MGW Search Results

Contextual Info: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G W 12N 120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 4 7

Contextual Info: MOTOROLA Order this document by MGW20N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 20N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

Contextual Info: RS ITEM NO 225-981 APEM ITEM NO MGWD24A LED/Multiled LED Optimum voltage V 24Vac/dc Intensity Mounting Size Midget Groove Rectifier - Reverse Voltage Mounting Finish - AC current - Protection - DC current 15mA Mount Holder Midget Groove Voltage Tolerance(%)

Contextual Info: RS ITEM NO 203-587 APEM ITEM NO MGW12A LED/Multiled LED Optimum voltage V 12Vac/dc Intensity 1400mcd Mounting Size T1 3/4 Rectifier Half Wave Reverse voltage 80V(max) Mounting Finish Midget Groove AC current - Protection - DC current 7mA-17mA(max) Mount Holder

Contextual Info: RS ITEM NO 203-616 APEM ITEM NO MGW24A LED/Multiled LED Optimum voltage V 24Vac/dc Intensity 1400mcd Mounting Size T1 3/4 Rectifier Half Wave Reverse Voltage 80V(max) Mounting Finish Midget Groove AC current - Protection - DC current 7mA-18mA(max) Mount Holder

transistor d 1557

Abstract: MGW12N120
Contextual Info: MOTOROLA Order this document by MGW12N120/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW12N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

Contextual Info: MOTOROLA Order this document by MGW14N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G W 14N 60ED In sulate d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT Is co-packaged

21N60

Abstract: 21N60ED mgw diode 21n60e transistor data cd 100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGW 21N60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery ultra-fast rectifier and uses an advanced

transistor IC 1557 b

Abstract: MGW20N60D 1557 b transistor 305 Power Mosfet MOTOROLA
Contextual Info: MOTOROLA Order this document by MGW20N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW20N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247

tme 126

Abstract: MGW12N120 IC9012 Bipolar WPC
Contextual Info: MOTOROLA SEMICONDUCTOR = TECHNICAL DATA Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate MGW12N120 This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability.

Transistor motorola 418

Abstract: 305 Power Mosfet MOTOROLA MGW30N60
Contextual Info: MOTOROLA Order this document by MGW30N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW30N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

MGW40N60U

Abstract: TO247AE
Contextual Info: MOTOROLA SEMICONDUCTOR o TECHNICAL Order this document by MGW40N60UID DATA F Product Preview Data Sheet insulated Gate Bipolar mansistor N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

tme 126

Abstract: transistor TT 2442 MGW12N120D 3EML
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGW12N120D/D DATA e Product Preview Data Sheet Insulated Gate BipoMar Transistor with Anti-Parallel Diode N-Channel Enhancement Mode Silicon Gate Ttis Insulated Gate Bipolar Transistor lGB~ is cqackaged

21N60

Contextual Info: MOTOROLA Order this document by MGW21N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 21N60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ipolar T ra n sisto r IG BT is c o -p a c k a g e d

motorola 039 31

Abstract: MGW21N60ED
Contextual Info: MOTOROLA Order this document by MGW21N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor MGW21N60ED N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced

MGW12N120D

Contextual Info: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247

Contextual Info: MGWI06 SERIES DC/DC CONVERTER 6W, DIP Package FEATURES ►Ultra compact DIP Package 21.6 x 20.3 x 10.2 mm 0.85 x 0.80 x 0.40 inches ►Ultra wide 4:1 Input Range ►Fully regulated Output ►Operating Temp. Range –40°C to +85°C ►Over Load Protection

mgw26

Contextual Info: Cluster LED Lamps Part Number Shape Emitting Color Emitting Material Lens-Color Wave Length nm IF Luminous Intensity (mcd) Min. Max. Viewing Angle Figure No. 28x28mm K4M R2UB 12 MGW-26 Red GaAIAs Water Clear 660 20mA 800 - 2400 40” Blue GaN Water Clear

12n120

Abstract: TO247AE
Contextual Info: MOTOROLA Order this document by MGW12N 120/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet Insulated G ate Bipolar TVansistor MGW 12N120 N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage

TO247AE

Abstract: to-247AE MOTOROLA TRANSISTOR 726 MGW40N60U ADC 0803
Contextual Info: MOTOROLA Order this document by MGW40N60U/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGW40N60U Insulated Gate Bipolar Transistor N–Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

Contextual Info: RS ITEM NO 225-997 APEM ITEM NO MGWD12A LED/Multiled LED Optimum voltage V 12Vac/dc Intensity Mounting Size Midget Groove Rectifier - Reverse Voltage Mounting Finish - AC current - Protection - DC current 15mA Mount Holder Midget Groove Voltage Tolerance(%)

Contextual Info: RS ITEM NO 225-975 APEM ITEM NO MGWD28A LED/Multiled LED Optimum voltage V 28Vac/dc Intensity Mounting Size Midget Groove Rectifier - Reverse Voltage Mounting Finish - AC current - Protection - DC current 15mA Mount Holder Midget Groove Voltage Tolerance(%)

MGW12N120D

Contextual Info: MOTOROLA Order this document by MGW12N120D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGW12N120D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247

MGW21N60ED

Contextual Info: MOTOROLA Order this document by MGW21N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW21N60ED Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced