FC40V7177A Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC40V7177A p r EUN"nARV s"nwp# 7 .1 — 7.7G H z BAND lO W IN TERN A LLY MATCHED GaAs F E T DESCRIPTION The M G F C 4 0 V 7 17 7 A isa n in te rna lly im p e d a n ce -m a tch e d GaAs power FET especially designed f o r use in 7 .1 — 7 .7

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC40V7177A • ,n 7 .1 — 7 .7 G H z B A N D lO W IN T E R N A LLY M ATC HED GaAs FET DESCRIPTION The M G FC 40V 7177A is an internally im pedance-matched GaAs power FET especially designed fo r use in 7.1 — 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFC40V7177A

Abstract: pir 5 S28C
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FC40V7177A PREUM'Ni ì ? y I * . 1 “ “ Nol««' ' 1,e»'>c'"fl,ts to cV»ân9 3 -" s°mep 7 .1 — 7 .7 G H z BAND ÎO W INTERNA LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 1 7 7 A isan internally im p e d a n c e -m a tc h e d