MCMASTER Search Results

CY8C28000-24PVXI

Abstract: QFN48 108X108
Contextual Info: 15.88mm [0.625"] 24.77mm [0.975"] 286XXQ rev * 27.57mm [1.085"] McMaster/Carr 91185A558 CY3250-286XXQFN Description: POD 56 pin SSOP OCD with Hirose cable connector P/N: DF12-5.0-20DP-0.5V-81 with retension mechanism included. Compatible with: SF-QFN48A-L-02B, QFN foot, 48 pin, 0.5mm pitch, 5mm body

91185A558

Abstract: SF-QFN24C-A-02B QFN24 CY3250-20334QFN BOX21151
Contextual Info: 15.88mm [0.625"] 24.77mm [0.975"] 6015 20X34Q Rev * 27.57mm [1.085"] Top View Bottom View McMaster/Carr 91185A558 CY3250-20334QFN 18.35mm [0.722"] Description: POD 48 pin QFN OCD with Hirose cable connector P/N: DF12-5.0-20DP-0.5V-81 with retension mechanism included.

McMaster-Carr

Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
Contextual Info: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

Contextual Info: PROPOSED RFPA2016 RFPA2016 3-Stage Power Amplifier, 1W 700MHz to 2700MHz GND 26 25 24 23 DET_IN RFOUT3/Vcc3 27 GND GND 28 RFOUT3/Vcc3 GND The RFPA2016 is a 3-stage HBT power amplifier module with high gain and excellent efficiency. External matching and bias

Contextual Info: 6 7 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R - B Y TYCO E LE C TR O N IC S 4 2 3 P U B L IC A T IO N LOC A L L INTERNATIO NAL RIGHTS C O P Y R IG H T 5 RESERVED. AD C O R P O R A TIO N . REVISIONS D IS T 00 LTR 02 2.00 0.97 MATERIAL: CONTACT MATERIAL:

mabuchi rs-555ph-3255

Abstract: BI802-001A MDL-BDC RS-555PH-3255 MABUCHI RS-540SH Mabuchi
Contextual Info: Stellaris Brushed DC Motor Control Reference Design Kit User ’s Manual RDK-BDC-05 Co pyrigh t 2 008– 201 0 Te xas In strumen ts Copyright Copyright © 2008–2010 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments.

Contextual Info: r 7 8 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AJ R E V IS IO N S DIST 16 LTR DESCRIPTION RELEASED PER EC 0 S 1 4 - Q 1 6 1 - 0 5 DATE DWN APVD 09M AY05 BM JL 1\ P O L Y E S T E R , PBT, BLACK, P E R M I L - M - 2 4 5 1 9 .

marking code R56 SMD Transistor

Abstract: smd transistor p5s marking code R52 SMD Transistor
Contextual Info: User's Guide SLUU335A – December 2008 – Revised January 2010 bq78PL114 8S EVM The PowerLAN 8S Evaluation Module EVM is a complete evaluation system for the bq78PL114 Battery Management Controller and bq76PL102 Dual-Cell Li-Ion Battery Monitor integrated circuits

Contextual Info: User's Guide SLAU479 – December 2012 DRV595 EVM This user’s guide provides an overview of the Texas Instruments TI DRV595, high-efficiency PWM power driver evaluation module. It includes a list of EVM features, a brief illustrated description of the module, a

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - , - LOG GP ALL RIGHTS RESERVED. DI5T REVISIONS 00 LTR 4 .0 6 — [. 1 6 0 ] TYP D A KEY /6 \ S E E LETTER TABLE DATE DESCRIPTION RELEASED PER EC 0 S 1 3 - 0 0 8 4 - 0 4

SPMU365A

Abstract: TM4C123GH6PM
Contextual Info: Tiva C Series TM4C1294 Connected LaunchPad Evaluation Kit EK-TM4C1294XL User's Guide Literature Number: SPMU365A March 2014 – Revised March 2014 Contents 1 Board Overview . 4

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AD REVISIONS DIST 00 LTR DESCRIPTION DATE REVISED PER EC 0S12-0213-05 0.97 +0.03 -0.00 2.00 -P- rz • njn-Lgj m j r=n Lgj p rm rm rm rm rm rm rm rm nsn q p

ELXY

Abstract: NPT1010 npt1010b 18121C105KAT2A ATC100B101J 6010LM 91292A012 ATC100B150J 12061C103KAT2A NITRON
Contextual Info: NPT1010 Preliminary Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz

Contextual Info: RFCA3828 RFCA3828 75Ω High Linearity pHEMT MMIC Amplifier Package: SOT-89 The RFCA3828 is a high performance pHEMT MMIC amplifier designed to run from a single 5V or 6V supply, without the need for an external dropping resistor. The high gain, high linearity, and

MCR03EZHJ

Abstract: capacitor 47pf/50v rk73h1j1002f IRF9910PBF McMaster-Carr 0603X 10uF/16v CAPACITOR 0603 capacitor 47pf/50v 0603 NPO C1608X7R1H104K C3216X5R0J106M
Contextual Info: IRPP3624-05A POWIR+ Chipset Reference Design #0611 5Amp Single Phase Synchronous Buck POWIR+TM Chipset Reference Design using IR3624MPBF PWM & Driver IC and IRF9910PBF Dual SO-8 MOSFET By Steve Oknaian, Senior Applications Engineer www.irf.com RD#0611 1 Table of Contents

SN146-1R0

Abstract: capacitor 1000uF 16V SN146 IRF FET McMaster-Carr schematic diagram PWM 12V 30a 1000uf, 6.3v electrolytic capacitor 18a sot23 1000uf, 16v electrolytic capacitor capacitor 1000uF/16V
Contextual Info: IRPP3637-18A POWIR+ Chipset Reference Design 18Amp Single Phase Synchronous Buck POWIR+TM Chipset Reference Design using IR3637SPBF PWM & Driver IC and IRLR8713PBF & IRLR7843PBF D-Pak MOSFETs By Steve Oknaian, Senior Applications Engineer Table of Contents

DS110505

Abstract: RFPA3800 SCHEMATIC circuit high frequency POWER SUPPLY ind output 7.5v DC Power Jack Application of tuned amplifier gsm transceiver power amplifier circuit diagram schematic diagram of bluetooth s9 RFMD PA LTE 920MHz
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=4dB at 945MHz  5V to 7V Operation

E62806

Abstract: EPBAD74 185mm2
Contextual Info: Product Data Sheet EPBAD74 Enclosed Distribution Power Block 335 Amps, 600V UL/CSA 800V AC/DC CE IEC 60947-7-1 Wire Range: Line side: (1) 400kcmil - #6 AWG (185 mm² – 16 mm²) and (1) 3/0 - #14 (95 mm² – 2.5 mm²) Load Side: (8) #2 - #16 AWG (35 mm² – 2.5 mm²)

RFPA3806TR7

Abstract: trace code marking RFMD EEF-10
Contextual Info: RFPA3806 RFPA3806 GaAs HBT 2STAGE POWER AMPLIFIER GaAs HBT 2-STAGE POWER AMPLIFIER 700MHZ TO 2700 MHZ NC 5 NC 6 700MHz to 2700MHz Operation Applications      GaAs Driver for Base Station Amplifiers PA Stage for Commercial Wireless Infrastructure

EPBAD21

Abstract: 54875A46
Contextual Info: Product Data Sheet EPBAD21 Listed, Enclosed Power Splicer Block 115 Amps, 600 Volts AC/DC 1,000V AC/DC CE (IEC 60947-7-1) Wire Range: Line/Load side: (1) 2 - #14 AWG (35- 2.5mm²) Agency Approvals: • UL Listed, File No. QPQS.E309401, Investigated to UL 1953

Contextual Info: 4 TH IS DRAWING IS U N P U B L IS H E D . COPYRIGHT 3 RELEASED BY 1WCO ELECTRONICS CORPORATION. POR ALL 2 1 PUBLIC ATIO N RIGHTS LOC R E S ER V ED . REVISIONS D IS T GP 00 P LTR B 1. Z©N D E S C R IP TIO N R E V IS E D PER DATE 17APR08 ECO -08-007327 MATERIAL:

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 520422 6 5 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS DIST GP 00 LTR B2 DESCRIPTION DATE DWN 21 JU N 07 REVISED PER E C O -07- 006407 APVD JDP CWR PREFIX AND SUFFIX NUMBERS MUST MATCH THOSE ON PLUG ASSEMBLY

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . RELEASED FOR ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - LOC RESERVED . R E V IS IO N S D IS T 00 C O R P O R A T IO N . D E S C R IP T IO N REVISED £ SEE DWN

Contextual Info: 1 4 7 1 -9 3 /1 1 2 RE VIS IO NS GP 00 D E S C R IP T IO N REVISED RER E C O - 1 1 - 0 0 4 8 3 5 1. I MAR 11 RK H M R ALL PARTS PACKAGED UNASSEMBLED AS A UNIT KIT. D ZINC PLATED . 0 0 0 2 0 0 - , 0 0 0 4 0 0 THICK CLEAR CHROMATE COATING. C OPENING FOR CABLE