MD600 Search Results

MD6003

Abstract: MD6003F MD6001
Contextual Info: MOTORCLA SC XSTRS/R F 15E 0 I b3b7254 0G0bSS3 S | r-Ä 7 -Ä 7 M AXIM U M RATINGS MD6001.F MD6003 MD6002,F Sym bol MD6003F M06001,2 Rating Unit Vdc Collector-Emitter Voltage VcEO Collector-Base Voltage VCBO Emitter-Base Voltage V e BO 5.0 Vdc lc 500 mAdc Collector Current — Continuous

HS-6600

Contextual Info: MDC600 MDA600 MDK600 MD600 Diode Modules Features： n Isolated mounting base 2500V~ Pressure contact technology with Increased power cycling capability n Space and weight savings Typical Applications n AC/DC Motor drives n Various rectifiers n DC supply for PWM inverter

Monolithic Transistor Pair

Abstract: MD6002
Contextual Info: MD6002 Complementary Monolithic Transistor Pair 67.00 Transistors Multiple Transisto. Page 1 of 1 Enter Your Part # Home Part Number: MD6002 Online Store MD6002 Diodes Complementary Monolithic Transistor Pair Transistors Integrated Circuits Optoelectronics

Contextual Info: MO TO RO LA SC X ST RS /R F 4bE B L.3b?2S4 Q D R S b l ? 2 « n O T b 7^5^5 MOTOROLA SEMICONDUCTOR! TECHNICAL DATA DM0 PRELIMINARY DATA mini MD6002FHXV/HS (DUAL) MQ6002HXV/HS (QUAD) Discrete Military Operation PROCESSED TO MIL-S-19500/XXX SURFACE MOUNTABLE

dip 28

Abstract: "lead material" DIP
Contextual Info: TUBE CONTAINER UNIT : mm 8.6 15.5 18.3 11.2 MD600-1A 22.4 MD600-2A Length : 501±2.0 +0.3 Thickness : 0.7−0.2 Tolerance : ±0.4 Material : Plastic With Antistatic Finish Applied Package Quantity(pcs) 24-Pin Plastic DIP MAX. 14 28-Pin Plastic DIP MAX. 12

p42c

Abstract: SC-551-42 h 033 0007R P42C-70-600B-1
Contextual Info: Packing Name Magazine MD600-1A MD600-2A 42 pin Shrink DIP 600 mil 42 22 1 21 A K I L J F D C N R M M H B G NOTES 1) Each lead centerline is located within 0.17 mm (0.007 inch) of its true position (T.P.) at maximum material condition. 2) Item "K" to center of leads when formed parallel.

h 033

Abstract: SC-552-48
Contextual Info: Packing Magazine Name MD600-1A MD600-2A 48 pin Shrink DIP 600 mil 48 25 1 24 A K L I J H G F D C N M NOTES 1) Each lead centerline is located within 0.17 mm (0.007 inch) of its true position (T.P.) at maximum material condition. 2) ltem "K" to center of leads when formed parallel.

MD6002

Abstract: MD6003 MD6001 MD6001F MD6003F MQ6001 MQ6002 LB-216 VRP11
Contextual Info: MD6001, F silicon MD6002, F MD6003, F MQ6001, MQ6002 M U L T IP L E SI LIC O N A N N U L A R T R A N S IS T O R S NPN, PNP SIL IC O N M U L T IP L E T R A N S IS T O R S . . designed for use as differential amplifiers, dual general*purpose switches and amplifiers, front end detectors, and temperature

91010-01TX

Abstract: MHQ6002HX MD6002 MHQ6002
Contextual Info: 4bE J> • b3b7254 GQISfiTB 4 ■ MOTb“F ’^ v £ ? MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA DM0 MD6002HX, HXV (DUAL) MD6002FHXV (DUAL) *MHQ6002HX, HXV (QUAD) MQ6002HXV (QUAD) Dual/Quad NPN/PNP Complementary Pairs Small-Signal Transistors

MHQ6002HX

Abstract: MHQ6002 MD6002 610A-04 MD6002F MD6002FHXV MD6002HX MQ6002 MQ6002HXV
Contextual Info: MD6002HX, HXV DUAL MD6002FHXV (DUAL) MHQ6002HX, HXV (QUAD) MQ6002HXV (QUAD) CRYSTALONCS 2805 Veterans Highway Suite *4 Rnokonkoma, N.Y. 11779 Dual/Quad NPN/PNP Complementary Pairs Small-Signal Transistors . . designed for general-purpose amplifier and switching applications.

P42C-100-600A

Contextual Info: Packing Name SC-600-1P Magazine MD600-1A MD600-2A 42 pin DIP 600 mil 42 22 1 21 A K L I J H M G D R C F N M NOTES 1) Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition. 2) ltem "K" to center of leads when formed parallel.

Contextual Info: Packing Name SC-600-1P Magazine MD600-1A MD600-2A 24 pin DIP 600 mil 24 13 1 12 A K I L J H F C G D N M B NOTES 1) Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition. 2) Item "K" to center of leads when formed parallel.

MHQ6002HX

Abstract: MQ6002 MD6002
Contextual Info: MD6002HX, HXV DUAL MD6002FHXV (DUAL) MHQ6002HX, HXV (QUAD) MQ6002HXV (QUAD) CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 Dual/Quad NPN/PNP Complementary Pairs Small-Signal Transistors . . .designed for general-purpose amplifier and switching applications.

Contextual Info: MD600xRW Series 2:1 Input, 6W SIP, Single & Dual Output DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Key Features:

MD8003

Abstract: 2N2453 2N2916 2N3726 MD7003A MD6001 MD6001F MD6002 MD6002F MD6003
Contextual Info: MULTIPLE SMALL-SIGNAL TRANSISTORS continued Dual Transistors (continued) ID ? 2 2 Subscript Ref. Point hFE1 MD6001 MD6001F MD6002 MD6002F CG CG CG CG .575 0.35 .575 0.35 A A A A 30 30 30 30 MD6003 MD6003F MD6100 MD6100F MD7000 MD7001 CA CA CA CA NA PA .575 A

Contextual Info: Packing Magazine Name MD600-1A MD600-2A 28 pin DIP 600 mil 28 15 1 14 A K I L J H F C G D N R M M B NOTES 1) Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition. 2) Item "K" to center of leads when formed parallel.

Contextual Info: Packing Name SC-600-1P Magazine MD600-1A MD600-2A 48 pin DIP 600 mil 48 25 1 24 A K L I J H G F D C N M NOTES 1) Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition. 2) ltem "K" to center of leads when formed parallel.

MNT6337J

Abstract: SML1258 SML-1258 MJ15003 MJ15004 MNT6337H SM1307 NPN/SML1258 mnt6337 HP5082 MHQ2222
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No Description HP5082-2800DCSM BCW29CSM MD2905 MD3725 MD5000 MD6003 MD7001 MHQ2222 MHQ2222A MHQ2907 MHQ6002 MJ11013 MJ11014 MJ11028 MJ11029 MJ11030 MJ11031 MJ11032 MJ11033 MJ14000 MJ14001 MJ14002

complementary npn-pnp

Abstract: MD6003
Contextual Info: MD6003 MECHANICAL DATA Dimensions in mm inches 8.51 (0.335) 9.40 (0.370) COMPLEMENTARY DUAL GENERAL PURPOSE TRANSISTOR NPN / PNP SILICON 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08

Contextual Info: MD600xRWI Series High Isolation, 6W SIP, Single & Dual Output DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice.

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

21x21

Abstract: MM554 tray bga 45x45 bga X13769XJ2V0CD00 CPGA132 LA010 P14DH-100-300A2-1
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