fall Times Mismatch • 0.5ns TON-TOFF Prop Delay Mismatch • 3.5pF Typical Input Capacitance • 3.5A Peak Drive

Contextual Info: High-Performance Pin Driver Features General Description • Clocking speeds up to 40 MHz • 10 ns tr/tf at 1800 pF CLOAD • 0.5ns Rise and Fall Times Mismatch • 0.6ns TON-TOFF Prop Delay Mismatch • 3.5pF Typical Input Capacitance • 3.5A Peak drive

adaptive filter noise cancellation

Abstract: 0A80 1D20 2A21 2B39 modem circuit echo
Contextual Info: Am79C02/03/031 DSLAC Devices Adaptive Balance Feature Application Note The cause of four-wire echo in subscriber linecards is the mismatch of the two-wire impedances and the echo balance circuit. Because of the mismatch, much of the energy from the received signal is

LT5517

Abstract: LT5517EUF MABAES0054 MO-220 06033A102JAT1A 06033A3R3KAT2A MAG CS2 EMK107B LT5503
Contextual Info: LT5517 40MHz to 900MHz Quadrature Demodulator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO RF Input Frequency Range: 40MHz to 900MHz High IIP3: 21dBm at 800MHz High IIP2: 58dBm at 800MHz I/Q Gain Mismatch: 0.3dB Max I/Q Phase Mismatch: 0.7°

327-40

Abstract: EPG 20 how to make echo circuit adaptive filter noise cancellation 0A80 1D20 2A21 2B39 modem circuit echo
Contextual Info: Am79C02/03/031 DSLAC Devices Adaptive Balance Feature Application Note Advanced Micro Devices The cause of four-wire echo in subscriber linecards is the mismatch of the two-wire impedances and the echo balance circuit. Because of the mismatch, much of the energy from the received signal is

LT5503

Contextual Info: LT5517 40MHz to 900MHz Quadrature Demodulator FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO RF Input Frequency Range: 40MHz to 900MHz High IIP3: 21dBm at 800MHz High IIP2: 58dBm at 800MHz I/Q Gain Mismatch: 0.3dB Max I/Q Phase Mismatch: 0.7°

MBH100

Abstract: SOT122A BLX94C
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification File under Discrete Semiconductors, SC08b 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLX94C FEATURES DESCRIPTION • Withstands full load mismatch

BLX94C

Abstract: MBH100 BLX94
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLX94C FEATURES DESCRIPTION • Withstands full load mismatch NPN silicon planar epitaxial transistor primarily intended

2N6364

Abstract: UHF TRANSISTOR 100-400MHz
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N6364 Silicon NPN power UHF transistor 2N6364 is designed for use in the 100400Mhz frequency range for wideband power amplifier applications aircraft and ship electronics, etc. in severe load mismatch conditions. Output Power:

2N6362

Abstract: 100-400MHz
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N6362 Silicon NPN power UHF transistor 2N6362 is designed for use in the 100400Mhz frequency range for wideband power amplifier applications aircraft and ship electronics, etc. in severe load mismatch conditions. Output Power:

Philips 4312 020

Abstract: ferroxcube wideband hf choke transistor 4312 BLT53 philips Trimmer 60 pf philips capacitor 470 philips transistor UHF POWER TRANSISTOR UHF POWER transistor d 1991 ar
Contextual Info: 711002b Q O b E b m PHILIPS INTERNATIONAL UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability • Withstands full load mismatch. IPHIN 0G1 Product specification

2N6364

Abstract: 75W NPN 100-400MHz 2N636
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N6364 Silicon NPN power UHF transistor 2N6364 is designed for use in the 100400Mhz frequency range for wideband power amplifier applications aircraft and ship electronics, etc. in severe load mismatch conditions. Output Power:

100-400MHz

Abstract: 2N6362 UHF TRANSISTOR
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N6362 Silicon NPN power UHF transistor 2N6362 is designed for use in the 100400Mhz frequency range for wideband power amplifier applications aircraft and ship electronics, etc. in severe load mismatch conditions. Output Power:

Contextual Info: AWT6167 GSM900/DCS Dual Band Power Amplifier Module With Integrated Power Control ADVANCED PRODUCT INFORMATION - Rev 0.0 FEATURES • • Reduced RF current sensitivity to load mismatch 4:1 VSWR Integrated Vreg (regulated supply) Harmonic Performance ≤ -25 dBm

BJE 148 capacitor

Abstract: A213 SOT122A BJE 147
Contextual Info: N AUER PHILIPS/DISCRETE bbSa'm b'JE D ÜD2Ô7T5 BLU10/12 UHF power transistor FEATURES • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Withstands full load mismatch. E OT • QUICK REFERENCE DATA

uA740

Abstract: PHILIPS OQ 2222 SOT123 Package UA740 8 pin capacitor polyester philips 2222 311 capacitor philips International Power Sources philips Trimmer 60 pf sot123 437S
Contextual Info: Product specification Philips Semiconductors BLF225 VHF power MOS transistor PHILIPS INTERNATIONAL 711005b GG437S7 44G M P H I N 5bE » PIN CONFIGURATION FEATURES • Easy power control • Good thermal stability • Withstands full load mismatch. D ESCRIPTIO N

transistor tt 2222

Abstract: TT 2222 enamelled copper wire tables 2222 123 capacitor philips pu enamelled copper wire TL 2222 4312 020 36640 ferroxcube wideband hf choke 22 nF, 63 SOT123 Package
Contextual Info: Philips Semiconductors Product specification HF power MOS transistor PHILIPS T -3 ^ -// INTERNATIONAL FEATURES 5bE D I 711002b DOMBbTM BLF145 437 IPHIN PIN CONFIGURATION • High power gain • Low noise figure • Good thermal stability • Withstands full load mismatch.

Contextual Info: AWT6166 GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • • Reduced RF current sensitivity to load mismatch 4:1 VSWR Integrated Vreg (regulated supply) Harmonic Performance ≤ -25 dBm