MGFC40V Search Results

MGFC40V Datasheets (21)

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Mitsubishi

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MGFC40V3642	Mitsubishi	3.6~4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF	91.31KB	2
MGFC40V3742	Mitsubishi	3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET	Original	PDF	209.13KB	2
MGFC40V3742	Mitsubishi		Original	PDF	102.14KB	2
MGFC40V3742A	Mitsubishi	3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF	96.82KB	2
MGFC40V4450	Mitsubishi	4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET	Original	PDF	192.94KB	2
MGFC40V4450	Mitsubishi		Original	PDF	105.05KB	2
MGFC40V4450A	Mitsubishi	4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF	96.13KB	2
MGFC40V5258	Mitsubishi	5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET	Original	PDF	210.1KB	2
MGFC40V5258	Mitsubishi	5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF	81.28KB	2
MGFC40V5964	Mitsubishi	5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET	Original	PDF	208.99KB	2
MGFC40V5964	Mitsubishi		Original	PDF	110.03KB	2
MGFC40V5964A	Mitsubishi	5.9-6.4 GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF	96.02KB	2
MGFC40V6472	Mitsubishi	6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET	Original	PDF	191.03KB	2
MGFC40V6472	Mitsubishi	6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF	84.43KB	2

MGFC40V6472A	Mitsubishi	6.4-7.2 GHz BAND 10W Internally Matched GaAs FET	Scan	PDF	99.09KB	2
MGFC40V7177	Mitsubishi	7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF	82.46KB	2
MGFC40V7177A	Mitsubishi	7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF	96.71KB	2
MGFC40V7177B	Mitsubishi	7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF	96.96KB	2
MGFC40V7785	Mitsubishi	7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF	84.77KB	2
MGFC40V7785A	Mitsubishi	7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET	Scan	PDF	98.47KB	2

MGFC40V Price and Stock

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Mitsubishi Electric


Mitsubishi Electric MGFC40V7177 FET, ID 6 A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MGFC40V7177		2			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mitsubishi Electric MGFC40V4450-61 C BAND, GAAS, N-CHANNEL, RF POWER, JFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MGFC40V4450-61		7			1 $58.50 10 $58.50 100 $58.50 1000 $58.50 10000 $58.50	Buy Now
Mitsubishi Electric MGFC40V5964-61 C BAND, GAAS, N-CHANNEL, RF POWER, JFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MGFC40V5964-61		4			1 $62.40 10 $62.40 100 $62.40 1000 $62.40 10000 $62.40	Buy Now

MGFC40V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MGFC40V6472 Abstract: pir 428 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V6472 6 . 4 — 7.2G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAW ING The M G F C 4 0 V 6 4 7 2 is an internally impedance-matched GaAs power F E T especially designed fo r use in 6 . 4 - 7 . 2	OCR Scan	mgfc40v6472 ltem-01 ltem-511 pir 428	PDF
MGFC40V3742 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2	Original	mgfc40v3742 29dbm 10mhz june/2004	PDF
MGFC40V3742 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2	Original	mgfc40v3742 29dbm 10mhz	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC40V5258 5.2 - 5.8 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc40v5258	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC40V7177 7.1 – 7.7 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc40v7177 50ohm	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40VS2S8 5 .2 ~ 5 .8 G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 5 2 5 8 is an internally impedance-matched GaAs power FET especially designed for use in 5 . 2 - 5 . 8 GHz band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	mgfc40vs2s8	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V6472 6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC40V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc40v6472 mgfc40v6472a item-51 10mhz	PDF
5.8 ghz amplifier 10w Abstract: Gaas Power Amplifier 10W Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8	Original	mgfc40v5258 25deg june/2004 5.8 ghz amplifier 10w +1gaas power amplifier 10w	PDF
5.8 ghz amplifier 10w Abstract: MGFC40V5258 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8	Original	mgfc40v5258 june/2004 5.8 ghz amplifier 10w	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177 7.1—7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M GFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7 .1 —7.7 GHz band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	mgfc40v7177 gfc40v7177 27c102p rv-15 +116-bit	PDF
5.8GHz Abstract: 5.8 ghz amplifier 10w MGFC40V5258 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8	Original	mgfc40v5258 25deg 5.8ghz 5.8 ghz amplifier 10w	PDF
GaAs FET Abstract: MGFC40V7177 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177 7.1 ~ 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004	Original	mgfc40v7177 june/2004 gaas fet	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177 7 .1 —7.7G Hz BAND 1 0W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 1 7 7 is an in te rn a lly im pedance-m atched G aA s po w er F E T especially designed fo r use in 7 .1 - 7 . 7 G H z band a m p lifie rs . T h e h e rm e tic a lly sealed m etal-ceram ic	OCR Scan	mgfc40v7177	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC40V6472 6.4 – 7.2 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc40v6472 50ohm	PDF

Contextual Info: < C band internally matched power GaAs FET > MGFC40V7177 7.1 – 7.7 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc40v7177 -45dbc 29dbm	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC40V3742 3.7 – 4.2 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc40v3742 -45dbc 29dbm	PDF
Contextual Info: < C band internally matched power GaAs FET > MGFC40V5964 5.9 – 6.4 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc40v5964 -49dbc 29dbm	PDF
gf-18 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	mgfc40v3742 29dbm 10mhz june/2004 +1gf-18	PDF
MGFC40V7177A Abstract: pir 5 S28C Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177A PREUM'Ni ì ? y I * . 1 “ “ Nol««' ' 1,e»'>c'"fl,ts to cV»ân9 3 -" s°mep 7 .1 — 7 .7 G H z BAND ÎO W INTERNA LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 1 7 7 A isan internally im p e d a n c e -m a tc h e d	OCR Scan	mgfc40v mgfc40v7177aisan mgfc40v7177a pir 5 +1s28c	PDF
MGFC40V6472A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> c 6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC40V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	mgfc40v6472a item-51 10mhz	PDF
MGFC40V4450 Abstract: Gaas Power Amplifier 10W Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V4450 4.4 ~ 5.0GHz BAND 10 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0	Original	mgfc40v4450 29dbm 10mhz gaas power amplifier 10w	PDF
MGFC40V3742 Abstract: MGFC40V5964 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5964 5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4	Original	mgfc40v5964 mgfc40v3742 29dbm 10mhz +1june/2004	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> p b ê u m w a MGFC40V7177A *? , 7.1~7.7GHi BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 17 7 A is an internally im pedance-m atched GaAs power FET especially designed fo r use in 7.1 — 7 ,7 GHz band amplifiers. The herm etically sealed metal-ceramic	OCR Scan	mgfc40v7177a	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5964 5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	mgfc40v5964 mgfc40v3742 29dbm 10mhz +1june/2004	PDF

MGFC40V Search Results

MGFC40V Datasheets (21)

MGFC40V Price and Stock

Mitsubishi Electric MGFC40V7177

Mitsubishi Electric MGFC40V4450-61

Mitsubishi Electric MGFC40V5964-61

MGFC40V Datasheets Context Search

MGFC40V6472

MGFC40V3742

MGFC40V3742

5.8 ghz amplifier 10w

5.8 ghz amplifier 10w

5.8GHz

GaAs FET

gf-18

MGFC40V7177A

MGFC40V6472A

MGFC40V4450

MGFC40V3742