MGFC40V7177 Search Results

Contextual Info: < C band internally matched power GaAs FET > MGFC40V7177 7.1 – 7.7 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177 7.1—7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M GFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7 .1 —7.7 GHz band amplifiers. The hermetically sealed metal-ceramic

GaAs FET

Abstract: MGFC40V7177
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177 7.1 ~ 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177 7 .1 —7.7G Hz BAND 1 0W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 1 7 7 is an in te rn a lly im pedance-m atched G aA s po w er F E T especially designed fo r use in 7 .1 - 7 . 7 G H z band a m p lifie rs . T h e h e rm e tic a lly sealed m etal-ceram ic

Contextual Info: < C band internally matched power GaAs FET > MGFC40V7177 7.1 – 7.7 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFC40V7177A

Abstract: pir 5 S28C
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177A PREUM'Ni ì ? y I * . 1 “ “ Nol««' ' 1,e»'>c'"fl,ts to cV»ân9 3 -" s°mep 7 .1 — 7 .7 G H z BAND ÎO W INTERNA LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 1 7 7 A isan internally im p e d a n c e -m a tc h e d

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> p b ê u m w a MGFC40V7177A *? , 7.1~7.7GHi BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 17 7 A is an internally im pedance-m atched GaAs power FET especially designed fo r use in 7.1 — 7 ,7 GHz band amplifiers. The herm etically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177B so" pa „m C U '1-' . 7 .1 — 7 .7 G H z BAND ÎO W INTERNA LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 1 7 7 B is a n in te rn a lly im p e d a n c e -m a t c h e d G aA s p o w e r F E T especially designed fo r use in 7 . 1 — 7 . 7

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC40V7177B! .' , Unat MW • St'« I 7.1~7.7GH* BAND lO W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 1 7 7 B is a n in te rn a lly im p e d a n c e -m a tc h e d GaA s p o w e r F E T especially designed fo r use in 7 . 1 — 7 . 7

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

mgfc30

Abstract: MGFC39V5964A
Contextual Info: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed