MICRON PART MARKING DECODER Search Results

MT47H32M16

Abstract: micron marking MT47H FBGA 320 DDR2 16 meg x16 micron FBGA SDRAM marking micron ddr2 FBGA 84 32M16 Micron 32M16
Contextual Info: Micron Confidential and Proprietary 512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 – 32 Meg x 4 x 4 banks MT47H64M8 – 16 Meg x 8 x 4 banks MT47H32M16 – 8 Meg x 16 x 4 banks For functional and parametric specifications, refer to the product data sheet on Micron’s Web site: www.micron.com

Mobile DDR SDRAM

Contextual Info: Preliminary‡ 512Mb: x16, x32 Mobile DDR SDRAM AT Addendum Features Mobile DDR SDRAM AT Addendum MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS

64M16

Abstract: MT46H32M32Lf MT46H64M16LF 1GB-x16 uA78
Contextual Info: 1Gb: x16, x32 Mobile DDR SDRAM AT Addendum Features Mobile DDR SDRAM Addendum MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)

micron lpddr

Abstract: 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged
Contextual Info: 128Mb: x16, x32 Mobile LPDDR SDRAM AT Addendum Features Mobile LPDDR SDRAM AT Addendum MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options Marking • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data DQS

Contextual Info: 256Mb: x16, x32 Mobile LPDDR SDRAM AT Addendum Features Mobile LPDDR SDRAM AT Addendum MT46H16M16LF – 4 Meg x 16 x 4 banks MT46H8M32LF – 2 Meg x 32 x 4 banks Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data DQS

D9KG

Abstract: marking code micron label marking aa5 152-Ball M2P20 MT46H64M32L2CG-6 152-Ball PoP SMD marking code B10 AA5 mark diagram smd marking code M21
Contextual Info: Preliminary‡ 152-Ball x32 LPDDR-SDRAM PoP TI-OMAP Features LPDDR-SDRAM 152-Ball Package-on-a-Package (PoP) TI-OMAP MT46HxxxMxxLxCG Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)

micron fbga code

Abstract: MT47H128M8
Contextual Info: 1Gb: x4, x8, x16 DDR2 SDRAM Addendum Features DDR2 SDRAM Data Sheet Addendum MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • •

CSN-11

Abstract: MT46H64M32L2KQ 168B micron lpddr lpddr smd code marking CK BA121 Marking Code TI OMAP micron marking code information marking code micron label
Contextual Info: Preliminary‡ 168-Ball x32 Mobile LPDDR PoP TI OMAP Addendum Features Mobile LPDDR Addendum 168-Ball Package-on-Package (PoP) WFBGA TI OMAP MT46HxxxMxxL2KQ Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS)

MT29C1G12

Abstract: mt29c1g12ma MT29C1G12M MT29C1G smd code AA5 SMD MARKING CODE b21 MT29C2G24MAKLACG-6 smd code U21 marking aa5 mt29c1g1
Contextual Info: Preliminary‡ 152-Ball NAND Flash and LP-DRAM PoP TI OMAP MCP Features NAND Flash and LP-DRAM 152-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package

MT29C2G24m

Abstract: MT29C2G48 MT29C4G48M SMD MARKING CODE h23 MT29F4G16ABC JW256 MT29F4G16AB MT29C2G24MAKLAJG-6 MCP LPDDR 1Gb 512Mb marking k22 SMD
Contextual Info: Preliminary‡ 168-Ball NAND Flash and LP-DRAM PoP TI-OMAP MCP Features NAND Flash and LP-DRAM 168-Ball Package-on-a-Package (PoP) Combination Memory (TI OMAP ) Features • • • • • • Figure 1: Micron NAND Flash and LP-DRAM components RoHS-compliant, “green” package

MT29C2G24MAKLAJG-75 IT

Abstract: MT29C2G24MAKLAjg JW256
Contextual Info: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components

MT46H64M32

Abstract: marking k22 SMD pop 168 U22-T23 marking code micron label micron lpddr SMD marking code B10 SMD CODE aa23 AB22-AB23 AC18-AC19
Contextual Info: Preliminary‡ 168-Ball x16, x32 LPDDR-SDRAM PoP TI OMAP Features LPDDR-SDRAM 168-Ball Package-on-a-Package (PoP) TI OMAP MT46HxxxMxxLxJG Features Options • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR)

marking code micron label

Contextual Info: ADVANCE‡ 64Mb MULTIBANK ASYNC/PAGE FLASH 16Mb ASYNC CellularRAM MEMORY FLASH AND CellularRAM COMBO MEMORY MT28C64416W18AFY Low Voltage, Wireless Temperature Features Figure 1: 68-Ball FBGA Stacked die Combo package • Includes one 64Mb Flash device • Includes one 16Mb CellularRAM device

MT41K512M16

Abstract: 96 ball fbga thermal resistance micron MT41K256M16 DDR3L 63 ball fbga thermal resistance micron micron marking code information marking micron MT41K256M16 DDR3 impedance 1m x16 SDRAM MICRON
Contextual Info: 8Gb: x16 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K512M16 – 32 Meg x 16 x 8 Banks Description Options Marking • Configuration – 32 Meg x 16 x 8 banks x 2 ranks • FBGA package Pb-free – 96-ball FBGA (10mm x 14mm x 1.2mm)

Micron flash

Abstract: marking code micron label marking W18
Contextual Info: PRELIMINARY‡ 64Mb MULTIBANK BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C64416W18/W30A PREVIEW‡‡ MT28C64432W18/W30A MT28C64464W18/W30A Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA

MT41K256M16

Abstract: MT41K512M16 8Gb DDR3 SDRAM twindie ddr3 udqs DDR3 timing diagram
Contextual Info: Preliminary‡ 8Gb: x16 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K512M16 – 32 Meg x 16 x 8 Banks Description Options Marking • Configuration – 32 Meg x 16 x 8 banks x2 ranks • FBGA package Pb-free – 96-ball FBGA (10mm x 14mm x 1.2mm) Rev. E

w18 SMD

Abstract: W18 SMD MARKING CODE INTEL flash part MARKING marking code micron label cub smd Flash Controller Micron micron part marking decoder
Contextual Info: 64Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C64416W18/W30A ADVANCE‡‡ MT28C64432W18/W30A MT28C64464W18/W30A Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA

MT41K512M16TNA-125

Abstract: MT41K512M16TNA MT41K512M16TNA125 MT41K MT41K512M16 512M16 MT41K256M16 micron marking code information MT41K256M16 SPD 96-ball FBGA
Contextual Info: 8Gb: x16 TwinDie DDR3L-RS SDRAM Description TwinDie 1.35V DDR3L-RS SDRAM MT41K512M16 – 32 Meg x 16 x 8 Banks Description Options Marking • Configuration – 32 Meg x 16 x 8 banks x 2 ranks • FBGA package Pb-free – 96-ball FBGA (10mm x 14mm x 1.2mm) Rev. E

MT41K512M16TNA-125

Abstract: MT41K256M16 SPD 512M16 MT41K256M16 MT41k micron
Contextual Info: Advance‡ 8Gb: x16 TwinDie DDR3L-RS SDRAM Description TwinDie 1.35V DDR3L-RS SDRAM MT41K512M16 – 32 Meg x 16 x 8 Banks Description Options Marking • Configuration – 32 Meg x 16 x 8 banks x 2 ranks • FBGA package Pb-free – 96-ball FBGA (10mm x 14mm x 1.2mm) Rev. E

Contextual Info: PRN256M8V79DG8GQF-125E DDR3 SDRAM PRN256M8V79DG8GQF-125E PRN 256M8 – 32 Meg x 8 x 8 Banks Features •                  Vdd = VddQ = 1.5V +0.075V 1.5V center-terminated push / pull I/O Differential bidirectional data strobe

MT41K512M16TNA-125

Abstract: MT41K512M16 MT41K256M16 SPD MT41K512M16TNA 1m x16 SDRAM MICRON MT41K256M16 MT41k micron
Contextual Info: Advance‡ 8Gb: x16 TwinDie DDR3L-RS SDRAM Description TwinDie 1.35V DDR3L-RS SDRAM MT41K512M16 – 32 Meg x 16 x 8 Banks Description Options Marking • Configuration – 32 Meg x 16 x 8 banks x 2 ranks • FBGA package Pb-free – 96-ball FBGA (10mm x 14mm x 1.2mm) Rev. E

MT41K256M32

Abstract: MT41K 256M32 MT41K256M16 MT41K256M32SGB-125M MT41K256M3 MT41K256M MT41K256 MT41K256M16 SPD FBGA DDR3 x32
Contextual Info: Preliminary‡ 8Gb: x32 TwinDie DDR3Lm SDRAM Description TwinDie 1.35V DDR3Lm SDRAM MT41K256M32 – 32 Meg x 32 x 8 Banks Description Options Marking • Configuration – 32 Meg x 32 x 8 banks • FBGA package Pb-free – 136-ball FBGA (10mm x 14mm x 1.2mm) Rev. E

MICRON fBGA package code

Abstract: INTEL flash part MARKING marking code micron label MT28C64432
Contextual Info: PRELIMINARY‡ 64Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C64416W18/W30A PREVIEW‡‡ MT28C64432W18/W30A MT28C64464W18/W30A Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA

MT41K256M32

Abstract: MT41K256M16 SPD FBGA DDR3 x32 MT41K256M32SLD-125M 136-Ball MT41K256M32SLD-125 MT41K256M3 MT41K 256M32 MT41K256M16
Contextual Info: Advance‡ 8Gb: x32 TwinDie DDR3L-RS SDRAM Description TwinDie 1.35V DDR3L-RS SDRAM MT41K256M32 – 32 Meg x 32 x 8 Banks Description Options Marking • Configuration – 32 Meg x 32 x 8 banks • FBGA package Pb-free – 136-ball FBGA (10mm x 14mm x 1.2mm) Rev. E