MESFET FET Search Results

3906 PNP TRANSISTOR

Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
Contextual Info: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET

MGF1951A

Abstract: MGF1951A-01 MGF1951
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1951 MGF1951A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1951A is a 20mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES

transistor NEC D 882 p

Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor transistor NEC D 587 IMT-2000 NES1823P-100 615t 2C156
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear

k MESFET S parameter

Abstract: MGF1953A MGF1953A-01 mesfet fet
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1953A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1953A is a 100mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power

k MESFET S parameter

Abstract: MGF1952A-01 MGF1952A
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1952A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1952A is a 50mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power

MGF1954A-01

Abstract: k MESFET S parameter MGF1954A
Contextual Info: MITSUBISHI SEMICONDUTOR <GaAs FET> MGF1954A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1954A is a 200mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its lead-less ceramic package assures minimum parasitics. FEATURES • High Gain and High Output Power

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It

HP07

Abstract: SAS 250
Contextual Info: HP07 0.7µ µm High Power Process Power MESFET technology Description - MESFET technology - 0.7µm gate length - Implanted active layer - 3" wafer - Spiral inductors, MIM capacitors, TaN resistors, GaAs resistors - Via-holes Main Features þ Transition frequency: 15 GHz

NE6500379A

Abstract: NE6500379A-T1
Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high

Contextual Info: DATA SHEET_ N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high

Ablebond 36-2

Abstract: Multicore Solders
Contextual Info: MTLS LTD ^ T - 3 /- A 5 " Three Five Product Information GaAs MESFET P35-1105 This New Generation MESFET has been designed for improved performance and is ideally suited for: Applications • Low noise amplifiers 12GHz • Tube drive amplifiers • Low noise oscillators

C-Band Power GaAs FET HEMT Chips

Abstract: CMC 707 7 transistor solid state x-band s-parameter transistor RF TRANSISTOR 1.5 GHZ dual gate microwave fet IC MMIC X-band amplifier HEMT MMIC POWER AMPLIFIER Three MMIC Solution for an X-band RF Front End multilayer lithography ic fabrication GaAs FET HEMT Chips
Contextual Info: KU-BAND MMIC POWER AMPLIFIERS DEVELOPED USING MSAG MESFET TECHNOLOGY T his article presents the design approach and test results of 1, 1.5, 2 and 5 W, Kuband MMIC power amplifiers developed using the high performance MSAG MESFET technology. Both single-ended and

nec 0882

Abstract: NEC 1601 fet nec 0882 p
Contextual Info: DATA SHEET_ N-CHANNEL GaAs MES FET NES1821P-50 50 W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-50 is a 50 W. push-pull type GaAs MESFET designed forhigh power transmitter applications for PCS, DCS and PHS base station systems. It Is capable of delivering 50 watts of output power CW with high linear

GaAs MESFET

Abstract: NES2527B-30 MESFET NE6500278 NEL2000 NES1821B-50 NEZ1011 NEZ1414 NEZ5964
Contextual Info: Power NEW! NES2527B-30 GaAs MESFET • 30 Watts POUT, 13.0 dB Gain • 2.1–2.7GHz Wideband Operation PCS and Cellular Base Station NEW! NES1821B-50 GaAs MESFET Wireless Local Loop and Wireless Cable MMDS • 47.0 dBm POUT @ 1.9GHz • 11.0 dB Linear Gain

D1010

Abstract: pspice model gate driver
Contextual Info: Production Process TQHiP Power MESFET Foundry Service Features Air Bridge - 4um • • Metal 1 Metal 1 – 2 um NiCr MIM Metal Metal 0 N+ N+ Isolation Implant N-/P- Channel D MESFET MIM Capacitor • • • • NiCr Resistor Semi-Insulating GaAs Substrate

TQTRX

Abstract: TQ5M31 TQ3M31 79GHz 121GHz mesfet
Contextual Info: Production Process TQTRx GaAs MESFET Foundry Service Features Metal 2 - 4um Metal 2 • Dielectric Metal 1 • Dielectric Metal 1 - 2um Metal 1 • Dielectric NiCr MIM Metal Metal 0 N+ N+ Isolation Implant N-/P- Channel E,D,G MESFET NiCr Resistor MIM Capacitor

Contextual Info: •'.ONI HTLS LTD ES 3?hûS01 DOOÜGTl S 16ML PLESSEY T-3>- A5" Three Five Product Information GaAs Dual Gate MESFET P 35-1310 The versatile dual gate MESFET has been designed for improved performance and is ideally suited for: Applications • Automatic gain control

nec k 813

Abstract: NES1821P-30
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It is capable of delivering 30 watts of output power CW with high linear

2N3904

Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM
Contextual Info: 19-3985; Rev 0; 2/06 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

4.1 amplifier circuit diagram

Abstract: class A push pull power amplifier AC 5018 class B push pull power amplifier mesfet datasheet by motorola pn junction diode ideality factor alarm clock sweep function ic dxp 15 philips ic clock alarm 28 pins STANDARD PIN DETAILS OF 2N3904 NPN TRANSISTOR
Contextual Info: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

2N3904

Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM
Contextual Info: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

Contextual Info: 19-3985; Rev 0; 2/06 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

2N3904

Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM 55236 mesfet
Contextual Info: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

62095

Contextual Info: DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are.power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal'input and output matching enables guaranteed performance to be achieved with