MICRO Search Results

UM5583

Abstract: UM55 SPKP rs 355 integrated circuits 5583H
Contextual Info: UMC UM5583 3 Sec Recording / Playback 1C Features • "BEEP" sound indicates to start recording and memory full for manual playback ■ Built-In AGC Automatic Gain Control to enlarge input dynamic range ■ Built-in low pass filter ■ Built-in microphone amplifier

47c820

Contextual Info: TOSHIBA UC/UP 54E J> • TORTEMT 0 0 n 4 7 Q 524 « T O S S ' TOSHIBA TMP47P820 CMOS 4-BIT MICROCONTROLLER TMP47P820F The 47P820 is the OTP microcontroller with 64kbits PROM. For program operation, the programming is achieved by using with EPROM programmer (TMM2764AD type) and adapter socket (BM 1 112).

Low Drop Out Regulators

Abstract: 7585C DIL 16
Contextual Info: o UCC2930-3\UCC3930-3 IIMTKORATKO C IR C U IT S ADVANCED INFORMATION UNITRODE Cellular Telephone Power Converter DESCRIPTION FEATURES BiCMOS Low Power RF/Cellular power management Negative 2.5 Volt @ 5 m A regulator for GaAs MESFET Separate Micro-power 3.3 V logic

Contextual Info: TLC339M, TLC339I, TLC339C QUADRUPLE MICROPOWER LinCMOS COMPARATORS D3135, DECEMBER 1986-R EV ISED FEBRUARY 1989 • Very Low Power. . . 200 jjiW Typ at 5 V T LC 339M . . . J PACKAGE TLC339I. TLC339C . . . D. J, OR N PACKAGE • Fast Response Time . . . 2.5 |xs Typ with

Contextual Info: TOSHIBA TMP47C337AN CMOS 4-Bit Microcontroller The 47C 337A is based on the TLCS-47 CMOS series. The 47C 337A has On-screen display circuit OSD to display bar which indicate channel or volume on TV screen, A/D converter (Comparator) input, D/A converter output which is suitable for

47C443N

Abstract: 47C443 443-T 47C243N p100101 210B-6F
Contextual Info: TOSHIBA TMP47C243/443 CMOS 4-BIT MICROCONTROLLER TMP47C243N, TMP47C443N TMP47C243M, TMP47C443M TMP47C243DM, TMP47C443DM The 47C243/443 are the high speed and high performance 4-bit single chip microcomputers, w ith 8-bit A/D converter, 8-bit serial interface, pulse outp u t and zero-cross detector based on the TLCS-470 series.

TIM1414-4LA-371

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation

Contextual Info: DIRECTIONAL COUPLER .19 MAX IRAK MICROWAVE DIRECTIONAL COUPLER CPL / 1 0 B E - 0 8 SPECIFICATIONS: FREQUENCY LOSS COUPLING VSWR DIRECTIVITY POWER IN O- -O OUT TR4K MICROWAVE MATERIAL □ STANDARD □ SPECIAL • » o • BASE COVER MARKING FINISH FR— 4 VECTRA

toshiba sdip64 470

Contextual Info: TOSHIBA TMP47P870N CMOS 4-Bit Microcontroller For program operation, the programming is achieved by using with EPROM programmer TMM2764AD type and adapter socket. TMP47P870N The 47P870 is the OTP microcontroller with 64kbits PROM. Parts No. TMP47P870N The function of this device is exactly same as the

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pinch-off Voltage Saturated Drain Current Gate-SourceBreakdown Voltage Thermal Resistance MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000

POUT315

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc a t Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single C arrier Level BROAD BAND INTERNALLY MATCHED

TMPZ84C011

Abstract: TMPZ84C015BF6 TMPZ84C015BF-6 TMPZ84C011B TMPZ84C011BF-6 TMPZ84C011BF TMPZ84C011BF6 TMPZ84C015BF TMPZ84C810AF-6 TRD-100
Contextual Info: 8-Bit Microprocessor & Peripheral LSI TLCS-85 Family NMOS X44 Type No. Min. Inst. Execu­ tion time (ms) Function Max Supply Current (mA) Frequency (MHz) No. of Pins TMP8085AP-2 Microprocessor 0.8 170 5 40 ♦TMP8085AHP-2 Microprocessor 0.8 135 5 40 Notes) Postfix P: Plastic standard DIP (DIP), * : Supply voltage: 4.5-5.5V; Supply voltage: 4.75-5.25V, Operating temperature: 0~70”C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package

TGF1350

Contextual Info: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation

TMP47C637N

Abstract: analog rgb 15 pin
Contextual Info: TOSHIBA TMP47C637/837 CMOS 4-BIT MICROCONTROLLER TMP47C637N, TMP47C837N The 47C637/837 are based on the TLCS-470A series. The 47C1237/1637 have on-screen display circuit OSD to display characters and marks which indicate channel or tim e on TV screen, A/D converter (Conparator) input,

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r - PidB = 39-5 d B m at 5.9 G H z to 6.4 GHz

Contextual Info: Texas Instruments Microwave Military Components TGM8014 Carrier Plate Assembly Product Features • 0.6-watt average output power at 1-dB gain compression ■ 6 to 18 GHz bandwidth ■ Automated assembly ■ Selectable gate biasing ■ 100% RF screening Product Description

CSA8.00MT

Contextual Info: TO SH IBA TMP47C215/415 CMOS 4-BIT MICROCONTROLLER TMP47C215N TMP47C415N The 47C215/415 is a high speed and high performance 4-bit single chip microcomputer, integrating high current output port and the 4 bit A/D conversion input based on the TLCS-470 series.

47C400B

Abstract: 47c200b 47C101
Contextual Info: TOSHIBA TMP47C990E, TMP47C990G CMOS 4-Bit Microcontroller TMP47C990E, TMP47C990G The 47C990, which is equipped with an EPROM as program memory, is a piggyback type evaluator chip used for develop­ ment and operational confirmation of the 47C200B/400B and

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TRKMS037 *T R K M S 0 3 7 * l/Q - .0 2 5 .18 MAX MODULATOR STYLE - 0 9 PACKAGE TRAK MICROWAVE l/Q SPECIFICATIONS MODULATOR LO FREQUENCY LO POWER LEVEL M IQ /3 F F - 0 9 C INSERTION LOSS l/Q l/Q RATE LEVEL 1.8 - 2 .0 GHz + 10 dBm MAX 10 dB MAX DC - 10 MHz

microstep drive STEPPER MOTOR

Abstract: 1045V "Stepper Drive" UC3770
Contextual Info: Motor Controls Stopper Motors UC3717A Stepper Motor Drive Circuit • Improved version of industry standard • Full step, half-step and micro-step capability • Output currents up to 1.2A • Supply voltage 10-45V • Built-in fast recovery Schottky commutating diodes

TC160G

Abstract: toshiba LGA Nand TC170C14 TC26SC TC170C1 TC170C29
Contextual Info: TOSHIBA TC170C CMOS Standard Cell 0.7\xm , 5.0V ASICs The 0.7nm, 5V TC170C allows higher area efficiency, system performance and device integration with lower power than previous generation 5V standard cell products Benefits • Advanced 0.7 micron CMOS process with fast 250ps gate

82C8167

Abstract: UM82C8167 UM82C8
Contextual Info: UMC UM82C8167 S S 2 S S S 2 S 2 Î Real-Time Clock RTC eatures Microprocessor compatible (8-bit data bus) Milliseconds through month counters 56 bits of RAM with comparator to compare the real time counter to the RAM data 2 IN TERRU PT OUTPUTS with 8 possible interrupt