MCD224 Search Results

13006 TRANSISTOR

Abstract: transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D
Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 01 — 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken

j310 equivalent

Abstract: J310 J310 applications J309 Transistor J310 J308 MCD221
Contextual Info: Philips Semiconductors Product specification N-channel silicon field-effect transistors FEA TU R ES J308; J309; J310 P IN N IN G - T O -92 • Low noise PIN SYM BOL • Interchangeability of drain and source connections 1 g gate • High gain. 2 s source 3

PMBFJ620,115

Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken

pmbfj310

Contextual Info: 3 SO T2 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION

Contextual Info: bbsa'm Philips Sem iconductors 0024012 2T2 • a p x N-channel silicon field-effect transistors N AUER PHIL IPS /DISCR ETE Preliminary specification J308/309/310 b?E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections

J310

Abstract: J309 application note J308 J310 applications J309 MCD212 MCD221 VHF Transistors
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors

Contextual Info: 1,1.53^31 002405T 333 « A P X P hilips S em iconductors N-channel silicon field-effect transistors Prelim inary specification PM B FJ308/309/310 N AMER PHILIPS/DISCRETE □7E I "- PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and

MCD40-12

Abstract: MCD40 MCD16208IO MCD95-14IO8 MCD56-16 MCD72-16 06io1 MCD224-22IO1 mcd401 M11-P
Contextual Info: Thyristor / Diode Modules ¡ h t iif i lw = 27-250 A Type v RRM Tc V rms rT TSM □ p ^"vJM 45°C 10ms th,/C per Chip V A °C A A V m °C K/W MCD26-08io8B MCD26-12io8B MCD26-14io8B MCD26-16io8B 800 1200 1400 1600 27 85 50 520 0.85 11 125 0.88 MCD40-12ÌO6

PMBFJ620

Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken

J310

Abstract: J309 J310 Application Note Transistor J310 J308 j310 equivalent MCD217 MCD212 MCD221
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors

UCD224

Abstract: transistor 309 JCD222 PMBFJ308 PMBFJ309 PMBFJ310 MCD217 TIL 309
Contextual Info: GOEHOST Philips Sem iconductors E33 IAPX N-channel silicon field-effect transistors N a piE R Prelim inary specification PM B FJ308/309/310 P H IL IP S /D IS C R E T E b7E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections

MCD228

Abstract: PMBFJ310 MCD214 MCD221 PMBFJ309 marking BSs sot23 n-channel MCD217 PMBFJ308 MA1612 SOT-23 bdi
Contextual Info: Philips Semiconductors Product specification N-channel silicon field-effect transistors FEATURES PMBFJ308, F^BW309, PMBFJ310 PINNING - SOT23 • Low noise PIN SYMBOL • Interchangeability of drain and source connections 1 s source • High gain. 2 d drain

marking code 10 sot23

Abstract: MCD217 PMBFJ310 MCD221 PMBFJ308 PMBFJ309 PMBFJ310,2
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Sep 11 Philips Semiconductors Product specification

pmbfj310

Abstract: PMBFJ308 PMBFJ309 13403 PMBFJ310,2
Contextual Info: PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 03 — 23 July 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected