GFC40V7177 Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> GFC40V7177 7.1—7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M GFC40V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7 .1 —7.7 GHz band amplifiers. The hermetically sealed metal-ceramic

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Abstract: MGFC40V7177 MGFC40V7177B
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC40V7177B s<^pa,a' 7 .1 — 7 .7 G H z BAND 1 0 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 1 7 7 B is an in te rna lly im p e d a n ce -m a tch e d GaAs power F E T especially designed fo r use in 7 .1 — 7 .7

MGFC40V7177

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC40V7177 7 .1 ~ 7 .7 G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N T h e M G F C 4 0 V 7 1 7 7 is an in te rn a lly O U T L IN E D R A W IN G im p ed an ce-m atch e d G aA s p o w e r F E T especially designed fo r use in 7 . 1 — 7 . 7

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC40V7177A p r EUN"nARV s"nwp# 7 .1 — 7.7G H z BAND lO W IN TERN A LLY MATCHED GaAs F E T DESCRIPTION The M G F C 4 0 V 7 17 7 A isa n in te rna lly im p e d a n ce -m a tch e d GaAs power FET especially designed f o r use in 7 .1 — 7 .7