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    21N60E Search Results

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    21N60E Price and Stock

    Vishay Intertechnologies

    Vishay Intertechnologies SIHA21N60EF-GE3

    - Tape and Reel (Alt: SIHA21N60EF-GE3)
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    Avnet Americas SIHA21N60EF-GE3 Tape & Reel 35 Weeks 1,000
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    Newark SIHA21N60EF-GE3 Bulk 1
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    TTI SIHA21N60EF-GE3 Reel 1,000
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    Vishay Intertechnologies SIHP21N60EF-GE3

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    Avnet Americas SIHP21N60EF-GE3 Tape & Reel 35 Weeks 1,000
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    TTI SIHP21N60EF-GE3 Tube 1,000
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    TME SIHP21N60EF-GE3 1
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    EBV Elektronik SIHP21N60EF-GE3 42 Weeks 50
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    Vishay Intertechnologies SIHP21N60EF-BE3

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    Avnet Americas SIHP21N60EF-BE3 Tape & Reel 40 Weeks 1,000
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    EBV Elektronik SIHP21N60EF-BE3 51 Weeks 50
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    Vishay Intertechnologies SIHB21N60EF-GE3

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    Avnet Americas SIHB21N60EF-GE3 Tape & Reel 35 Weeks 1,000
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    TTI SIHB21N60EF-GE3 Tube 2,000 1,000
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    Bristol Electronics SIHB21N60EF-GE3 2,000 1
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    TME SIHB21N60EF-GE3 1
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    EBV Elektronik SIHB21N60EF-GE3 42 Weeks 50
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    Vishay Intertechnologies SIHG21N60EF-GE3

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    Avnet Americas SIHG21N60EF-GE3 Bulk 35 Weeks 500
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    TTI SIHG21N60EF-GE3 Tube 500
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    TME SIHG21N60EF-GE3 1
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    21N60E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    21N60

    Abstract: 21N60ED mgw diode 21n60e transistor data cd 100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGW 21N60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery ultra-fast rectifier and uses an advanced


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    mgw21n60ed21n6021n60edmgw diode+221n60etransistor data cd 100 PDF

    21N60

    Contextual Info: MOTOROLA Order this document by 21N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 21N60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ipolar T ra n sisto r IG BT is c o -p a c k a g e d


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    mgw21n60ed/d21n60 PDF

    Contextual Info: MOTOROLA Order this document by 21N60ED/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet M GW 21N60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT Is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced


    OCR Scan
    mgw21n60ed/d21n60ed PDF