memory 9652
Contextual Info: FOR IMMEDIATE RELEASE Contact: Grant Jones Micron Technology, Inc. 208 368-4400 Web Site URL <http://www.micron.com> Fax-on-demand: (800) 239-0337 MICRON TECHNOLOGY, INC., REPORTS RESULTS FOR THE THIRD FISCAL QUARTER OF 2000 Boise, Idaho, June 22, 2000 - Micron Technology, Inc., today reported quarterly net
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UM 9515
Abstract: D5A-3210 D5A-1100 D5A-2100 D5A-3200 D5A-7400 plunger grease OMRON m5-1 D5A-3310 E39-F4
Contextual Info: High-Precision Switch D5A High-Precision Switch for Detecting Micron Unit Displacement H H 1-micron or 3-micron repeat accuracy H 24 VDC solid state output or 12 VDC/ 24 VAC contact output H Solid state output model has LED indicator for ease of monitoring operation
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1-800-55-omronum 9515d5a-3210d5a-1100+7d5a-2100d5a-3200d5a-7400plunger greaseomron m5-1d5a-3310e39-f4
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transistor f422
Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for
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50-micronpd658xxtransistor f422transistor f423+8f422 transistortransistor f421bv09f423fet 13187rj4bl442bvoe
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IDT ZBT SRAM 1994
Abstract: samsung 10K filing SEC semico 2000F PC2100 general architecture of ddr sdram PC133 registered reference design MT28S4M16 DDR SDRAM Component Micron technology micron dram code
Contextual Info: B u y e r s Volume 7, Issue 4 Product and service news for Micron customers 4Q00 MBN Extra: Micron Unveils New Corporate Brand “Micron Buyers News Extra” is your opportunity to hear from Micron’s management team This newsletter contains forwardlooking statements regarding the company and the industry. These particular
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idt zbt sram 1994samsung 10k filing secsemico2000f+6pc2100general architecture of ddr sdrampc133 registered reference designmt28s4m16ddr sdram component micron technologymicron dram code
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Atmel oak dsp core
Abstract: block diagram for barrel shifter PPAP "saturation arithmetic"
Contextual Info: Features • 16-bit Fixed-point Digital Signal Processing DSP Core • Low-power Consumption: • • • • • • • • • • • – 1 mW/MIPS on 0.25-micron CMOS, 2.5V – 0.6 mW/MIPS on 0.20-micron CMOS, 1.8V High Performance: – 80 MIPS at 160 MHz (Typical) on 0.25-micron CMOS, 2.5V
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16-bit25-micron20-micron0876f+4atmel oak dsp coreblock diagram for barrel shifterppapsaturation arithmetic
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bv0T
Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
Contextual Info: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high
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50-micronpd658xxbv0tf423+8fv06rj4b83yl-9164bsingle-port ramb00jtransistor f423bewfdiode ru4d
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F611
Abstract: L302 L611
Contextual Info: NEC Electronics Inc. CMOS-8LH 3.3-Volt, 0.5-Micron CMOS Gate Arrays Preliminary April 1996 Description Figure 1. CMOS-8LH Package Options: BGA & QFP NEC's CMOS-8LH gate-array family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high
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35-microna11169eu1v0ds00f611l302+1l611
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nec 2561 equivalent
Abstract: f bj04 TBA 931 765 floppy disk controller 78K3 L435 f305 F423 nec 2401 bg05
Contextual Info: CB-C7, 5-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. August 1993 Description CB-C7 cell-based product family is a 0.8-micron drawn process with two- or three-layer metalization and is offered in 22 I/O pad ring step sizes. It is ideal for applications such
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nec 2561 equivalentf bj04tba 931765 floppy disk controller+678k3l435f305f423nec 2401bg05
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Pc 9571
Contextual Info: FOR IMMEDIATE RELEASE Contact: Grant Jones Micron Technology, Inc. 208 368-5781 gcjones@micron.com Web Site URL <http://www.micron.com> Fax-on-demand: (800) 239-0337 MICRON TECHNOLOGY, INC., REPORTS RECORD RESULTS FOR FOURTH FISCAL QUARTER AND FISCAL YEAR 2000
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0.25-um CMOS standard cell library inverter
Abstract: CMOS GATE ARRAY stmicroelectronics OLIVETTI
Contextual Info: CB55000 Series HCMOS7 Standard Cells FEATURES • ■ ■ ■ ■ ■ 0.25 micron drawn 0.20 micron effective channel length process , six layers of metal connected by fully stackable vias and contacts, Shallow Trench Isolation, low resistance, salicided
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cb550000.25-um cmos standard cell library invertercmos gate array stmicroelectronicsolivetti |
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d 65632
Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
Contextual Info: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products
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d 6563265612 necl302cmos transmission gate specifications+4nec cmoscmos-5 necopencad cmos block library700-207
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CMOS
Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
Contextual Info: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.
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cmoshv 102 mos fet transistorvaractor diode model in adsbsim3+6ads varactor diode0.18 micron 1.8v pspice modelbsim3v3bsim3 modelbsim3 model for 0.18 micron technology for hspicen-channel jfet 100v depletion
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NEC V30MX
Abstract: 8255a Max mode system in 8086 microprocessor v 12719 40673 71055 Rambus ASIC Cell 40673 cmos marking code C76 verilog code for 8254 timer IC Ensemble
Contextual Info: CB-C8 3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. July 1994 Description Figure 1. Typical CB-C8 Series Cell-Based ASIC NEC’s 3-volt CB-C8 cell-based ASIC series are ultra-high performance sub-micron CMOS products built within the OpenCAD Design SystemTM of NEC. The family allows
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nec v30mx8255a max mode system in 8086 microprocessorv 1271940673+671055rambus asic cell40673 cmosmarking code c76verilog code for 8254 timeric ensemble
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uPD65801
Abstract: uPD65800 UPD65804
Contextual Info: CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, sub micron gate arrays, targeted for applications requiring e xtensive in te g ra tio n and high speeds. The device
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h27sssupd65801upd65800upd65804 |
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TF-680
Abstract: L302 FV09 macros in embedded computing
Contextual Info: DATA SHEET QB-8 / QB-8E 3.3 Volt , 0.44-Micron Gate-Array Description NEC’s 3.3V QB-8 family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring high speeds and low power dissipation. The QB-8 family offers not
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44-microntf-680l302fv09+1macros in embedded computing
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spice model Tunnel diode
Abstract: dpsN TUNNEL DIODE spice model
Contextual Info: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation
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D882D
Abstract: rendition
Contextual Info: INSIDE/out a quarterly newsletter for shareholders Contents August 1998 In the News Micron to Purchase Memory Business of Texas Instruments, Inc. in the news 1 did you know? 3 latest products 3 in the community On June 18, Micron Technology, Inc., NYSE: MU and Texas
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0.6 um cmos process
Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets
Contextual Info: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation
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0.6 um cmos processbsim3trench mos schottky rectifiermicron power resistor mos+6bsim3 soipmos60v-20micron resistor mosmos rm3p-channel depletion mosfets
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PALMDSPCORE
Contextual Info: Features • 16-bit Fixed-point Advanced Digital Signal Processing DSP Core • High Performance: • • • • • • • • • • • • • – 210 MHz (typical) on 0.18-micron CMOS, 1.8V – 3800 MOPS (3.8 GOPS) - Peak Performance on 0.18-micron CMOS
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MIPS32 cache
Abstract: 4KEC MIPS32 Mips MIPS32 application MIPS64 MIPS32 memory interface MIPS32 instruction set
Contextual Info: FlexCore MIPS32 4KEc™ 32-bit RISC Processor Cores OVERVIEW FEATURES AND BENEFITS LSI Logic offers FlexCore MIPS32 4KEc processor cores available on both our Gflx™ 0.11 micron drawn and G12™ 0.18 micron (drawn) high performance process technologies, and fully configured to individual customer needs.
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mips32tm32-bitmips32g12tm+7mips32 cache4kecmipsmips32 applicationmips64mips32 memory interfacemips32 instruction set
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netronics
Abstract: D link adsl modem board Hitachi Stacked CSP Stanford plasma tv ic fujitsu lvds standard Plasma Display Panel PLASMA tv datasheet MB86060 MB86613
Contextual Info: F A L L 2 0 0 0 Fujitsufocus The News on the Latest Semiconductor Technologies and Products From Fujitsu Microelectronics, Inc. Revolutionary 0.11 Micron Technology A breakthrough in ASIC solutions, Fujitsu’s new 0.11 micron process technology combines the lowest power, fastest transistor and most compact memory in the
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32-bitcorp-nl-20840-09/2000netronicsd link adsl modem board+8hitachi stacked cspstanfordplasma tv icfujitsu lvds standardplasma display panelplasma tv datasheetmb86060mb86613
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LPDDR2 PoP
Abstract: LPDDR2 micron lpddr2 lpddr2 datasheet 216-ball LPDDR lpddr2 nand mcp Micron 512MB nand FLASH 136-Ball 168-ball LPDDR Micron NAND
Contextual Info: A Perfect Match for Matchless Performance Micron Multichip Packages Form Factor, Speed, Power. Choose All That Apply. Form factor, speed, power—your mobile customers want all three. With Micron’s MCPs, you can respond to customers’ everincreasing demands without compromising leading-edge performance. Mix and match devices, configurations, and package
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lpddr2 poplpddr2micron lpddr2lpddr2 datasheet+6216-ball lpddrlpddr2 nand mcpmicron 512mb nand flash136-ball168-ball lpddrmicron nand
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northbridge circuit pentium 4
Abstract: intel i5 block diagram cache organization of intel 8086 430TX LM75 430tx intel INTEL 430TX INTEL confidential pentium temperature sensor interface with 8086 pb sram
Contextual Info: INTEL PENTIUM PROCESSOR WITH MMX TECHNOLOGY MOBILE MODULE ON .25 MICRON n n n n n Intel Pentium® Processor with MMX™ Technology on .25 Micron running at 166/200/233/266 MHz n Second-level cache of pipeline burst SRAM Burst read/write at 3-1-1-1; back-to-back
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430txnorthbridge circuit pentium 4intel i5 block diagramcache organization of intel 8086+6lm75430tx intelintel 430txintel confidential pentiumtemperature sensor interface with 8086pb sram
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CMOS-6A
Abstract: F223 65630 F304 f422 F501 MOS l442 bt08 700201 L421 Marking
Contextual Info: NEC CM OS-6/6 A 1.0-MICRON CMOS g a t e a r r a y s NEC Electronics Inc. PRELIM INARY Description February 1990 Figure 1. Sample CMOS-6 Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A are ultra-high performance, sub-micron channel length CM OS p ro du cts crea ted fo r h ig h -in te g ra tio n A S IC
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ip-8090cmos-6af22365630+7f304f422f501 mosl442bt08700201l421 marking
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